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Siddharth Rajan

  • Professor, Materials Science Engineering
  • Professor, Electrical & Computer Engr.
  • 205 Dreese Laboratories
    2015 Neil Ave
    Columbus, OH 43210
  • 614-247-7922

About

Education

Ph.D. 2006, University of California - Santa Barbara

Areas of interest

Nano-scale semiconductor devices, molecular beam epitaxy, and III-nitride semiconductors.

Office

300 Caldwell Laboratory

Electron Device Lab:

https://nano.osu.edu

Honors

  • 20120601-20130601

    Advisor to OSU Presidential Fellowship Awardee Digbijoy Nath.

  • 20120501

    Lumley Research Award.

  • 20110101

    Best Student Paper Award (Prashanth Ramesh).

  • 20080101

    Best Paper Award, Workshop on Frontiers of Electronics.

  • 20060101

    Best Paper Award, Electronic Materials Conference 2008.

Journal Articles

2018

  • Pratiyush, A.S.; Krishnamoorthy, S.; Kumar, S.; Xia, Z. et al., 2018, "Demonstration of zero bias responsivity in MBE grown β-Ga2O3lateral deep-UV photodetector." Japanese Journal of Applied Physics 57, no. 6,

2017

  • Doolittle, A.; Palacios, T.; Keller, S.; Rajan, S. et al., 2017, "Nitride Semiconductors." Physica Status Solidi (B) Basic Research 254, no. 8,

2016

  • Ghione, G.; Iñiguez, B.; Rajan, S., 2016, "Changes in the Editorial Board." IEEE Transactions on Electron Devices 63, no. 12, 4556 - 4556.

2013

  • Krishnamoorthy,Sriram; Kent,Thomas,F; Yang,Jing; Park,Pil,Sung; Myers,Roberto,C; Rajan,Siddharth, 2013, "GdN Nanoisland-Based GaN Tunnel Junctions.." Nano letters 13, no. 6, 2570-2575 - 2570-2575.
  • Arehart,A,R; Sasikumar,A; Rajan,S; Via,G,D; Poling,B; Winningham,B; Heller,E,R; Brown,D; Pei,Y; RECHT,F; Mishra,U,K; Ringel,S,A, 2013, "Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors." SOLID-STATE ELECTRONICS 80, 19-22 - 19-22.

2012

  • Carnevale,Santino,D; Kent,Thomas,F; Phillips,Patrick,J; Mills,Michael,J; Rajan,Siddharth; Myers,Roberto,C, 2012, "Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence." NANO LETTERS 12, no. 2, 915-920 - 915-920.

2011

  • D. N. Nath, E. Gur, S. A. Ringel, S. Rajan, 2011, "Growth model for plasma- assisted molecular beam epitaxy of N-polar and Ga-polar InGaN." Journal of Vacuum Science and Technology B 29, no. 29, 021206 - 021206.
  • Pil Sung Park and Siddharth Rajan, 2011, "Simulation of Short-Channel Effects in N- and Ga-polar AlGaN/GaN HEMTs." IEEE Transactions on Electron Devices 3, no. 58, 704 - 704.
  • R. Mishra, O.D. Restrepo, S. Rajan, and W. Windl, 2011, "First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures." Applied Physics Letters 98, 232114 - 232114.

2010

  • Nath, D. N.; Gur, E.; Ringel, S. A.; Rajan, S., 2010, "Molecular beam epitaxy of N-polar InGaN." Applied Physics Letters 97, no. 7, 071903 (3 pp.) - 071903 (3 pp.).
  • Chieh Kai Yang; Roblin, P.; De Groote, F.; Ringel, S. A.; Rajan, S.; Teyssier, J. P.; Poblenz, C.; Yi Pei; Speck, J.; Mishra, U. K., 2010, "Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer." IEEE Transactions on Microwave Theory and Techniques 58, no. 5, 1077-88 - 1077-88.
  • C. Emre Koksal, Eylem Ekici and Siddharth Rajan, 2010, "Design and analysis of systems based on RF receivers with multiple carbon nanotube antennas." Nano Communication Networks 3, no. 1, 160 - 160.

