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Siddharth Rajan

  • Associate Professor, Electrical & Computer Engr.
  • Associate Professor, Materials Science Engineering
  • 205 Dreese Laboratories
    2015 Neil Ave
    Columbus, OH 43210
  • 614-247-7922

About

Education

Ph.D. 2006, University of California - Santa Barbara

Areas of interest

Nano-scale semiconductor devices, molecular beam epitaxy, and III-nitride semiconductors.

Office

209 Caldwell Laboratory

Lab

Electron Device Laboratory

Honors

  • 2012-2013

    Advisor to OSU Presidential Fellowship Awardee Digbijoy Nath. .

  • 2012

    Lumley Research Award. .

  • 2011

    Best Student Paper Award (Prashanth Ramesh). .

  • 2008

    Best Paper Award, Workshop on Frontiers of Electronics.

  • 2006

    Best Paper Award, Electronic Materials Conference 2008. .

Journal Articles

2014

  • Hung,Ting-Hsiang; Park,Pil,Sung; Krishnamoorthy,Sriram; Nath,Digbijoy,N; Rajan,Siddharth, 2014, "Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs." IEEE ELECTRON DEVICE LETTERS 35, no. 3, 312 - 314.

2013

  • Mazumder,Baishakhi; Esposto,Michele; Hung,Ting,H; Mates,Tom; Rajan,Siddharth; Speck,James,S, 2013, "Characterization of a dielectric/GaN system using atom probe tomography." APPLIED PHYSICS LETTERS 103, no. 15, 151601 -
  • Laskar,Masihhur,R; Ma,Lu; Kannappan,Santhakumar; Park,Pil,Sung; Krishnamoorthy,Sriram; Nath,Digbijoy,N; Lu,Wu; Wu,Yiying; Rajan,Siddharth, 2013, "Large area single crystal (0001) oriented MoS2." APPLIED PHYSICS LETTERS 102, no. 25, 252108 -
  • Park,Pil,Sung; Reddy,Kongara,M; Nath,Digbijoy,N; Yang,Zhichao; Padture,Nitin,P; Rajan,Siddharth, 2013, "Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion." APPLIED PHYSICS LETTERS 102, no. 15, 153501 -
  • Krishnamoorthy,Sriram; Akyol,Fatih; Park,Pil,Sung; Rajan,Siddharth, 2013, "Low resistance GaN/InGaN/GaN tunnel junctions." APPLIED PHYSICS LETTERS 102, no. 11, 113503 -
  • Kim,Hyeongnam; Nath,Digbijoy; Rajan,Siddharth; Lu,Wu, 2013, "Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors." JOURNAL OF ELECTRONIC MATERIALS 42, no. 1, 10 - 14.
  • Hung,Ting-Hsiang; Krishnamoorthy,Sriram; Esposto,Michele; Nath,Digbijoy,Neelim; Park,Pil,Sung; Rajan,Siddharth, 2013, "Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces." APPLIED PHYSICS LETTERS 102, no. 7, 072105 -
  • Arehart,A,R; Sasikumar,A; Rajan,S; Via,G,D; Poling,B; Winningham,B; Heller,E,R; Brown,D; Pei,Y; RECHT,F; Mishra,U,K; Ringel,S,A, 2013, "Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors." SOLID-STATE ELECTRONICS 80, 19 - 22.
  • Wong,Man,Hoi; Keller,Stacia; Nidhi,Sansaptak,Dasgupta; Denninghoff,Daniel,J; Kolluri,Seshadri; Brown,David,F; Lu,Jing; Fichtenbaum,Nicholas,A; Ahmadi,Elaheh; Singisetti,Uttam; Chini,Alessandro; Rajan,Siddharth; DenBaars,Steven,P; Speck,James,S; Mishra,Umesh,K, 2013, "N-polar GaN epitaxy and high electron mobility transistors." SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28, no. 7, 074009 -
  • Krishnamoorthy,Sriram; Kent,Thomas,F; Yang,Jing; Park,Pil,Sung; Myers,Roberto,C; Rajan,Siddharth, 2013, "GdN Nanoisland-Based GaN Tunnel Junctions.." Nano letters 13, no. 6, 2570 - 2575.
  • Yang,Jie; Cui,Sharon; Ma,T,P; Hung,Ting-Hsiang; Nath,Digbijoy; Krishnamoorthy,Sriram; Rajan,Siddharth, 2013, "A study of electrically active traps in AlGaN/GaN high electron mobility transistor." APPLIED PHYSICS LETTERS 103, no. 17, 173520 -
  • Yang,Jie; Cui,Sharon; Ma,T,P; Hung,Ting-Hsiang; Nath,Digbijoy; Krishnamoorthy,Sriram; Rajan,Siddharth, 2013, "Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors." APPLIED PHYSICS LETTERS 103, no. 22, 223507 -
  • Akyol,Fatih; Krishnamoorthy,Sriram; Rajan,Siddharth, 2013, "Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop." APPLIED PHYSICS LETTERS 103, no. 8, 081107 -

