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Leonard Brillson

  • Professor & CMR Scholar, Physics
  • Professor and CMR Scholar, Electrical & Computer Engr.
  • 2015 Neil Ave, 205 Dreese Lab
    2176 Physics Research Bldg
    Columbus, OH 43210
  • 614-292-8015

About

Education

Ph.D. 1972, University of Pennsylvania

Areas of interest

Electronic materials, semiconductor heterojunction and metal contacts, nanoelectronics, optoelectronics, surface science, defects in crystalline semiconductors, materials characterization and processing.

Office

387 Caldwell Laboratory

Honors

  • 20130101

    Lumley Interdisciplinary Research Award.

  • 20110101

    Lumley Research Award.

  • 20070101

    Member.

  • 20060101

    Gaede-Langmuir Award.

  • 20060101

    Lumley Research Award.

  • 20020101

    AAAS Fellow.

  • 20010101

    Outstanding Speaker Award.

  • 20010101

    Lumley Research Award.

  • 20000101

    Technical Achievement Award.

  • 19980101-20000101

    Centennial Speaker.

  • 19960101

    Outstanding Achievement Award.

  • 19960101

    Science Excellence Award.

  • 19930101

    Citation Classic Author.

Edited Books

1993

  • N/A. 1993. "Contacts to Semiconductors: Fundamentals and Technology." Noyes Press.

1986

  • N/A. 1986. "Proceedings of the Topical Conference on Frontiers in Electronic Materials." American Institute of Physics.

Chapters

2013

  • 2013. "The effect of thermal reactor neutron irradiation on semi-insulating GaN,â€� Radiation Effects & Defects." In Radiation Effects & Defects in Solids: Incorporating Plasma Science and Plasma Technology,

2011

  • 2011. "Surface Properties and Electrical Contacts on ZnO." In ZnO Materials for Electronic and Optoelectronic Device Applications, edited by C.W. Litton, D.C.Litton, and T.C. Collins,

1993

  • 1993. "Interface States." In Contacts to Semiconductors, Fundamentals and Technology, edited by L.J. Brillson,

1992

  • 1992. "Surfaces and Interfaces: Atomic-Scale Structure, Band Bending and Band Offsets." In Handbook on Semiconductors, edited by P. T. Landsberg,
  • 1992. "Schottky Barrier Contacts for Compound Semiconductors." In Encyclopedia of Advanced Materials, edited by S. Mahajan and L.C. Kimerling,
  • 1992. "Schottky Barriers." In Concise Encyclopedia of Electronic and Optoelectronic Materials, edited by L. C. Kimerling,

1988

  • 1988. "Characterization of Schottky Barriers Applied to III-V Compounds." In Materials and Process Characterization for VLSI, edited by X.-F. Zong, Y.-Y. Wang, and J. Chen,

1986

  • 1986. "Metallization of III-V Compounds." In Semiconductor- Based Heterostructures: Interfacial Structure and Stability, edited by J.E.E.Baglin, G.Y.Chin, H. W. Deckman, W. Mayo, and D. Narasinham,

Journal Articles

2014

  • Katz,Evan,J; Lin,Chung-Han; Qiu,Jie; Zhang,Zhichun; Mishra,Umesh,K; Cao,Lei; Brillson,Leonard,J, 2014, "Neutron irradiation effects on metal-gallium nitride contacts." JOURNAL OF APPLIED PHYSICS 115, no. 12, 123705 - 123705.

2013

  • Lin,Chung-Han; Katz,Evan,J; Qiu,Jie; Zhang,Zhichun; Mishra,Umesh,K; Cao,Lei; Brillson,Leonard,J, 2013, "Neutron irradiation effects on gallium nitride-based Schottky diodes." APPLIED PHYSICS LETTERS 103, no. 16, 162106 - 162106.

2012

  • Brillson,Leonard,J; Dong,Yufeng; Tuomisto,Filip; Svensson,Bengt,G; Kuznetsov,Andrei,Yu; Doutt,Daniel; Mosbacker,H,Lee; Cantwell,Gene; Zhang,Jizhi; Song,Jin,Joo; Fang,Z-Q; Look,David,C, 2012, "Interplay of native point defects with ZnO Schottky barriers and doping." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 30, no. 5, 050801 - 050801.
  • Lin,Chung-Han; Merz,Tyler,A; Doutt,Daniel,R; Joh,Jungwoo; Del Alamo,Jesus,A; Mishra,Umesh,K; Brillson,Leonard,J, 2012, "Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale." IEEE TRANSACTIONS ON ELECTRON DEVICES 59, no. 10, 2667-2674 - 2667-2674.
  • E.J. Katz, H.L. Hughes, M.E. Twigg, B.J. Mrstik, G. Lucovsky, and L.J. Brillson, 2012, "Electrical and Nanoscale Depth Resolved Properties of Plasma Deposited Silicon- Rich SiOx Oxides for Radiation Tolerant Electronics." J. Radiation Effects, Research and Engineering 30, no. 1, 133 - 133.

2011

  • Wen,Xuejin; Gupta,Samit; Nicholson,Theodore,R; Lee,Stephen,C; Lu,Wu, 2011, "AlGaN/GaN HFET biosensors working at subthreshold regime for sensitivity enhancement." PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 8, no. 7-8, 2489-2491 - 2489-2491.
  • Gupta,Samit,K; Wu,Hao-Hsuan; Kwak,Kwang,J; Casal,Patricia; Nicholson,Theodore,R; Wen,Xuejin; Anisha,R; Bhushan,Bharat; Berger,Paul,R; Lu,Wu; Brillson,Leonard,J; Lee,Stephen,Craig, 2011, "Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces." JOURNAL OF PHYSICS D-APPLIED PHYSICS 44, no. 3, 034010 - 034010.

2010

  • Tadjer,Marko,J; Feygelson,Tatyana,I; Hobart,Karl,D; Caldwell,Joshua,D; Anderson,Travis,J; Butler,James,E; Eddy,Charles,R; Gaskill,D,Kurt; Lew,K,K; VanMil,Brenda,L; Myers-Ward,Rachael,L; Kub,Fritz,J; Sollenberger,Gregory; Brillson,Leonard, 2010, "On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC." APPLIED PHYSICS LETTERS 97, no. 19, 193510 - 193510.
  • T. R. Nicholson III, S. Gupta, X. Wen, H.-H. Wu, A. Ramish, P. Casal, K. J. Kwak, B. Bhushan, P. R. Berger, W. Lu, L. J. Brillson, Stephen Craig Lee, 2010, "Rational enhancement of nanobio-technological device function illustrated by partial optimization of a protein sensing field effect transistor." J. Nanoengineering and Nanosystems 223, 149-161 - 149-161.
  • C-H. Lin, D.R. Doutt, U.K. Mishra, T.A. Merz, and L.J. Brillson, 2010, "Field-Induced Strain Degradation of AlGaN/GaN HEMTs on a Nanometer Scale." Appl. Phys. Lett. 97, 223502 - 223502.

2009

  • Fang,Z-Q; Claflin,B; Look,D,C; Dong,Y-F; BRILLSON,L, 2009, "Metal contacts on bulk ZnO crystal treated with remote oxygen plasma." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 27, no. 3, 1774-1779 - 1774-1779.

