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Leonard Brillson

  • Professor and CMR Scholar, Electrical & Computer Engr.
  • Professor & CMR Scholar, Physics
  • 2015 Neil Ave, 205 Dreese Lab
    2176 Physics Research Bldg
    Columbus, OH 43210
  • 614-292-8015

About

Education

Ph.D. 1972, University of Pennsylvania

Areas of interest

Electronic materials, semiconductor heterojunction and metal contacts, nanoelectronics, optoelectronics, surface science, defects in crystalline semiconductors, materials characterization and processing.

Office

387 Caldwell Laboratory

Honors

  • 2006

    Gaede-Langmuir Award.

  • 2002

    AAAS Fellow.

Journal Articles

2007

  • Smith, P. E.; Lueck, M.; Ringel, S. A.; Brillson, L. J., 2007, "Atomic diffusion and electronic structure in Al0.52 In0.48 PGaAs heterostructures." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25, no. 6,

2005

  • Brillson, Leonard J.; Bradley, Shawn T.; Tumakha, Sergey H.; Goss, Stephen H.; Sun, Xiaoling L.; Okojie, Robert S.; Hwang, J.; Schaff, William J., 2005, "Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces." Applied Surface Science 244, no. 1-4, 257 - 263.

2004

  • Brillson, L. J.; Tumakha, S.; Okojie, R. S.; Zhang, M.; Pirouz, P., 2004, "Electron-excited luminescence of SiC surfaces and interfaces." Journal of Physics Condensed Matter 16, no. 17,

2003

  • Brillson, Leonard J., 2003, "Electronic materials and processing: 1979-2003." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21, no. 5 SUPPL.,
  • Hu, Xinwen; Karmarkar, Aditya P.; Jun, Bongim; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Geil, Robert D.; Weller, Robert A.; White, Brad D.; Bataiev, Mykola; Brillson, Leonard J.; Mishra, Umesh K., 2003, "Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors." IEEE Transactions on Nuclear Science 50, no. 6 I,
  • Strzhemechny, Yuri M.; Nemergut, John; Bae, Junjik; Look, David C.; Brillson, Leonard J., 2003, "Effect of remote hydrogen plasma treatment on ZnO single crystal surfaces." Materials Research Society Symposium - Proceedings 744, no. M3.9, 1 - 6.
  • Jessen, G. H.; Fitch, R. C.; Gillespie, J. K.; Via, G. D.; White, B. D.; Bradley, S. T.; Walker Jr. , D. E.; Brillson, L. J., 2003, "Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors." Applied Physics Letters 83, no. 3,
  • Rockett, A.; Liao, D.; Heath, J. T.; Cohen, J. D.; Strzhemechny, Y. M.; Brillson, L. J.; Ramanathan, K.; Shafarman, W. N., 2003, "Near-surface defect distributions in Cu(In,Ga)Se$-2$/." Thin Solid Films 431-432,
  • White, B. D.; Bataiev, M.; Goss, S. H.; Hu, X.; Karmarkar, A.; Fleetwood, D. M.; Schrimpf, R. D.; Schaff, W. J.; Brillson, L. J., 2003, "Electrical, Spectral, and Chemical Properties of 1.8 MeV Proton Irradiated AlGaN/GaN HEMT Structures as a Function of Proton Fluence." IEEE Transactions on Nuclear Science 50, no. 6 I,

2002

  • White, B. D.; Bataiev, M.; Brillson, L. J.; Choi, B. K.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.; Dettmer, R. W.; Schaff, W. J.; Champlain, J. G.; Mishra, U. K., 2002, "Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy." IEEE Transactions on Nuclear Science 49 I, no. 6,
  • Brillson, L. J.; Bradley, S. T.; Goss, S. H.; Sun, X.; Murphy, M. J.; Schaff, W. J.; Eastman, L. F.; Look, D. C.; Molnar, R. J.; Ponce, F. A.; Ikeo, N.; Sakai, Y., 2002, "Low-energy electron-excited nanoluminescence studies of GaN and related materials." Applied Surface Science 190, no. 1-4,
  • Okojie, Robert S.; Xhang, Ming; Pirouz, Pirouz; Tumakha, Sergey; Jessen, Gregg; Brillson, Leonard J., 2002, "4H-to 30-SiC polytypic transformation during oxidation." Materials Science Forum 389-393, no. 1,
  • Okojie, Robert S.; Lukco, Dorothy; Keys, Luann; Tumakha, Sergey; Brillson, Leonard J., 2002, "Surface morphology and chemistry of 4H- and 6H-SiC after cyclic oxidation." Materials Science Forum 389-393, no. 2, 1101 - 1103.
  • Look, D. C.; Jones, R. L.; Sun, X. L.; Brillson, L. J.; Ager III, J. W.; Park, S. S.; Han, J. H.; Molnar, R. J.; Maslar, J. E., 2002, "Electrical and optical properties of GaN/Al$-2$/O$-3$/ interfaces." Journal of Physics Condensed Matter 14, no. 48,
  • Strzhemechny, Y. M.; Smith, P. E.; Bradley, S. T.; Liao, D. X.; Rockett, A. A.; Ramanathan, K.; Brillson, L. J., 2002, "Near-surface electronic defects and morphology of Culn$-1-x$/Ga$-x $/Se$-2$/." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20, no. 6,