2012

  • Park,Pil,Sung; Nath,Digbijoy,N; Krishnamoorthy,Sriram; Rajan,Siddharth, 2012, "Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization." APPLIED PHYSICS LETTERS 100, no. 6, 063507 -
  • Di Lecce,V; Krishnamoorthy,S; Esposto,M; Hung,T-H; Chini,A; Rajan,S, 2012, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes." ELECTRONICS LETTERS 48, no. 6, 347 - 348.
  • Nath,Digbijoy,N; Park,Pil,Sung; Esposto,Michele; Brown,David; Keller,Stacia; Mishra,Umesh,K; Rajan,Siddharth, 2012, "Polarization engineered 1-dimensional electron gas arrays." JOURNAL OF APPLIED PHYSICS 111, no. 4, 043715 -
  • Fang,Tian; Wang,Ronghua; Xing,Huili; Rajan,Siddharth; Jena,Debdeep, 2012, "Effect of Optical Phonon Scattering on the Performance of GaN Transistors." IEEE ELECTRON DEVICE LETTERS 33, no. 5, 709 - 711.
  • Akyol,F; Nath,D,N; Krishnamoorthy,S; Park,P,S; Rajan,S, 2012, "Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes." APPLIED PHYSICS LETTERS 100, no. 11, 111118 -
  • Carnevale,Santino,D; Kent,Thomas,F; Phillips,Patrick,J; Mills,Michael,J; Rajan,Siddharth; Myers,Roberto,C, 2012, "Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence." NANO LETTERS 12, no. 2, 915 - 920.
  • Stemmer,Susanne; Chobpattana,Varistha; Rajan,Siddharth, 2012, "Frequency dispersion in III-V metal-oxide-semiconductor capacitors." APPLIED PHYSICS LETTERS 100, no. 23, 233510 -
  • Park,Pil,Sung; Nath,Digbijoy,N; Rajan,Siddharth, 2012, "Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures." IEEE ELECTRON DEVICE LETTERS 33, no. 7, 991 - 993.

2011

  • S. Krishnamoorthy, P.S. Park. and S. Rajan, 2011, "Demonstration of forward inter-band tunneling in GaN by polarization engineering." Applied Physic Letters 99, 233504 -
  • R. Mishra, O.D. Restrepo, S. Rajan, and W. Windl, 2011, "First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures." Applied Physics Letters 98, 232114 -
  • Pil Sung Park and Siddharth Rajan, 2011, "Simulation of Short-Channel Effects in N- and Ga-polar AlGaN/GaN HEMTs." IEEE Transactions on Electron Devices 3, no. 58, 704 -
  • F. Akyol, D. N. Nath, E. Gur and S. Rajan, 2011, "N-Polar III- Nitride green(540 nm) light emitting diode." Japanese Journal of Applied Physics 50, 052101 -
  • Ting-Hsiang Hung, Michele Esposto, and Siddharth Rajan, 2011, "Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors." Applied Physics Letters 99, 162104 -
  • J. Son ,S. Rajan, S. Stemmer, and S. James Allen, 2011, "A heterojunction modulation-doped Mott transistor." Journal of Applied Physics 110, 084503 -
  • M. Esposto,S. Krishnamoorthy, D. Nath, S. Bajaj, T. Hung, and S. Rajan, 2011, "Electrical properties of atomic layer deposited aluminum oxide on gallium nitride." Applied Physics Letters 99, 133503 -
  • P. Moetakef, T.A. Cain, D.G. Ouellette, J. Y. Zhang, D. O. Klenov, A. Janotti, C.G. Van de Walle, S. Rajan, S. J. Allen, and S. Stemmer, 2011, "Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces." Applied Physics Letters 99, 232116 -
  • D. N. Nath, E. Gur, S. A. Ringel, S. Rajan, 2011, "Growth model for plasma- assisted molecular beam epitaxy of N-polar and Ga-polar InGaN." Journal of Vacuum Science and Technology B 29, no. 29, 021206 -
  • E. Gur, Z. Zhang, S. Krishnamoorthy, S. Rajan, and S. A. Ringel, 2011, "Detailed characterization of deep level defects in InGaN schottky diodes by optical and thermal deep level spectroscopies." Applied Physics Letters 99, 092109 -
  • M. Esposto, A. Chini, and S. Rajan, 2011, "Analytical Model for Power Switching GaN- based HEMTs." IEEE Transactions on Electron Devices 58(5), 1456 -