2008

  • Eteshola,Edward; Keener,Matthew,T; Elias,Mark; Shapiro,John; Brillson,Leonard,J; Bhushan,Bharat; Lee,Stephen,Craig, 2008, "Engineering functional protein interfaces for immunologically modified field effect transistor (ImmunoFET) by molecular genetic means." JOURNAL OF THE ROYAL SOCIETY INTERFACE 5, no. 18, 123-127 - 123-127.
  • Doutt,D,R; Zgrabik,C; Mosbacker,H,L; BRILLSON,L,J, 2008, "Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26, no. 4, 1477-1482 - 1477-1482.
  • Gupta,Samit; Elias,Mark; Wen,Xuejin; Shapiro,John; Brillson,Leonard; Lu,Wu; Lee,Stephen,Craig, 2008, "Detection of clinically relevant levels of protein analyte under physiologic buffer using planar field effect transistors." BIOSENSORS & BIOELECTRONICS 24, no. 4, 505-511 - 505-511.
  • L.J. Brillson, 2008, "Surface and Near-Surface Passivation, Chemical Reaction, and Schottky Barrier Formation at ZnO Surfaces and Interfaces." Appl. Surf. Sci. 254, 8000-8004 - 8000-8004.

2007

  • P.E. Smith, M. Lueck, S.A. Ringel, and L.J. Brillson, 2007, "Atomic Diffusion and Interface Electronic Structure at Al0.52In0.48P/GaAs Heterojunctions." J. Vac. Sci. Technol. B25, 1916-1921 - 1916-1921.
  • L.J. Brillson, 2007, "Interface Bonding, Chemical Reactions, and Defect Formation at Metal-Semiconductor Interfaces." J. Vac. Sci. Technol. 25, 943-949 - 943-949.
  • Gao,Min; BRILLSON,L,J, 2007, "Application of high spatial resolution scanning work function spectroscopy to semiconductor surfaces and interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B B25, no. 2, 334-342 - 334-342.

2006

  • M. Gao, S.T. Bradley, Y. Cao, D. Jena, Y. Lin, S.A. Ringel, J. Hwang, W.J. Schaff, and L.J. Brillson, 2006, "Composition modulation and optical emission in AlGaN epitaxial films." J. Appl. Phys. 100, 103512 - 103512.

2005

  • Eteshola,E; BRILLSON,L,J; Lee,S,C, 2005, "Selection and characteristics of peptides that bind thermally grown silicon dioxide films." Biomolecular Engineering 22, no. 5-6, 201-204 - 201-204.
  • S. C. Lee, M. T. Keener, D. R. Tokachichu, B.Bhushan, P. D. Barnes, B. R. Cipriany, M. Gao, and L. J. Brillson, 2005, "Protein Binding on Thermally Grown Silicon Dioxide." Virtual J. Biolog. Phys. 10, 4 - 4.
  • Lee,S,C; Keener,M,T; Tokachichu,D,R; BHUSHAN,B; Barnes,P,D; Cipriany,B,R; Gao,M; BRILLSON,L,J, 2005, "Protein binding on thermally grown silicon dioxide." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B B23, no. 5, 1856-1865 - 1856-1865.
  • Smith,P,E; Goss,S,H; Gao,M; Hudait,M,K; Lin,Y; Ringel,S,A; BRILLSON,L,J, 2005, "Atomic diffusion and band lineups at In0.53Ga0.47As-on-InP heterointerfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23, no. 4, 1832-1837 - 1832-1837.
  • Brillson, Leonard J.; Bradley, Shawn T.; Tumakha, Sergey H.; Goss, Stephen H.; Sun, Xiaoling L.; Okojie, Robert S.; Hwang, J.; Schaff, William J., 2005, "Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces." Applied Surface Science 244, no. 1-4, 257-263 - 257-263.
  • Gao,M; Lin,Y; Bradley,S,T; Ringel,S,A; Hwang,J; Schaff,W,J; BRILLSON,L,J, 2005, "Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1-xN epilayers." APPLIED PHYSICS LETTERS 87, no. 19, 191905 - 191905.
  • Hudait,M,K; Lin,Y; Goss,S,H; Smith,P; Bradley,S; BRILLSON,L,J; Johnston,S,W; Ahrenkiel,R,K; Ringel,S,A, 2005, "Evidence of interface-induced persistent photoconductivity in InP/In0.53Ga0.47As/InP double heterostructures grown by molecular-beam epitaxy." Applied Physics Letters 87, no. 3, 032106 - 032106.

2004

  • L.J. Brillson, S. Tumakha, R. Okojie, and P. Pirouz, 2004, "Electron-Excited Luminescence Spectroscopy of SiC Surfaces and Interfaces." J. Phys.- Condensed Matter 16, S1733-S1754 - S1733-S1754.
  • Smith,P,E; Goss,S,H; Bradley,S,T; Hudait,M,K; Lin,Y; Ringel,S,A; BRILLSON,L,J, 2004, "Atomic layer diffusion and electronic structure at In0.53Ga0.47As/InP interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B B22, no. 2, 554-559 - 554-559.

2003

  • White, B. D.; Bataiev, M.; Goss, S. H.; Hu, X.; Karmarkar, A.; Fleetwood, D. M.; Schrimpf, R. D.; Schaff, W. J.; Brillson, L. J., 2003, "Electrical, Spectral, and Chemical Properties of 1.8 MeV Proton Irradiated AlGaN/GaN HEMT Structures as a Function of Proton Fluence." IEEE Transactions on Nuclear Science 50, no. 6 I,
  • G.H. Jessen, R.C. Fitch, J. K. Gillespie, G.D. Via, B.D. White, S.T. Bradley, D.E. Walker Jr., and L.J. Brillson, 2003, "The Effects of Deep Level Defects on Ohmic Contact and Frequency Performance of AlGaN/GaN HEMTs." Appl. Phys. Lett. 83, 485-487 - 485-487.
  • Brillson, Leonard J., 2003, "Electronic materials and processing: 1979-2003." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21, no. 5 SUPPL.,
  • A. Rockett, J.T. Heath, J.D.Cohen, Y.M. Strzhemechny, L.J. Brillson, K.Ramanathan, W.N. Shafarman, and D.X. Liao, 2003, "Near-Surface Defect Distributions in Cu(In,Ga)Se2." Thin Solid Films 431-432, 301-306 - 301-306.
  • Hu, Xinwen; Karmarkar, Aditya P.; Jun, Bongim; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Geil, Robert D.; Weller, Robert A.; White, Brad D.; Bataiev, Mykola; Brillson, Leonard J.; Mishra, Umesh K., 2003, "Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors." IEEE Transactions on Nuclear Science 50, no. 6 I,