2001

  • Goss, S. H.; Young, A. P.; Brillson, L. J.; Look, D. C.; Molnar, R. J., 2001, "Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy." Materials Research Society Symposium - Proceedings 639,
  • Bradley, S. T.; Young, A. P.; Brillson, L. J.; Murphy, M. J.; Schaff, W. J.; Eastman, L. F., 2001, "Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement." IEEE Transactions on Electron Devices 48, no. 3,
  • Brillson, L. J., 2001, "Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 19, no. 5,
  • Goss, S. H.; Parkin, S. S. P.; Brillson, L. J., 2001, "Analysis of tunneling magnetoresistance test structures by low energy electron nanoscale-luminescence spectroscopy." Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 19, no. 4,
  • Brillson, L. J.; Young, A. P.; Jessen, G. H.; Levin, T. M.; Bradley, S. T.; Goss, S. H.; Bae, J.; Ponce, F. A.; Murphy, M. J.; Schaff, W. J.; Eastman, L. F., 2001, "Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces." Applied Surface Science 175-176, 442 - 449.
  • Bradley, S. T.; Young, A. P.; Brillson, L. J.; Murphy, M. J.; Schaff, W. J., 2001, "Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures." Journal of Electronic Materials 30, no. 3,

2000

  • Brillson, L.J.; Young, A.P.; Levin, T.M.; Jessen, G.H.; Schafer, J.; Yang, Y.; Xu, S.H.; Cruguel, H.; Lapeyre, G.J.; Ponce, F.A.; Naoi, Y.; Tu, C.; McKenzie, J.D.; Abernathy, C.R., 2000, "Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces." Journal of Materials Science and Engineering 75, no. 2, 218 -
  • White, B. D.; Brillson, L. J.; Lee, S. C.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.; Lee, Y. -M.; Lucovsky, G., 2000, "Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation." IEEE Transactions on Nuclear Science 47, no. 6 III,
  • Young, A.P.; Goss, S.H.; Brillson, L.J.; MacKenzie, J.D.; Abernathy, C.R., 2000, "Low energy electron excited nanoscale luminescence spectroscopy of erbium doped AlN." Journal of Electronic Materials 29, no. 3,
  • Brillson, L.J.; Young, A.P.; White, B.D.; Schafer, J.; Niimi, H.; Lee, Y.M.; Lucovsky, G., 2000, "Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO$-2$//Si interfaces." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18, no. 3,
  • Young, Alexander P.; Brillson, Leonard J.; Naoi, Yoshiki; Tu, Charles W., 2000, "Effect of nitrogen ion damage on the optical and electrical properties of MBE GaN grown on MOCVD GaN/sapphire templates." MRS Internet J. Nitride Semicond. Res. 5S1, no. W11, 56 - 61.

1999

  • Hierro, A.; Kwon, D.; Ringel, S.A.; Brillson, L.J.; Young, A.P.; Franciosi, A., 1999, "Deep level characterization of interface-engineered ZnSe layers grown by molecular beam epitaxy on GaAs." Materials Research Society Symposium - Proceedings 535,
  • Young, A.P.; Schafer, J.; Brillson, L.J.; Yang, Y.; Xu, S.H.; Cruguel, H.; Lapeyre, G.J.; Johnson, M.A.L.; Schetzina, J.F., 1999, "Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy." Journal of Electronic Materials 28, no. 3,
  • Brillson, L.J.; Levin, T.M.; Jessen, G.H.; Young, A.P.; Tu, C.; Naoi, Y.; Ponce, F.A.; Yang, Y.; Lapeyre, G.J.; MacKenzie, J.D.; Abernathy, C.R., 1999, "Defect formation near GaN surfaces and interfaces." Physica B: Condensed Matter 273,
  • Schafer, J.; Young, A.P.; Levin, T.M.; Brillson, L.J.; Paggel, J.J.; Vanzetti, L.; Franciosi, A., 1999, "Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer." Journal of Electronic Materials 28, no. 7,
  • Brillson, L.J.; Young, A.P.; Schafer, J.; Niimi, H.; Lucovsky, G., 1999, "Ultrathin silicon oxide and nitride-silicon interface states." Materials Research Society Symposium - Proceedings 567,

