Semiconductor Epitaxy and Analysis Laboratory (SEAL)
Facilities and Equipment
MBE Process
Equipment
Vacuum Cluster 1
Vacuum Cluster #1 contains two GENII MBE chambers modified for 3” substrates along with an X-ray photoelectron spectroscopy (XPS) system.
-MBE1 - III-V compounds based on the AlGaInAsP materials.
-MBE2 (SiGe) – Includes direct current silicon sublimation source and standard germanium effusion cell.
-XPS: Al Kα monochromatic source with variable temperature stage (RT – 1000C).
MBE1 and MBE2 are interconnected to enable III-V/IV integration studies. Additionally, an in-line high resolution XPS chamber allows for in-situ chemical studies of pristine surfaces and interfaces.
Vacuum Cluster 2
Vacuum Cluster #2 contains a Veeco GEN930 system along with a Riber M7 MBE chamber. This vacuum system uses Veeco transfer and manipulator technology for both chambers.
-MBE3 - Plasma assisted MBE (PAMBE) for growth of III-V compounds based on AlGaInN materials.
- N2 plasma sources: System has both a Veeco and Riber plasma source.
-MBE4 – Plasma assisted MBE for wide bandgap oxides and spin materials.
- Spin metals include Fe and Pt.
MBE5
MBE5 is a GEN930 chamber with the goal of producing 2D based nanostructures using GaSe, GaTe and MoWSe2 based materials.
-In-Situ analysis includes RHEED and Raman Spectroscopy
AMBER
MBE6 is the newest addition to the lab and it is growing SbAs based materials. More information can be found here.
Equipment
-BEDE D1 High Resolution Triple Axis X-ray Diffraction System - Used for structural and compositional analysis.
-Hall Effect with variable field and temperature QMSA capability.
-Photoluminescence (PL) Spectroscopy with low temperature capability and 488nm Argon laser.
SEAL Welcomes an MBE Chamber for Two-Dimensional Material Exploration
SEAL is happy to announce the arrival of a new MBE chamber to the epitaxy facility. Professor Siddharth Rajan worked to acquire a Veeco Gen 930 MBE chamber, through an NSF grant, for the purposes of two-dimensional semiconductor (2D semiconductor) material exploration. While the main focus will be toward 2D growth of MoWSe2 based materials, discussions are underway to also investigate GaSe and GaTe along with other accompanying materials. Additionally, Professor Roberto Myers is developing anoptical Ramansetup for this system to provide real time in-situ analysis of the 2D materials growth. For questions or inquiries concerning this equipment you can contact SEAL lab manager, MarkBrenner (brenner.34@osu.edu).