2010

  • Chieh Kai Yang; Roblin, P.; De Groote, F.; Ringel, S. A.; Rajan, S.; Teyssier, J. P.; Poblenz, C.; Yi Pei; Speck, J.; Mishra, U. K., 2010, "Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer." IEEE Transactions on Microwave Theory and Techniques 58, no. 5, 1077 - 88.
  • Ramesh, P.; Krishnamoorthy, S.; Pil Sung Park; Rajan, S.; Washington, G. N., 2010, "Distributed Intelligence using Gallium Nitride based Active Devices." Proceedings of the SPIE - The International Society for Optical Engineering 7643, 76431W (11 pp.) -
  • Sriram Krishnamoorthy, Digbijoy N. Nath, Fatih Akyol, Pil Sung Park, Michele Esposto and Siddharth Rajan, 2010, "Polarization-engineered GaN/InGaN/GaN Tunnel Diode." Applied Physics Letters 97, 203502 -
  • C. Emre Koksal, Eylem Ekici and Siddharth Rajan, 2010, "Design and analysis of systems based on RF receivers with multiple carbon nanotube antennas." Nano Communication Networks 3, no. 1, 160 -
  • Nath, D. N.; Gur, E.; Ringel, S. A.; Rajan, S., 2010, "Molecular beam epitaxy of N-polar InGaN." Applied Physics Letters 97, no. 7, 071903 (3 pp.) -
  • Nath, D. N.; Keller, S.; Hsieh, E.; DenBaars, S. P.; Mishra, U. K.; Rajan, S., 2010, "Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure." Applied Physics Letters 97, no. 16, 162106 (3 pp.) -
  • Kolluri, S.; Keller, S.; Brown, D.; Gupta, G.; Mishra, U. K.; Denbaars, S. P.; Rajan, S., 2010, "Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates." Journal of Applied Physics 108, no. 7, 074502 (4 pp.) -
  • Tripathi, N.; Jindal, V.; Shahedipour-Sandvik, F.; Rajan, S.; Vert, A., 2010, "Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces." Solid-State Electronics 54, no. 11, 1291 - 4.

2009

  • Yi Pei; Rajan, S.; Higashiwaki, M.; Zhen Chen; DenBaars, S. P.; Mishra, U. K., 2009, "Effect of dielectric thickness on power performance of AlGaN/GaN HEMTs." IEEE Electron Device Letters 30, no. 4, 313 - 15.
  • Brown, D. F., Rajan, S., Keller, S., Hsieh, Y.-H., DenBaars, S. P. and Mishra, U. K., 2009, "Electron transport in nitrogen-polar high electron mobility transistors.." physica status solidi (c) 6, S690 -
  • Fujiwara, T.; Rajan, S.; Keller, S.; Higashiwaki, M.; Speck, J. S.; DenBaars, S. P.; Mishra, U. K., 2009, "Enhancement-mode m-plane AIGaN/GaN heterojunction field-effect transistors." Applied Physics Express 2, no. 1, 011001 (2 pp.) -
  • Tamboli, A. C.; Schmidt, M. C.; Rajan, S.; Speck, J. S.; Mishra, U. K.; DenBaars, S. P.; Hu, E. L., 2009, "Smooth top-down photoelectrochemical etching of m-plane GaN." Journal of the Electrochemical Society 156, no. 1, H47 - H51.