2002

  • Y.M. Strzhemechny, P.E. Smith, S.T. Bradley, L.J. Brillson, D.X. Liao, A.A. Rockett, and K. Ramanathan, 2002, "Near-Surface Electronic Defect and Morphology of CuIn1-xGaxSe2." J. Vac. Sci. Technol. B20, 2441-2448 - 2441-2448.
  • Look,D,C; Jones,R,L; Sun,X,L; BRILLSON,L,J; Ager,J,W; Park,S,S; Han,J,H; Molnar,R,M; Maslar,J,E, 2002, "Electrical and optical properties of GaN/Al2O3 interfaces." JOURNAL OF PHYSICS-CONDENSED MATTER 14, no. 48, 13337-13344 - 13337-13344.
  • Brillson,L,J; Tumakha,S; Jessen,G,H; Okojie,R,S; Zhang,M; Pirouz,P, 2002, "Thermal and doping dependence of 4H-SiC polytype transformation." APPLIED PHYSICS LETTERS 81, no. 15, 2785-2787 - 2785-2787.
  • L.J. Brillson, S.T. Bradley, S. H. Goss, X. Sun, M.J. Murphy, W.J. Schaff, L.F. Eastman, D.C. Look, R.J. Molnar, F.A Ponce, N. Ikeo, and Y. Sakai, 2002, "Low Energy Excited Nano-Luminescence Studies of GaN and Related Materials." Appl. Surf. Sci. 190, 498-507 - 498-507.
  • Brillson, L. J.; Bradley, S. T.; Goss, S. H.; Sun, X.; Murphy, M. J.; Schaff, W. J.; Eastman, L. F.; Look, D. C.; Molnar, R. J.; Ponce, F. A.; Ikeo, N.; Sakai, Y., 2002, "Low-energy electron-excited nanoluminescence studies of GaN and related materials." Applied Surface Science 190, no. 1-4,
  • Okojie, Robert S.; Lukco, Dorothy; Keys, Luann; Tumakha, Sergey; Brillson, Leonard J., 2002, "Surface morphology and chemistry of 4H- and 6H-SiC after cyclic oxidation." Materials Science Forum 389-393, no. 2, 1101-1103 - 1101-1103.
  • White, B. D.; Bataiev, M.; Brillson, L. J.; Choi, B. K.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.; Dettmer, R. W.; Schaff, W. J.; Champlain, J. G.; Mishra, U. K., 2002, "Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy." IEEE Transactions on Nuclear Science 49 I, no. 6,

2001

  • S.T. Bradley, A.P. Young, L.J. Brillson, M.J. Murphy, W.J. Schaff, and L.F. Eastman, 2001, "Influence of AlGaN Deep Level Defects on AlGaN/GaN 2DEG Carrier Confinement." IEEE Trans. Electron. Dev. 48, 412-415 - 412-415.
  • S.H. Goss, L.J. Brillson, and S.S.K. Parkin, 2001, "Analysis of Tunneling Magnetoresistance Structures by Low Energy Electron Nanoscale Luminescence Spectroscopy." J. Vac. Sci. Technol. A19, 1199-1202 - 1199-1202.
  • R.S. Okojie, D. Lukco, L. J. Brillson S. Tumakha, G. Jessen, M. Zhang and P. Pirouz, 2001, "Direct Observation of Oxidation-Induced 4H-SiC – 3C-SiC Polytypic Transformation." Appl. Phys. Lett. 79, 3056-3058 - 3056-3058.
  • Brillson, L. J.; Young, A. P.; Jessen, G. H.; Levin, T. M.; Bradley, S. T.; Goss, S. H.; Bae, J.; Ponce, F. A.; Murphy, M. J.; Schaff, W. J.; Eastman, L. F., 2001, "Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces." Applied Surface Science 175-176, 442-449 - 442-449.
  • BRILLSON,L,J, 2001, "Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 19, no. 5, 1762-1768 - 1762-1768.

2000

  • Brillson, L.J.; Young, A.P.; White, B.D.; Schafer, J.; Niimi, H.; Lee, Y.M.; Lucovsky, G., 2000, "Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO$-2$//Si interfaces." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18, no. 3,
  • White, B. D.; Brillson, L. J.; Lee, S. C.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.; Lee, Y. -M.; Lucovsky, G., 2000, "Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation." IEEE Transactions on Nuclear Science 47, no. 6 III,
  • BRILLSON,L,J; Young,A,P; White,B,D; Schafer,J; Niimi,H; Lee,Y,M; Lucovsky,G, 2000, "Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18, no. 3, 1737-1741 - 1737-1741.
  • Brillson, L.J.; Young, A.P.; Levin, T.M.; Jessen, G.H.; Schafer, J.; Yang, Y.; Xu, S.H.; Cruguel, H.; Lapeyre, G.J.; Ponce, F.A.; Naoi, Y.; Tu, C.; McKenzie, J.D.; Abernathy, C.R., 2000, "Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces." Journal of Materials Science and Engineering 75, no. 2, 218 - 218.
  • S. T. Bradley, A. P. Young, L.J. Brillson, M.J. Murphy, and W.J. Schaff, 2000, "Role of Barrier and Buffer Layer Defect States in AlGaN/GaN 2DEG HEMT Structures." J. Electron. Mater. 30, 123-128 - 123-128.
  • A.P.Young, S.H.Goss, L.J. Brillson, J.D.MacKenzie, and C.R.Abernathy, 2000, "Near – Surface Cathodoluminescence Spectroscopy of Erbium – Doped AlN." J. Electron. Mater. 29, 311-316 - 311-316.
  • A.P.Young, J.Bae, L.J. Brillson, M.J.Murphy, and W.J.Schaff, 2000, "Depth-Resolved Spectroscopy of Interface Defects in AlGaN/GaN HFET Device Structures." J. Vac. Sci. Technol. B18, 2309-2312 - 2309-2312.

1999

  • A.P.Young, J. Schäfer, L.J.Brillson, Y.Yang, S.H.Cruguel, G.J.Lapeyre, M. A. L. Johnson and J.F.Schetzina, 1999, "Electronic Near-Surface Defect States of Bare and Metal Covered n-GaN Observed by Cathodoluminescence Spectroscopy." J. Electron. Mater. 28, 308 - 308.
  • Brillson, L.J.; Young, A.P.; Schafer, J.; Niimi, H.; Lucovsky, G., 1999, "Ultrathin silicon oxide and nitride-silicon interface states." Materials Research Society Symposium - Proceedings 567,
  • Levin,T,M; Jessen,G,H; Ponce,F,A; BRILLSON,L,J, 1999, "Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 17, no. 6, 2545-2552 - 2545-2552.
  • Hierro,A; Kwon,D; Goss,S,H; BRILLSON,L,J; Ringel,S,A; Rubini,S; Pelucchi,E; Franciosi,A, 1999, "Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy." APPLIED PHYSICS LETTERS 75, no. 6, 832-834 - 832-834.
  • L.J.Brillson, A.P.Young, T. Levin, G. Jessen, C. Tu,Y.Naoi, F.Ponce, G.J.Lapeyre, Y.Yang, C.Abernathy, and D.McKenzie, 1999, "Defect Formation at GaN Surfaces and Interfaces." Physica B 273-274, 70-74 - 70-74.
  • J. Schäfer, A. P. Young, T. M. Levin, L.J. Brillson, L. Vanzetti, A. Bonanni, and A. Franciosi, 1999, "Cathodoluminescence Spectroscopy of Deep Defect Levels at the ZnSe/GaAs Interface with a Controlled Interfacial Layer." J. Electron. Mater 28, 881 - 881.