1998

  • Schafer, J.; Young, A. P.; Brillson, L. J.; Niimi, H.; Lucovsky, G., 1998, "Cathodoluminescence studies of Si-SiO$-2$/ interfaces prepared by plasma-assisted oxidation and subjected to post-oxidation rapid thermal annealing." Materials Research Society Symposium - Proceedings 525,

1995

  • Raisanen, A.; Brillson, L. J.; Vanzetti, L.; Sorba, L.; Franciosi, A., 1995, "Deep levels near 'buried' ZnSe/GaAs(100) heterointerfaces." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13, no. 3 pt 1,
  • Raisanen, A.; Brillson, L. J.; Franciosi, A.; Nicolini, R.; Vanzetti, L.; Sorba, L., 1995, "Deep level electronic structure of ZnSe/GaAs heterostructures." Journal of Electronic Materials 24, no. 3,
  • Raisanen, A. D.; Brillson, L. J.; Vanzetti, L.; Bonanni, A.; Franciosi, A., 1995, "Deep level formation at ZnSe/GaAs(100) interfaces." Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 13, no. 4, 1705 -
  • A.D. Raisanen, L.J. Brillson, A. Franciosi, R. Nicolini, L. Vanzetti, G. Mula, G. Bratina, and L. Sorba, 1995, "Deep Level Electronic Structure of ZnSe/GaAs Heterojunctions." J. Electron. Mater. 24, 163 -

1994

  • Goldman, R. S.; Rammohan, K.; Raisanen, A.; Goorsky, M.; Brillson, L. J.; Rich, D. H.; Wieder, H. H.; Kavanagh, K. L., 1994, "Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions." Materials Research Society Symposium Proceedings 340,
  • Raisanen, A.; Brillson, L. J.; Goldman, R. S.; Kavanagh, K. L.; Wieder, H., 1994, "Dislocation-induced deep level states in In$-0.08$/Ga$-0.92$/As/GaAs heterostructures." Journal of Electronic Materials 23, no. 9,
  • I. M. Vitomirov, A. D. Raisanen, S. Chang, L.J. Brillson, C. L. Lin, D. T. McInturff, P. D. Kirchner, and J. M. Woodall, 1994, "Deep levels and band bending at GaP(100) and (110) surfaces." Surface Science 307-09, no. pt A, 303 -

1993

  • Fauchet, P. M.; Ettedgui, E.; Raisanen, A.; Brillson, L. J.; Seiferth, F.; Kurinec, S. K.; Gao, Y.; Peng, C.; Tsybeskov, L., 1993, "Can oxidation and other treatments help us understand the nature of light-emitting porous silicon?." Materials Research Society Symposium Proceedings 298,
  • Vitomirov, I. M.; Raisanen, A.; Chang, S.; Viturro, R. E.; Brillson, L. J.; Rioux, D. F.; Kirchner, P. D.; Pettit, G. D.; Woodall, J. M., 1993, "Effect of semiconductor growth method and bulk doping on Fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)." Journal of Electronic Materials 22, no. 1,
  • Brillson, L. J.; Vitomirov, I. M.; Raisanen, A.; Chang, S.; Viturro, R. E.; Kirchner, P. D.; Pettit, G. D.; Woodall, J. M., 1993, "Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft x-ray photoemission spectroscopies." Applied Surface Science 65-66, 667 -

1992

  • Vitomirov, I. M.; Raisanen, A. D.; Brillson, L. J.; Kirchner, P. D.; Pettit, G. D.; Woodall, J. M., 1992, "Impact of surface processing on Al/GaAs(100) interface states." Solid State Communications 84, no. 1-2,

1990

  • Brillson, L. J.; Chang, S.; Shaw, J.; Viturro, R. E., 1990, "Interface states at metal-compound semiconductor junctions." Vacuum 41, no. 4-6 Pt2,

1989

  • Shaw, J. L.; Viturro, R. E.; Brillson, L. J.; Lagraffe, D., 1989, "Influence of deep states on CdTe and GaAs metal interface formation." 18, no. 1,

1988

  • Chiaradia, P.; Fanfoni, M.; De Padova, P.; Nataletti, P.; Brillson, L. J.; Viturro, R. E.; Slade, M. L.; Margaritondo, G.; Kelly, M. K.; Kilday, D.; Tache, N., 1988, "Initial stages of GaP(110) oxidation." 67, no. 6,