2008

  • Rongming Chu; Poblenz, C.; Man Hoi Wong; Dasgupta, S.; Rajan, S.; Yi Pei; Recht, F.; Likun Shen; Speck, J. S.; Mishra, U. K., 2008, "Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF4-treatment." Applied Physics Express 1, no. 6, 061101 (3 pp.) -
  • Imer, B., Schmidt, M., Haskell, B., Rajan, S., Zhong, B., Kim, K., Wu, F., Mates, T., Keller, S., Mishra, U. K., Nakamura, S., Speck, J. S. and DenBaars, S. P., 2008, "Improved quality nonpolar a -plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)." physica status solidi (a) 205, 1705 -
  • B. Imer, B. Haskell, S. Rajan, S. Keller, U. K. Mishra, S. Nakamura, J. S. Speck, S. P. DenBaars, 2008, "Electrical characterization of low defect density nonpolar (110) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)." Journal of Materials Research 23, no. 2, 551 -
  • Nidhi; Rajan, S.; Keller, S.; Feng Wu; DenBaars, S. P.; Speck, J. S.; Mishra, U. K., 2008, "Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors." Journal of Applied Physics 103, no. 12, 124508 - 1.
  • Man Hoi Wong; Yi Pei; Rongming Chu; Rajan, S.; Swenson, B. L.; Brown, D. F.; Keller, S.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K., 2008, "N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier." IEEE Electron Device Letters 29, no. 10, 1101 -
  • Brown, D. F.; Rajan, S.; Keller, S.; Yun-Hao Hsieh; DenBaars, S. P.; Mishra, U. K., 2008, "Electron mobility in N-polar GaN/AlGaN/GaN heterostructures." Applied Physics Letters 93, no. 4, 042104 - 1.
  • S. Rajan, U. K. Mishra, T. Palacios, 2008, "AlGaN/GaN HEMTs: Recent Developments and Future Directions." International Journal of High Speed Electronics and Systems, 18, no. 2, 913 -
  • Keller, S.; Suh, C. S.; Fichtenbaum, N. A.; Furukawa, M.; Chu, R.; Chen, Z.; Vijayraghavan, K.; Rajan, S.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K., 2008, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures." Journal of Applied Physics 104, no. 9, 093510 (6 pp.) -
  • Alexey Vert and Siddharth Rajan, 2008, "Properties of oxide deposited on c-plane AlGaN/GaN heterostructure." Electronics Letters 44, no. 12, 773 -
  • Raman, A.; Dasgupta, S.; Rajan, S.; Speck, J. S.; Mishra, U. K., 2008, "AlGaN channel high electron mobility transistors: device performance and power-switching figure of merit." Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers) 47, no. 5, 3359 - 61.
  • Keller, S.; Suh, C. S.; Chen, Z.; Chu, R.; Rajan, S.; Fichtenbaum, N. A.; Furukawa, M.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K., 2008, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition." Journal of Applied Physics 103, no. 3, 033708 - 1.

2007

  • Rajan, S.; Chini, A.; Man Hoi Wong; Speck, J. S.; Mishra, U. K., 2007, "N-polar GaN/AlGaN/GaN high electron mobility transistors." Journal of Applied Physics 102, no. 4, 044501 - 1.
  • M. H. Wong, S. Rajan, R. M. Chu, T. Palacios, C. S. Suh, L. S. McCarthy, S. Keller, J. S. Speck, U. K. Mishra, 2007, "N-face High Electron Mobility Transistors with a GaN-spacer." Phys. Stat. Sol. (a) 1, no. 204, 2049 -

2006

  • J. Simon, A. Wang, S. Rajan, H. Xing and D. Jena, 2006, "Carrier transport and confinement in polarization-induced 3D electron slabs: Importance of alloy scattering in AlGaN." Applied Physics Letters 88, 04219 -
  • T. B. Fehlberg, G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmueller, S. Rajan, S. Bernardis, J. S. Speck, 2006, "Characterisation of multiple carrier transport in indium nitride, grown by molecular beam epitaxy." Japanese Journal of Applied Physics 37, no. 45, L1090 -
  • Corrion, A.; Poblenz, C.; Waltereit, P.; Palacios, T.; Rajan, S.; Mishra, M. K.; Speck, J. S., 2006, "Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy." IEICE Transactions on Electronics E89-C, no. 7, 906 - 12.
  • J. Simon, K.A. Wang, H. Xing, D. Jena, and S. Rajan, 2006, "Polarization-induced 3-dimensional slabs in graded AlGaN layers." Mater. Res. Soc. Symp. Proc. no. 892,
  • Rajan, S.; DenBaars, S. P.; Mishra, U. K.; Huili Xing; Jena, D., 2006, "Electron mobility in graded AlGaN alloys." Applied Physics Letters 88, no. 4, 42103 - 1.
  • Recht, F.; McCarthy, L.; Rajan, S.; Chakraborty, A.; Poblenz, C.; Corrion, A.; Speck, J. S.; Mishra, U. K., 2006, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature." IEEE Electron Device Letters 27, no. 4, 205 - 7.

2005

  • Poblenz, C.; Waltereit, P.; Rajan, S.; Mishra, U. K.; Speck, J. S.; Chin, P.; Smorchkova, I.; Heying, B., 2005, "Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)." Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 23, no. 4, 1562 - 7.
  • Palacios, T.; Rajan, S.; Chakraborty, A.; Heikman, S.; Keller, S.; DenBaars, S. P.; Mishra, U. K., 2005, "Influence of the dynamic access resistance in the gm and fT linearity of AlGaN/GaN HEMTs." IEEE Transactions on Electron Devices 52, no. 10, 2117 - 23.
  • Haijiang Yu; McCarthy, L.; Rajan, S.; Keller, S.; Denbaars, S.; Speck, J.; Mishra, U., 2005, "Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts." IEEE Electron Device Letters 26, no. 5, 283 - 5.
  • Rajan, S.; Wong, M.; Fu, Y.; Wu, F.; Speck, J. S.; Mishra, U. K., 2005, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures." Japanese Journal of Applied Physics, Part 2 (Letters) 44, no. 46-49, 1478 - 80.
  • Palacios, T.; Chakraborty, A.; Rajan, S.; Poblenz, C.; Keller, S.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K., 2005, "High-power AlGaN/GaN HEMTs for Ka-band applications." IEEE Electron Device Letters 26, no. 11, 781 - 3.

2004

  • S. Rajan, H. Xing, D. Jena, S. DenBaars, U. K. Mishra, 2004, "An AlGaN/GaN Polarization-Doped Field-Effect Transistor for Microwave Power Applications." Applied Physics Letters 9, no. 84, 1591 -
  • C. Poblenz, P. Waltereit, S. Rajan, S. J. Heikman, U. K. Mishra, J. S. Speck, 2004, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors." Journal of Vacuum Science & Technology B 3, no. 22, 1145 -
  • Waltereit, P.; Poblenz, C.; Rajan, S.; Feng Wu; Mishra, U. K.; Speck, J. S., 2004, "Structural properties of GaN buffer layers on 4H-SiC(0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors." Japanese Journal of Applied Physics, Part 2 (Letters) 43, no. 12A, L1520 - 3.
  • S. Rajan, P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, U. K. Mishra,, 2004, "Power Performance of AlGaN/GaN HEMTs grown on SiC by Plasma-Assisted MBE." Electron Device Letters 5, no. 25, 247 -
  • S. Rajan, C. Poblenz, P. Waltereir, A. Chakraborty, J. S. Speck, U. K. Mishra, 2004, "MBE-Grown AlGaN/GaN HEMTs on SiC." International Journal of High Speed Electronics and Systems 3, no. 14, 732 -

Presentations

  • "Study of interface barrier of ALD alumina on GaN." 2011, Presented at American Vacuum Society Meeting,
  • "Polarization Engineering for III-Nitride Devices." 2008, Presented at Arizona State University,
  • "N-polar GaN Materials and Devices." 2010, Presented at University of Notre Dame, South Bend, US|USA
  • "Nanoscale GaN Electronics." 2010, Presented at Workshop on Compound Semiconductor Materials and Devices, Newport Beach,
  • "High In-content Devices and Materials." 2010, Presented at Workshop on Innovative Devices and Systems, Kona, US|USA
  • "Electron Mobility in Graded AlGaN Layers." 2010, Presented at Workshop on Compound Semiconductor Devices and Materials, Miami, US|USA
  • "Polarization Engineering in Gallium Nitride." 2009, Presented at Worskshop on Compound Semiconductor Materials and Devices, Palm Springs, US|USA
  • "Polarization Engineering in III-Nitride Electronics." 2008, Presented at University of Michigan, Ann Arbor, US|USA
  • "Tunneling in III-Nitride Devices." 2011, Presented at Workshop on Compound Semiconductor Materials and Devices 2011, Savannah, US|USA
  • "Polarization Engineering for III-Nitride Transistors." 2006, Presented at Intel Corporation,
  • "III-Nitride Transistors." 2007, Presented at General Electric Global Research, Niskayuna NY,
  • "Nanoscale Polarization Engineering in III-Nitride Electronic Devices." 2011, Presented at University of Illinois - Chicago, Chicago, US|USA
  • "Nanoscale Polarization Engineering in III-Nitride Electronic Devices." 2011, Presented at State University of New York - Albany, Albany, US|USA
  • "Polarization Engineering in III-Nitride Electronics." 2007, Presented at University of Texas - Austin, Austin, US|USA
  • "Migration-enhanced epitaxy of N-polar Indium Nitride." 2007, Presented at Workshop on Compound Semiconductor Devices and Materials, Savannah, US|USA