1995

  • A.D. Raisanen, L.J. Brillson, L. Vanzetti, L. Sorba, and A. Franciosi, 1995, "Deep Level Interface States Near "Buried" ZnSe/GaAs(100) Heterointerfaces." J. Vac. Sci. Technol. A13, 690 - 690.
  • Raisanen, A.; Brillson, L. J.; Vanzetti, L.; Sorba, L.; Franciosi, A., 1995, "Deep levels near 'buried' ZnSe/GaAs(100) heterointerfaces." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13, no. 3 pt 1,
  • BRILLSON,L,J; Chang,S; RAISANEN,A,D; VITOMIROV,I,M, 1995, "Luminescence spectroscopy of semiconductor surfaces and interfaces." LUMINESCENE N/A, 173-182 - 173-182.
  • A.D. Raisanen, L.J. Brillson, A. Franciosi, R. Nicolini, L. Vanzetti, G. Mula, G. Bratina, and L. Sorba, 1995, "Deep Level Electronic Structure of ZnSe/GaAs Heterojunctions." J. Electron. Mater. 24, 163 - 163.

1994

  • A. D. Raisanen, L.J. Brillson, R. S. Goldman, K. L. Kavanaugh, and H. H. Wieder, 1994, "Dislocation-Induced Deep Levels in In0.08Ga0.92As Heterostructures." J. Electron. Mater. 9, 929 - 929.
  • A. Raisanen, L.J. Brillson, R. S. Goldman, K. L. Kavanagh, and H. H. Wieder, 1994, "Strain-Induced Deep Levels in InxGa1-xAs Thin Films." J. Vac. Sci. Technol. A12, 1050 - 1050.

1993

  • BRILLSON,L, 1993, "THE CHEMICAL-DEPENDENCE OF METAL-SEMICONDUCTOR CONTACTS - A CITATION-CLASSIC COMMENTARY ON THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES BY BRILLSON,L.J.." CURRENT CONTENTS/PHYSICAL CHEMICAL & EARTH SCIENCES 42, 8-8 - 8-8.
  • I. M. Vitomirov, A. D. Raisanen, L.J. Brillson, C.L. Lin, D. T. McInturff, P. D. Kirchner, and J. M. Woodall, 1993, "Temperature-Dependent Composition, Ordering, and Deep Levels at MBE-Grown GaP(100) Surfaces." J. Vac. Sci. Technol A11, 841 - 841.
  • I. M. Vitomirov, A. D. Raisanen, L.J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, 1993, "Effect of Semiconductor Growth Method and Bulk Doping on Fermi Level Stabilization for Al and Au Contacts on n- and p-GaAs(100)." J. Electron. Mater. 22, 111 - 111.

1992

  • S. Chang, I. M. Vitomirov, C. Mailhiot, L.J. Brillson, D. S. Rioux, Y. J. Kime, P.D. Kirchner, D. Pettit, and J. M. Woodall, 1992, "Electronic and Chemical Structure of Al and Au Interfaces with Vicinal GaAs (100) Surfaces." Phys. Rev. B45, 13438 - 13438.
  • I. M. Vitomirov, A. D. Raisanen, L.J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, 1992, "Impact of Processing on Al/GaAs(100) Interface States." Solid State Commun. 84, 61 - 61.
  • S. Chang, J. L. Shaw, L.J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, 1992, "Inhomogeneous and Wide Range of Schottky Barrier Formation at Metal / GaAs(100) Interfaces Observed with Electrical Measurements." J. Vac. Sci. Technol B10, 1932 - 1932.

1991

  • S. Chang, L.J.Brillson, D. S. Rioux, P.D. Kirchner D. Pettit, and J. M. Woodall, 1991, "Correlation of Interfacial Chemistry, Barrier Height, and Step Density for Al on GaAs (100) Vicinal Surfaces." J. Vac. Sci. Technol. A9, 902 - 902.
  • S. Chang, L.J. Brillson, D. S. Rioux, S. Kirchner, D. Pettit, and J. M. Woodall, 1991, "Electrically-Active Steps at Vicinal Metal / GaAs (100) Interfaces." Phys. Rev. B, Rapid Commun. B44, 1391 - 1391.

1990

  • Brillson, L. J.; Chang, S.; Shaw, J.; Viturro, R. E., 1990, "Interface states at metal-compound semiconductor junctions." Vacuum 41, no. 4-6 Pt2,

1989

  • L.J. Brillson, 1989, "Metal Semiconductor Contacts: Electronic Structure of the Interface." Comments on Condensed Matter Physics 14, 311-342 - 311-342.
  • R. E. Viturro, S. Chang, J. L. Shaw, C. Mailhiot, L.J. Brillson, R. Zanoni, Y. Hwu, G. Margaritondo, P. D. Kirchner, and J. M. Woodall, 1989, "Soft X-Ray Photoemission and Cathodoluminescence Spectroscopies of Metals on MBE-GaAs(100) Surfaces: Approaching the Ideal Chemical and Electronic Limits." J. Vac. Sci. Technol. B7, 1007 - 1007.

1988

  • BRILLSON,L,J; VITURRO,R,E, 1988, "LOW-ENERGY CATHODOLUMINESCENCE SPECTROSCOPY OF SEMICONDUCTOR INTERFACES." SCANNING MICROSCOPY 2, no. 2, 789-799 - 789-799.
  • P.Chiaradia, L.J. Brillson, M. Fanfoni, P. De Padova, P. Nataletti, R. E. Viturro, M. L. Slade, G. Margaritondo, M. K. Kelly, D. Kilday, and N.Tache, 1988, "Initial Stages of GaP (110) Oxidation." Solid State Commun. 67, 647 - 647.
  • BRILLSON,L,J; VITURRO,R,E; Shaw,J,L; RICHTER,H,W, 1988, "CATHODOLUMINESCENCE SPECTROSCOPY OF METAL-SEMICONDUCTOR INTERFACE STRUCTURES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 6, no. 3, 1437-1445 - 1437-1445.
  • R. E. Viturro, J. L. Shaw, and L.J. Brillson, 1988, "Observation of Arsenic- and Metal-Induced GaAs Interface States by Low Energy Cathodoluminescence Spectroscopy." J. Vac. Sci. Technol. B6, 1397 - 1397.

1986

  • R. E. Viturro, M. L. Slade and L.J. Brillson, 1986, "Optical Emission Properties of Metal/III-V Compound Semiconductor Interface States." Phys. Rev. Lett. 57, 487 - 487.
  • BRILLSON,L,J, 1986, "PROMOTING AND CHARACTERIZING NEW CHEMICAL-STRUCTURE AT METAL-SEMICONDUCTOR INTERFACES." Surface Science 168, no. 1-3, 260-274 - 260-274.
  • C.F. Brucker, L.J. Brillson, and Y. Shapira, 1986, "UPS, XPS and AES Studies of CaF2-CdSe." Thin Solid Films 135, 203 - 203.
  • Allara, David L.; Brillson, Leonard J.; Brusic, Vlasta; Buckley, Donald H.; Chelikowsky, James R.; Clark, William A. T.; Clarke, David R.; Ferrante, John; Fowkes, Fred M.; Gottschall, Robert J.; Grant, Ron W.; McMahon, Charles J. Jr.; Margaritondo, Giorgio; Mattox, Donald M.; Noolandi, Jaan, 1986, "PANEL REPORT ON INTERFACIAL BONDING AND ADHESION.." Materials Science and Engineering 83, no. 2,

1985

  • BRILLSON,L,J, 1985, "ADVANCES IN CHARACTERIZING AND CONTROLLING METAL-SEMICONDUCTOR INTERFACES." Applications of Surface Science 22-3, no. MAY, 948-968 - 948-968.