1986

  • Allara, David L.; Brillson, Leonard J.; Brusic, Vlasta; Buckley, Donald H.; Chelikowsky, James R.; Clark, William A. T.; Clarke, David R.; Ferrante, John; Fowkes, Fred M.; Gottschall, Robert J.; Grant, Ron W.; McMahon, Charles J. Jr.; Margaritondo, Giorgio; Mattox, Donald M.; Noolandi, Jaan, 1986, "PANEL REPORT ON INTERFACIAL BONDING AND ADHESION.." Materials Science and Engineering 83, no. 2,
  • Shapira, Yoram; Brucker, C. F.; Brillson, L. J., 1986, "STUDIES OF CaF//2-CdSe INTERFACES USING UV AND X-RAY PHOTOEMISSION SPECTROSCOPY AND AUGER ELECTRON SPECTROSCOPY.." Thin Solid Films 135, no. 2,

1985

  • Margaritondo, G.; Brillson, L. J.; Brusic, V.; Chelikowsky, J. R.; Grant, R. W.; Rubloff, G. W., 1985, "SEMICONDUCTOR INTERFACES.." Materials Science and Engineering 83, no. 2,

1984

  • Richter, H. W.; Brillson, L. J., 1984, "CONTROL AND CHARACTERIZATION OF METAL-InP AND GaAs INTERFACE STRUCTURES FORMED BY LASER-ENHANCED REACTIONS.." Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 2, no. 3,

1983

  • Brillson, L. J., 1983, "CONTACT TECHNOLOGY IN 3-5 DEVICE ANALYSIS AND MODIFICATION OF METAL-SEMICONDUCTOR CONTACT INTERFACES IN 3-5 DEVICES.." Technical Digest - International Electron Devices Meeting
  • Brillson, L. J., 1983, "ADVANCES IN UNDERSTANDING METAL-SEMICONDUCTOR INTERFACES BY SURFACE SCIENCE TECHNIQUES.." Journal of Physics and Chemistry of Solids 44, no. 8,

1982

  • Brucker, C. F.; Brillson, L. J., 1982, "ROLE OF CATION DISSOCIATION IN SCHOTTKY BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR-METAL INTERFACES.." Materials Research Society Symposia Proceedings 10,
  • Brillson, L. J.; Brucker, C. F.; Stoffel, N. G.; Katnani, A.; Daniels, R.; Margaritondo, G., 1982, "PHOTOEMISSION STUDIES OF REACTIVE DIFFUSION AND LOCALIZED DOPING AT 11-VI COMPOUND SEMICONDUCTOR-METAL INTERFACES.." Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics 117-118, no. Pt II,

1981

  • Stoffel, N. G.; Daniels, R. R.; Margaritondo, G.; Brucker, C. F.; Brillson, L. J., 1981, "CdS-Cu INTERFACE FORMATION: A MICROSCOPIC STUDY OF THE INTERDIFFUSION AND CHEMICAL PROCESSES.." Journal of Vacuum Science and Technology 20, no. 3,
  • Khan, A.; Brillson, L. J.; Katnani, A. D.; Margaritondo, G., 1981, "SOFT X-RAY PHOTOEMISSION STUDY OF ANNEALED Al-OVERLAYERS ON GaAs(110).." Solid State Communications 38, no. 12,
  • Brillson, L. J.; Brucker, C. F.; Katnani, A. D.; Stoffel, N. G.; Margaritondo, G., 1981, "ATOMIC AND ELECTRONIC STRUCTURE OF InP-METAL INTERFACES: A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR.." Journal of Vacuum Science and Technology 19, no. 3,
  • Brucker, C. F.; Brillson, L. J., 1981, "REACTIVE INTERDIFFUSION AND ELECTRONIC BARRIERS AT METAL-CdS AND METAL-CdSe INTERFACES: CONTROL OF SCHOTTKY BARRIER HEIGHT USING REACTIVE INTERLAYERS.." Journal of Vacuum Science and Technology 19, no. 3,
  • Brucker, C. F.; Brillson, L. J., 1981, "ROLE OF CATION DISSOCIATION IN SCHOTTKY BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR-METAL INTERFACES.." Thin Solid Films 93, no. 1/2,

1980

  • Brucker, C. F.; Brillson, L. J., 1980, "REACTIVE INTERDIFFUSION AT METAL-CdS AND METAL-CdSe INTERFACES.." Journal of Vacuum Science and Technology 18, no. 3,
  • Brillson, L. J.; Margaritondo, G.; Stoffel, N. G.; Bauer, R. S.; Bachrach, R. Z.; Hansson, G., 1980, "MEASUREMENT AND MODULATION OF ATOMIC INTERDIFFUSION AT Au-Al/GaAs(110) INTERFACES.." Journal of Vacuum Science and Technology 17, no. 5,

1979

  • Brillson, L. J.; Bauer, R. S.; Bachrach, R. Z.; McMenamin, J. C., 1979, "BONDING AND DIFFUSION AT Al AND Au INTERFACES WITH CdS.." Journal of Vacuum Science and Technology 17, no. 1,