2009

  • Brown, D. F., Rajan, S., Keller, S., Hsieh, Y.-H., DenBaars, S. P. and Mishra, U. K., 2009, "Electron transport in nitrogen-polar high electron mobility transistors.." physica status solidi (c) 6, S690 - S690.

2008

  • Rajan, S.; Mishra, U.K.; Palacios, T., 2008, "AlGaN/GaN HEMTs: Recent developments and furure directions." International Journal of High Speed Electronics and Systems 18, no. 4, 913-922 - 913-922.
  • S. Rajan, U. K. Mishra, T. Palacios, 2008, "AlGaN/GaN HEMTs: Recent Developments and Future Directions." International Journal of High Speed Electronics and Systems, 18, no. 2, 913 - 913.

2007

  • M. H. Wong, S. Rajan, R. M. Chu, T. Palacios, C. S. Suh, L. S. McCarthy, S. Keller, J. S. Speck, U. K. Mishra, 2007, "N-face High Electron Mobility Transistors with a GaN-spacer." Phys. Stat. Sol. (a) 1, no. 204, 2049 - 2049.

2006

  • Rajan, S.; DenBaars, S. P.; Mishra, U. K.; Huili Xing; Jena, D., 2006, "Electron mobility in graded AlGaN alloys." Applied Physics Letters 88, no. 4, 42103-1 - 42103-1.
  • T. B. Fehlberg, G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmueller, S. Rajan, S. Bernardis, J. S. Speck, 2006, "Characterisation of multiple carrier transport in indium nitride, grown by molecular beam epitaxy." Japanese Journal of Applied Physics 37, no. 45, L1090 - L1090.
  • Corrion, A.; Poblenz, C.; Waltereit, P.; Palacios, T.; Rajan, S.; Mishra, M. K.; Speck, J. S., 2006, "Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy." IEICE Transactions on Electronics E89-C, no. 7, 906-12 - 906-12.

2004

  • S. Rajan, H. Xing, D. Jena, S. DenBaars, U. K. Mishra, 2004, "An AlGaN/GaN Polarization-Doped Field-Effect Transistor for Microwave Power Applications." Applied Physics Letters 9, no. 84, 1591 - 1591.
  • S. Rajan, P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, U. K. Mishra,, 2004, "Power Performance of AlGaN/GaN HEMTs grown on SiC by Plasma-Assisted MBE." Electron Device Letters 5, no. 25, 247 - 247.
  • C. Poblenz, P. Waltereit, S. Rajan, S. J. Heikman, U. K. Mishra, J. S. Speck, 2004, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors." Journal of Vacuum Science & Technology B 3, no. 22, 1145 - 1145.
  • Waltereit, P.; Poblenz, C.; Rajan, S.; Wu, F. et al., 2004, "Structural properties of GaN buffer layers on 4H-SiC(0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors." Japanese Journal of Applied Physics, Part 2: Letters 43, no. 12 A,

Presentations

  • "Polarization Engineering in III-Nitride Electronics." 2008, Presented at University of Michigan,
  • "Polarization Engineering for III-Nitride Devices." 2008, Presented at Arizona State University,
  • "Polarization Engineering in Gallium Nitride." 2009, Presented at Worskshop on Compound Semiconductor Materials and Devices,
  • "Nanoscale Polarization Engineering in III-Nitride Electronic Devices." 2011, Presented at State University of New York - Albany,
  • "Polarization Engineering for III-Nitride Transistors." 2006, Presented at Intel Corporation,
  • "N-polar GaN Materials and Devices." 2010, Presented at University of Notre Dame,
  • "Nanoscale GaN Electronics." 2010, Presented at Workshop on Compound Semiconductor Materials and Devices,
  • "High In-content Devices and Materials." 2010, Presented at Workshop on Innovative Devices and Systems,
  • "Polarization Engineering in III-Nitride Electronics." 2007, Presented at University of Texas - Austin,
  • "Migration-enhanced epitaxy of N-polar Indium Nitride." 2007, Presented at Workshop on Compound Semiconductor Devices and Materials,
  • "III-Nitride Transistors." 2007, Presented at General Electric Global Research, Niskayuna NY,
  • "Tunneling in III-Nitride Devices." 2011, Presented at Workshop on Compound Semiconductor Materials and Devices 2011,
  • "Study of interface barrier of ALD alumina on GaN." 2011, Presented at American Vacuum Society Meeting,
  • "Nanoscale Polarization Engineering in III-Nitride Electronic Devices." 2011, Presented at University of Illinois - Chicago,

Papers in Proceedings

2016

  • Yang, Z.; Zhang, Y.; Krishnamoorthy, S.; Nath, D.N. et al. "Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter." (8 2016).