1984

  • BRILLSON,L,J, 1984, "SOFT-X-RAY PHOTOEMISSION TECHNIQUES FOR CHARACTERIZING METAL-SEMICONDUCTOR INTERFACES." PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS 447, 89-101 - 89-101.
  • H. Richter, L.J. Brillson, R. Daniels, M. Kelly, and G. Margaritondo, 1984, "Control and Characterization of Metal-InP and GaAs Interfaces Formed by Laser-Enhanced Reactions." J. Vac. Sci. Technol. B2, 591 - 591.

1983

  • BRILLSON,L,J; BRUCKER,C,F; KATNANI,A,D; STOFFEL,N,G; Daniels,R; Margaritondo,G, 1983, "SYSTEMATICS OF CHEMICAL-STRUCTURE AND SCHOTTKY BARRIERS AT COMPOUND SEMICONDUCTOR METAL INTERFACES." SURFACE SCIENCE 132, no. 1-3, 212-232 - 212-232.
  • L.J. Brillson, 1983, "Advances in Understanding Metal - Semiconductor Interfaces by Ultrahigh Vacuum Techniques." International Journal of the Physics and Chemistry of Solids 44, 703 - 703.
  • Brillson, L. J., 1983, "CONTACT TECHNOLOGY IN 3-5 DEVICE ANALYSIS AND MODIFICATION OF METAL-SEMICONDUCTOR CONTACT INTERFACES IN 3-5 DEVICES.." Technical Digest - International Electron Devices Meeting

1982

  • BRILLSON,L,J, 1982, "INTERFACE CHEMICAL-REACTION AND DIFFUSION OF THIN METAL-FILMS ON SEMICONDUCTORS." Thin Solid Films 89, no. 4, 461-469 - 461-469.
  • BRILLSON,L,J, 1982, "CHEMICAL AND ELECTRONIC-STRUCTURE OF COMPOUND SEMICONDUCTOR-METAL INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 20, no. 3, 652-658 - 652-658.
  • Brucker, C. F.; Brillson, L. J., 1982, "ROLE OF CATION DISSOCIATION IN SCHOTTKY BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR-METAL INTERFACES.." Materials Research Society Symposia Proceedings 10,
  • N.G. Stoffel, R.R. Daniels, G. Margaritondo, C.F. Brucker, and L.J. Brillson, 1982, "CdS-Cu Interface Formation: A Microscopic Study of the Interdiffusion and Chemical Processes." J. Vac. Sci. Technol. 20, 701 - 701.
  • Brillson, L. J.; Brucker, C. F.; Stoffel, N. G.; Katnani, A.; Daniels, R.; Margaritondo, G., 1982, "PHOTOEMISSION STUDIES OF REACTIVE DIFFUSION AND LOCALIZED DOPING AT 11-VI COMPOUND SEMICONDUCTOR-METAL INTERFACES.." Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics 117-118, no. Pt II,
  • L.J. Brillson, 1982, "Surface Photovoltage Measurements and Fermi Level Pinning." Thin Solid Films 89, L27 - L27.

1981

  • L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, and G. Margaritondo, 1981, "Atomic and Electrical Structure of InP-Metal Interfaces: A Prototypical III-V Compound Semiconductor." J. Vac. Sci. Technol. 19, 661 - 661.
  • L.J. Brillson and C. F. Brucker, 1981, "Reactive Interdiffusion and Electronic Barriers at Metal-CdS and Metal-CdSe Interfaces." J. Vac. Sci. Technol. 19, 617 - 617.
  • L.J. Brillson, A. Kahn, J. Carelli, D. Katnani, C. B. Duke, and A. Paton, 1981, "The Atomic Geometry of Al-GaAs Interfaces: GaAs (110)-p (1x1)-Al (), 0." J. Vac. Sci. Technol. 19, 331 - 331.
  • L.J. Brillson and C. F. Brucker, 1981, "Reactive Interdiffusion at Metal-CdS and Metal-CdSe Interfaces." J. Vac. Sci. Technol. 18, 787 - 787.
  • Kahn,A; Kanani,D; CARELLI,J; Yeh,J,L; Duke,C,B; Meyer,R,J; Paton,A; BRILLSON,L, 1981, "LEED INTENSITY ANALYSIS OF THE STRUCTURE OF AL ON GAAS(110)." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 18, no. 3, 792-796 - 792-796.
  • A. Kahn,L.J. Brillson, G. Margaritondo, and A. D. Katnani, 1981, "Soft X-ray Photoemission Study of Annealed Al Layers on GaAs(110)." Solid State Commun 38, 1269 - 1269.

1980

  • L.J. Brillson, R.S. Bauer, R.Z. Bachrach, and J.C. McMenamin, 1980, "Bonding and Diffusion at Au and Al Interfaces with CdS." J. Vac. Sci. Technol. 17, 476 - 476.
  • L.J. Brillson, C.F. Brucker, G. Margaritondo, J. Slowik, and N.G. Stoffel, 1980, "Photoemission Studies of Atomic Redistribution at Compound Semiconductor Interfaces." J. Phys. Soc. Japan N/A, 1089 - 1089.
  • L.J. Brillson, G. Margaritondo, N.G. Stoffel, R.S. Bauer, R.Z. Bachrach, and G. Hansson, 1980, "Measurement and Modulation of Interdiffusion by Atomic Layers at Au-GaAs Interfaces." J. Vac. Sci. Technol. 17, 880 - 880.

1978

  • BRILLSON,L,J, 1978, "CHEMICAL-REACTION AND CHARGE REDISTRIBUTION AT METAL-SEMICONDUCTOR INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 15, no. 4, 1378-1383 - 1378-1383.

1974

  • BRILLSON,L,J; Conwell,E,M, 1974, "OPTICAL GUIDED WAVES IN CDSXSE1-X DIFFUSED LAYERS." JOURNAL OF APPLIED PHYSICS 45, no. 12, 5289-5293 - 5289-5293.
  • SHAND,M,L; Burstein,E; BRILLSON,L,J, 1974, "RAMAN INVESTIGATION OF FERROELECTRICITY IN IV-VI SEMICONDUCTORS." FERROELECTRICS 7, no. 1-4, 283-285 - 283-285.

1971

  • L.J. Brillson, E. Burstein, A.A. Maradudin and T. Starke, 1971, "Frequencies of the Long Wavelength Optical Vibration Modes of Graphite." J. Phys. Chem. Solids N/A, 187 - 187.
  • BRILLSON,L; Burstein,E, 1971, "SURFACE ELECTRIC-FIELD-INDUCED RAMAN SCATTERING IN PBTE AND SNTE." PHYSICAL REVIEW LETTERS 27, no. 12, 808 - 808.
  • Pinczuk,A; BRILLSON,L; Burstein,E; ANASTASS,E, 1971, "RESONANT LIGHT SCATTERING BY SINGLE-PARTICLE ELECTRONIC EXCITATIONS IN GAAS." PHYSICAL REVIEW LETTERS 27, no. 6, 317 - 317.

Presentations

  • "Microscopic Characterization of Schottky Barrier Formation." 1979, Presented at Upstate New York Chapter of the American Vacuum Society,
  • "The Physics and Chemistry of Schottky Barriers." 1980, Presented at Rochester Condensed Matter Symposium,
  • "Contact Technology in 3-5 Devices Analysis and Modification of Metal-Semiconductor Contact Interface in 3-5 Devices." 1983, Presented at IEEE International Electron Devices Meeting,
  • "Metal-Semiconductor Interface Characterization and Control." 1985, Presented at Arizona Chapter, American Vacuum Society,
  • "Characterization of Metal-Semiconductor Interfaces by Surface Science Techniques." 1986, Presented at Upstate New York Chapter meeting of the American Vacuum Society,
  • "Tailoring Metal-Semiconductor Interfaces." 1986, Presented at European Materials Research Society,
  • "Surface Science Characterization of Metal-Semiconductor Interfaces." 1987, Presented at American Vacuum Society Ohio Chapter Meeting,
  • "Interface Chemical Bonding and Diffusion on an Atomic Scale at Metal-Semiconductor Interfaces." 1987, Presented at American Physical Society Meeting,
  • "Schottky Barriers- Still a Moving Target, Texas Chapter." 1988, Presented at American Vacuum Society,
  • "Atomic Redistribution and Electronic Structure at Metal-Semiconductor Interfaces." 1981, Presented at Electronic Materials Conference,
  • "Soft X-Ray Photoemission Studies of Metal-Semiconductor Interfaces." 1981, Presented at Soft X-Ray Photoemission Studies of Metal-Semiconductor Interfaces,
  • "Chemical Reactions and Interdiffusion at III-V Compound Semiconductor-Metal Interfaces." 1985, Presented at Materials Research Society,
  • "Chemical Interactions Between Metals and Semiconductors." 1986, Presented at International Workshop of Electrolytes and Metal Interfaces with Semiconductors,
  • "Metallization of III-V Compounds." 1986, Presented at Northeast Regional AIME/MRS Meeting on Semiconductor-Based Heterostructures: Interfacial Structure and Stability,
  • "Physics and Chemistry of Metal - Semiconductor Interfaces." 1987, Presented at Electrochemical Society Meeting,
  • "Atomic Scale Characterization and Processing of Semiconductor Surfaces and Interfaces." 1987, Presented at North Coast Ohio Chapter Symposium of the American Vacuum Society,
  • "Electronic Structure of Metal - Semiconductor Interfaces." 1987, Presented at Mexican National Vacuum Society Meeting,
  • "Surface and Interface Analysis of Microelectronic Materials Processing and Growth." 1990, Presented at SPIE,
  • "Deep Level Luminescence Spectroscopy of Semiconductor Heterojunctions." 1995, Presented at Materials Research Society 1995 Fall Meeting,
  • "Changing Roles of Materials Researchers in Industry, Plenary Lecture." 1996, Presented at Inaugural Israeli Materials Research Union,
  • "Atomic-Scale Control of Electronic and Chemical Structure of Heterojunctions." 1997, Presented at NSF Advancing Frontiers of Condensed Matter Science Symposium,
  • ""Buried” Si-SiO2 Interface States." 1999, Presented at American Physical Society Centennial March Meeting,
  • "Low Energy Cathodoluminescence Spectroscopy of Wide Band Gap Semiconductors." 1999, Presented at International Union of Materials Research Societies (IUMRS) Meeting,
  • "Localized States and Charge Transfer at ZnO Surfaces and Interfaces." 2006, Presented at American Physical Society March Meeting 2006,
  • "Overview of Recent Advances in Spectroscopy of Electronic Materials Surfaces and Interfaces." 2006, Presented at 2006 May Conference (Society for Applied Spectroscopy-Cleveland Section),
  • "Electronic Properties of Native Point Defects at ZnO Surfaces and Interfaces." 2011, Presented at Swiss Physical Society,
  • "Characterization of Schottky Barriers Applied to III-V Compounds." 1988, Presented at International Conference on Materials and Process Characterization for VLSI,
  • "Progress in Understanding and Controlling Metal-Semiconductor Interfaces." 1989, Presented at Industry-University Advanced Materials Conference,
  • "Metal-Semiconductor Interface Reactions and Schottky Barriers." 1990, Presented at Third Electronic & Processing Congress, ASM International,
  • "Metal Work Function Dominated Contacts to GaAs." 1990, Presented at Electrochemical Society Meeting,
  • "Defects and Doping at GaN/Sapphire Interfaces." 2000, Presented at International Specialist Meeting on Bulk Nitride Growth and Related Techniques,
  • "Low Energy Electron Excited Nanoscale Luminescence Spectroscopy of Defects at Buried Interfaces and Ultrathin Films." 2001, Presented at Twenty-Eighth Physics and Chemistry of Semiconductor Interfaces (PSCI) Conference,
  • "Controlling Schottky Barriers and Ohmic Contacts by Sub-Surface Processing." 2008, Presented at SPIE International Symposium on Integrated Optoelectronic Devices 2007,
  • "Defects and Interfaces – A New Look." 2008, Presented at Gordon Research Conference on Defects in Semiconductors,
  • "ZnO Polarity, Interface Defects and Schottky Barrier Formation." 2009, Presented at 2009 Fall Materials Research Society Meeting,
  • "Spectroscopy of Native Point Defects at ZnO Surfaces and Interfaces." 2012, Presented at Gordon Research Conference on Defects in Semiconductors,
  • "Native Point Defect Energies, Densities, and Electrostatic Repulsion Across MgZnO Alloys." 2014, Presented at Transparent Conducting Oxides – Fundamentals and Applications Meeting,
  • "Native Defect Formation and Interface Segregation in ZnO, (Mg,Zn)O and Complex Oxides." 2014, Presented at Materials Research Society Meeting,
  • "Localized Electronic States Near GaN Surfaces and Interfaces." 1999, Presented at 47th Annual Solid State Conference & Solid State Theory Symposium,
  • "Changing Roles of Researchers in Industry." 2000, Presented at American Physical Society Meeting,
  • "Schottky Barrier and Ohmic Contact Control by Sub-Surface Processing." 2007, Presented at SPIE Photonics West,
  • "Controlling Schottky Barriers and Doping with Native Point Defects." 2011, Presented at AVS Science and Technology Society,
  • "Electronic Contacts for Optoelectronics." 1991, Presented at Second International Meeting, Advances in Processing and Characterization Technologies,
  • "Photoemission and Low Energy Cathodoluminescence Spectroscopy Studies of Metal - Semiconductor Interfaces." 1992, Presented at Sixth International Conference on Solid Films and Surfaces,
  • "Microcathodoluminescence Characterization of III-V Nitride Heterojunctions and Devices." 2003, Presented at Electrochemical Society Meeting,
  • "Silicon Carbide Studied Via LEEN and Cathodoluminescence Spectroscopy." 2003, Presented at 10th International Conference on Silicon Carbide and Related Materials,
  • "Localized Defect States, Impurities, and Doping in AlxGa1-xN Epilayers." 2003, Presented at 50th International AVS Symposium,
  • "The Electronic Properties of Native Point Defects at ZnO Surfaces and Interfaces." 2011, Presented at American Physical Society Meeting,
  • "Native Point Defects at ZnO Surfaces, Interfaces, and Bulk Films." 2011, Presented at 16th International Semiconducting and Insulating Materials Conference,
  • "Control of Native Point Defects in Complex Oxides by Electromechanical Forces." 2014, Presented at Electronic Materials Nanotechnology Summer Meeting,
  • "Progress in Understanding Metal-Semiconductor Interfaces by Surface Science Techniques." 1984, Presented at The 1984 International Chemical Congress of Pacific Basin Societies,
  • "Understanding and Controlling Metal-Semiconductor Interfaces." 1989, Presented at Symposium on Semiconductor Interfaces and Heterojunctions,
  • "Deep Level Spectroscopy of Heterojunction Interfaces." 1997, Presented at 14th North Coast Symposium, American Vacuum Society - Ohio Chapter,
  • "Native Defects and Schottky Barrier Formation at Metal-ZnO Interfaces." 2006, Presented at Fall 2006 Materials Research Society Meeting,
  • "The Role of Defects at Nanoscale Semiconductor Interfaces." 2005, Presented at AVS 52nd International Symposium,
  • "Surface Electronic Structure of Metals and Other Adsorbates on CdS and CdSe." 1976, Presented at Upstate New York Chapter, American Vacuum Society,
  • "Atomic Redistribution at Metal III-V Compound Semiconductor Interfaces." 1980, Presented at Materials Research Society Conference,
  • "Metal/Semiconductor Interdiffusion." 1981, Presented at Solid State Physics Conference of the British Institute of Physics,
  • "Atomic Redistribution at Compound Semiconductor-Metal Interfaces." 1981, Presented at American Physical Society Meeting,
  • "The Physics and Chemistry of Metal-Semiconductor Interfaces." 1981, Presented at North Central Chapter of the American Vacuum Society,
  • "Interaction of Metals with Semiconductor Surfaces, Plenary Lecture." 1981, Presented at Second International Conference on Solid Films and Surfaces,

Papers in Proceedings

2012

  • Brillson,Leonard,J; Dong,Y; Tuomisto,F; Svensson,B,G; Kuznetsov,A,Yu; Doutt,D; Mosbacker,H,L; Cantwell,G; Zhang,J; Song,J,J; Fang,Z-Q; Look,D,C "Native point defects at ZnO surfaces, interfaces and bulk films." in 16th International Semiconducting and Insulating Materials Conference (SIMC-XVI). (1 2012).

2010

  • T. R. Nicholson III, S. Gupta, X. Wen, H.-H. Wu, A. Ramish, P. Casal, K. J. Kwak, B. Bhushan, P. R. Berger, W. Lu, L. J. Brillson, Stephen Craig Lee "Rational enhancement of nanobio-technological device function illustrated by partial optimization of a protein sensing field effect transistor." (1 2010).

2009

  • Fang,Z-Q; Claflin,B; Look,D,C; Dong,Y-F; BRILLSON,L "Metal contacts on bulk ZnO crystal treated with remote oxygen plasma." in 1st International Conference on Nanomanufacturing/4th International Conference on Technological Advances of Thin Films and Surface Coatings. (5 2009).
  • Brillson,L,J; Dong,Y; Doutt,D; Look,D,C; Fang,Z-Q "Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation." in 25th International Conference on Defects in Semiconductors. (12 2009).
  • Brillson,L,J; Mosbacker,H,L; Doutt,D,L; Dong,Y; Fang,Z-Q; Look,D,C; Cantwell,G; Zhang,J; Song,J,J "Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces." in 9th International Workshop on Beam Injection Assessment of Microstructure in Semiconductors. (4 2009).

2007

  • E. Eteshola, M.T. Keener, D.R. Tokachichu, B.R. Cipriany, M. Gao, P.D. Barnes, L.J. Brillson, B. Bhushan and S.C. Lee "Engineering Biointerfaces for Distance Dependent Nano/Micro-scale Sensor Devices." (1 2007).

2006

  • Gao,M; Tumakha,S,P; Onishi,T; Tsukimoto,S; Murakami,M; BRILLSON,L,J "Characterization of Ti/Al ohmic contacts to p-type 4H-SiC using cathodoluminescence and Auger electron spectroscopies." in International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). (1 2006).

2005

  • Brillson,L,J; Bradley,S,T; Tumakha,S,H; Goss,S,H; Sun,X,LL; Okojie,R,S; Hwang,J; Schaff,W,J "Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces." in 12th International Conference on Solid Films and Surfaces (ICSFS-12). (5 2005).

2003

  • L.J. Brillson "Microcathodoluminescence Characterization of III-V Nitride Heterojunctions and Devices." (1 2003).

2002

  • Okojie,R,S; Xhang,M; Pirouz,P; Tumakha,S; Jessen,G; BRILLSON,L,J "4H-to 3C-SiC polytypic transformation during oxidation." in International Conference on Silicon Carbide and Related Materials. (1 2002).
  • B.D. White, M. Bataiev, L.J. Brillson, B.K. Choi, D.M. Fleetwood, R.D. Schrimpf, S.T. Pantelides, R.W. Dettmer, and U.K. Mishra "Characterization of Proton Irradiated AlGaN/GaN Modulation Doped Field-Effect Transistor Structures by Low Energy Electron-Excited Nanoscale Luminescence." (12 2002).

2000

  • White,B,D; Brillson,L,J; Lee,S,C; Fleetwood,D,M; Schrimpf,R,D; Pantelides,S,T; Lee,Y,M; Lucovsky,G "Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation." in IEEE Nuclear and Space Radiation Effects Conference (NSREC). (12 2000).

1999

  • Hierro,A; Kwon,D; Ringel,S,A; BRILLSON,L,J; Young,A,P; Franciosi,A "Deep level characterization of interface-engineered ZnSe layers grown by molecular beam epitaxy on GaAs." in Symposium D on Integration of Dissimilar Materials in Micro- and Optoelectronics / Symposium I on III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications, at the 1998 MRS Fall Meeting. (1 1999).
  • BRILLSON,L,J; Young,A,P; Schafer,J; Niimi,H; Lucovsky,G "Ultrathin silicon oxide and nitride - Silicon interface states." in Symposium on Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, at the 1999 MRS Spring Meeting. (1 1999).

1998

  • J. Schäfer, A.P.Young, L.J. Brillson, H. Niimi, and G. Lucovsky "Characterization of the Interface Between Plasma-Oxidized SiO2 and Crystalline Silicon by Cathodoluminescence Spectroscopy (CLS)." (1 1998).
  • J. Schäfer, A. P. Young, L.J. Brillson, G. Lucovsky, and H. Niimi "Defect Characterization of Ultrathin Plasma-Deposited Silicon Dioxide by Cathodoluminescence Spectroscopy." (1 1998).
  • Young,A,P; Aptowitz,K; BRILLSON,L,J "Cathodoluminescence deep level spectroscopy of etched and in-situ annealed 6H-SiC." in Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature. (1 1998).
  • Young,A,P; Schafer,J; Jessen,G,H; Bandhu,R; BRILLSON,L,J; Lucovsky,G; Niimi,H "Luminescence measurements of sub-oxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces." in International Conference on Characterization and Metrology for ULSI Technology. (1 1998).

1995

  • Eklund,E,A; WAYMAN,W,H; BRILLSON,L,J; Hays,D,A "Toner adhesion: The effect of neighboring particles." in 9th International Conference on Electrostatics. (1 1995).

1994

  • GOLDMAN,R,S; Rammohan,K; RAISANEN,A; Goorsky,M; BRILLSON,L,J; RICH,D,H; Wieder,H,H; Kavanagh,K,L "ANISOTROPIC STRUCTURAL AND ELECTRONIC-PROPERTIES OF INGAAS/GAAS HETEROJUNCTIONS." in Symposium on Compound Semiconductor Epitaxy. (1 1994).
  • P. M. Fauchet, C. Peng, L. Tsybeskov, J. Vandyshev, A. Dubois, A. Raisanen, L.J. Brillson, T.E.Orlowski, J. Fouquet, S.L. Dexheimer, J. M. Rehn, G.L. McLendon, E. Ettedgui, Y. Gao, F. Seiferth, and S.K. Kurinec "Intense Room Temperature Light Emission in Porous Silicon: From Less than 450 nm to Beyond 1.5 um." (1 1994).

1993

  • Fauchet,P,M; Ettedgui,E; RAISANEN,A; BRILLSON,L,J; Seiferth,F; Kurinec,S,K; Gao,Y; Peng,C; Tsybeskov,L "CAN OXIDATION AND OTHER TREATMENTS HELP US UNDERSTAND THE NATURE OF LIGHT-EMITTING POROUS SILICON." in SYMP ON SILICON-BASED OPTOELECTRONIC MATERIALS, AT THE 1993 SPRING MEETING OF THE MATERIALS-RESEARCH-SOC. (1 1993).

1992

  • BRILLSON,L,J; VITOMIROV,I,M; RAISANEN,A; Chang,S; VITURRO,R,E; KIRCHNER,P,D; PETTIT,G,D; WOODALL,J,M "PROCESS-DEPENDENT ELECTRONIC-STRUCTURE AT METALLIZED GAAS CONTACTS." in SYMP ON ADVANCED METALLIZATION AND PROCESSING FOR SEMICONDUCTOR DEVICES AND CIRCUITS - 2. (1 1992).
  • L.J. Brillson "Photoemission of Interfaces: A Link Between Fundamental Research and Industrial Applications." (1 1992).

1991

  • BRILLSON,L,J "ADVANCES IN CONTROLLING ELECTRICAL CONTACTS FOR OPTOELECTRONICS." in CONF ON FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC CIRCUITS. (1 1991).

1990

  • BRILLSON,L,J; Chang,S; VITOMIROV,I; KIRCHNER,P,D; PETTIT,G,D; WOODALL,J,M "ORIENTATION-DEPENDENT CHEMISTRY AND SCHOTTKY-BARRIER FORMATION AT METAL-GAAS INTERFACES." in 20TH INTERNATIONAL CONF ON THE PHYSICS OF SEMICONDUCTORS. (1 1990).
  • BRILLSON,L,J; Chang,S; Shaw,J; VITURRO,R,E "INTERFACE STATES AT METAL COMPOUND SEMICONDUCTOR JUNCTIONS." in 11TH INTERNATIONAL VACUUM CONGRESS ( IVC-11 ) / 7TH INTERNATIONAL CONF ON SOLID SURFACES ( ICSS-7 ). (1 1990).
  • L.J. Brillson and Fred H. Pollak "Surface and Interface Analysis of Microelectronic Materials Processing and Growth." (1 1990).

1989

  • L.J. Brillson "Deep Levels and Band Bending at Metal-Semiconductor Interfaces." (1 1989).
  • L.J. Brillson "Progress in Understanding and Controlling Metal-Semiconductor Interfaces." (1 1989).
  • BRILLSON,L,J; VITURRO,R,E; Chang,S; Shaw,J,L; Mailhiot,C; Zanoni,R; Hwu,Y; Margaritondo,G; KIRCHNER,P; WOODALL,J,M "NEW ELECTRONIC-PROPERTIES OF METAL/III-V COMPOUND SEMICONDUCTOR INTERFACES." in SYMP AT THE 1989 SPRING MEETING OF THE MATERIALS RESEARCH SOC : CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES. (1 1989).

1988

  • R. E. Viturro, J. L. Shaw, C. Mailhiot, and L.J. Brillson "Interface State Formation and Band Bending at Metal-GaAs Interfaces." (1 1988).

1987

  • R. E. Viturro, M. L. Slade, and L.J. Brillson "Cathodoluminescence Spectroscopy of Metal/III-V Compound Semiconductor Interface States." (1 1987).
  • P. Chiaradia, L.J. Brillson,M. Fanfoni, P. DePadova, P. Nataletti, R. E. Viturro, M. L. Slade, G. Margaritondo, M. K. Kelly, D. Kilday, and N. Tache "Unpinned Schottky Barrier in GaP (110)." (1 1987).

1986

  • L.J. Brillson "Chemical Reaction and Interdiffusion at III-V Compound Semiconductor-Metal Interfaces." (1 1986).

1985

  • L.J. Brillson "Metal-Semiconductor Interface Studies by Synchrotron Radiation Techniques." (1 1985).

1983

  • L.J. Brillson "Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces." (1 1983).

1980

  • L.J. Brillson, C.F. Brucker, G. Margaritondo, J. Slowik, and N.G. Stoffel "Photoemission Studies of Atomic Redistribution at Compound Semiconductor Interfaces." (1 1980).
  • G. Margaritondo, N. G. Stoffel, and L.J. Brillson "Role of Surface Photovoltaic Effect in Photoemission Spectroscopy." (1 1980).
  • L.J. Brillson, J. Wysocki and F. Luo "Field Effect Spectroscopy of Semiconductor-Insulator Interface States Using Thin Film Transistor Structures." (1 1980).
  • L.J. Brillson, R.S. Bauer and R.Z. Bachrach "Chemical Bonding at Metal/Si02/Si (111) Interfaces." (1 1980).

1976

  • L.J. Brillson "Metal-Induced Surface States on CdS and CdSe." (1 1976).

1972

  • L.J. Brillson and E. Burstein "Raman Scattering by LO Phonons in Crossed Electric and Magnetic Fields." (1 1972).

1971

  • L.J. Brillson and E. Burstein "Surface Electric Field-Induced Raman Scattering in the Cubic IV-VI Compound Semiconductors." (1 1971).
  • L.J. Brillson, E. Burstein, A.A. Maradudin and T. Starke "Frequencies of the Long Wavelength Optical Vibration Modes of Graphite." (1 1971).
  • L.J. Brillson, A. Pinczuk, E. Burstein and E. Anastassaki "Resonant Raman Scattering by Electron Gas and Lattice Excitations at the Eo+Δo Gap on n-GaAs." (1 1971).

Patents

  • L. J. Brillson, S. Silence. "Patterned Conducting Elements for Development Subsystems." Patent number: U.S. Patent No. 5,643,706
  • Brillson,Leonard,J; Silence,Scott,M; Duggan,Michael,J; Kazakos,Ann,M. "Process for preparing electroconductive members." Patent number: 5643706
  • Brillson,Leonard,J. "Multi-Color Photosensitive Element with Heterojunctions." Patent number: 5138416