Papers in Proceedings

2013

  • Hung,Ting-Hsiang; Krishnamoorthy,Sriram; Nath,Digbijoy,Neelim; Park,Pi,Sung; Rajan,Siddharth "Interface Charge Engineering in GaN-based MIS-HEMTs." JOURNAL: "1st Annual IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)." in 1st Annual IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA). (1 2013). XXX -

2009

  • Brown,David,F; Rajan,Siddharth; Keller,Stacia; Hsieh,Yun-Hao; DenBaars,Steven,P; Mishra,Umesh,K "Electron transport in nitrogen-polar high electron mobility transistors." JOURNAL: "Topics in Solid State Physics." in International Workshop on Nitride Semiconductors. (1 2009). S960 - S963.

2007

  • Wong,M,H; Rajan,S; Chu,R,M; Palacios,T; Suh,C,S; McCarthy,L,S; Keller,S; Speck,J,S; Mishra,U,K "N-face high electron mobility transistors with a GaN-spacer." JOURNAL: "PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE." in 7th International Conference on Trends in Nanotechnology (TNT 2006). (6 2007). 2049 - 2053.

2006

  • Corrion,Andrea; Poblenz,Christiane; Waltereit,Patrick; Palacios,Tomas; Rajan,Siddharth; Mishra,Umesh,K; Speck,Jim,S "Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy." JOURNAL: "IEICE TRANSACTIONS ON ELECTRONICS." in 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005). (7 2006). 906 - 912.

Patents

  • Vertiatchikh; Alexei; (Schenectady, NY) ; Matocha; Kevin Sean; (Rexford, NY) ; Sandvik; Peter Micah; (Clifton Park, NY) ; Tilak; Vinayak; (Niskayuna, NY) ; Rajan; Siddharth; (Goleta, CA) ;. "Heterostructure device and associated method."
  • Nitin Padture, Dongsheng Li, Wolfgang Windl and Rajan Siddharth. "METHOD FOR MAKING GRAPHENE DEVICES."
  • Siddharth Rajan, Huili Xing, Debdeep Jena, Umesh K. Mishra. "Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same." Patent number: 7525130
  • Umesh Mishra, Siddharth Rajan, Yi Pei, Man Hoi Wong. "N-FACE HIGH ELECTRON MOBILITY TRANSISTORS WITH LOW BUFFER LEAKAGE AND LOW PARASITIC RESISTANCE." Patent number: 7,935,985
  • Rajan; Siddharth; (Goleta, CA) ; Suh; Chang Soo; (Goleta, CA) ; Speck; James S.; (Goleta, CA) ; Mishra; Umesh K.; (Santa Barbara, CA). "N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor." Patent number: 7948011
  • Vertiatchikh; Alexei; (Schenectady, NY) ; Matocha; Kevin Sean; (Rexford, NY) ; Sandvik; Peter Micah; (Clifton Park, NY) ; Tilak; Vinayak; (Niskayuna, NY) ; Rajan; Siddharth; (Goleta, CA) ; Cha; Ho-Young; (Seoul, KR). "Heterostructure device and associated method." Patent number: 8159002
  • Umesh K. Mishra, Lee McCarthy, Chang Soo Suh, Siddharth Rajan. "METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL."
  • Roberto Myers and Siddharth Rajan. "NANOSCALE EMITTERS WITH POLARIZATION GRADING."