2015

  • Arulkumaran, S.; Ng, G.I.; Manojkumar, C.M.; Ranjan, K. et al. "In<inf>0.17</inf>Al<inf>0.83</inf>N/AlN/GaN Triple T-shape Fin-HEMTs with g<inf>m</inf>=646 mS/mm, I<inf>ON</inf>=1.03 A/mm, I<inf>OFF</inf>=1.13 μa/mm, SS=82 mV/dec and DIBL=28 mV/V at V<inf>D</inf>=0.5 v." (1 2015).

2012

  • Su, M.; Chen, C.; Chen, L.; Esposto, M. et al. "Challenges in the automotive application of GaN power switching devices." (12 2012).
  • Growden, T.A.; Krishnamoorthy, S.; Nath, D.N.; Ramesh, A. et al. "Methods for attaining high interband tunneling current in III-Nitrides." (10 2012).

2011

  • Krishnamoorthy, S.; Park, P.; Rajan, S. "III-nitride tunnel diodes with record forward tunnel current density." (12 2011).
  • Fang, T.; Wang, R.; Li, G.; Xing, H. et al. "Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors." (12 2011).

2008

  • Rajan, S.; Pei, Y.; Cheng, Z.; Denbaars, S.P. et al. "Surface passivation of AlGaN/GaN HEMTs." (12 2008).
  • Wong, M.H.; Pei, Y.; Chu, R.; Rajan, S. et al. "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier." (12 2008).

2005

  • Chini, A.; Rajan, S.; Wong, M.; Fu, Y. et al. "Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs." (12 2005).

2004

  • Rajan, S.; Chakraborty, A.; Mishra, U.K.; Poblenz, C. et al. "MBE-grown AlGaN/GaN HEMTs on SiC." (9 2004).
  • Yu, H.; McCarthy, L.; Rajan, S.; Keller, S. et al. "Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs." (12 2004).
  • Palacios, T.; Rajan, S.; Shen, L.; Chakraborty, A. et al. "Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs." (12 2004).

Patents

  • Nitin Padture, Dongsheng Li, Wolfgang Windl and Rajan Siddharth. "METHOD FOR MAKING GRAPHENE DEVICES."
  • Roberto Myers and Siddharth Rajan. "NANOSCALE EMITTERS WITH POLARIZATION GRADING."
  • Siddharth Rajan, Huili Xing, Debdeep Jena, Umesh K. Mishra. "Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same." Patent number: 7525130
  • Umesh Mishra, Siddharth Rajan, Yi Pei, Man Hoi Wong. "N-FACE HIGH ELECTRON MOBILITY TRANSISTORS WITH LOW BUFFER LEAKAGE AND LOW PARASITIC RESISTANCE." Patent number: 7,935,985
  • Rajan; Siddharth; (Goleta, CA) ; Suh; Chang Soo; (Goleta, CA) ; Speck; James S.; (Goleta, CA) ; Mishra; Umesh K.; (Santa Barbara, CA). "N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor." Patent number: 7948011
  • Vertiatchikh; Alexei; (Schenectady, NY) ; Matocha; Kevin Sean; (Rexford, NY) ; Sandvik; Peter Micah; (Clifton Park, NY) ; Tilak; Vinayak; (Niskayuna, NY) ; Rajan; Siddharth; (Goleta, CA) ; Cha; Ho-Young; (Seoul, KR). "Heterostructure device and associated method." Patent number: 8159002
  • Vertiatchikh; Alexei; (Schenectady, NY) ; Matocha; Kevin Sean; (Rexford, NY) ; Sandvik; Peter Micah; (Clifton Park, NY) ; Tilak; Vinayak; (Niskayuna, NY) ; Rajan; Siddharth; (Goleta, CA) ;. "Heterostructure device and associated method."
  • Umesh K. Mishra, Lee McCarthy, Chang Soo Suh, Siddharth Rajan. "METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL."