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Leonard Brillson

  • Professor and CMR Scholar, Electrical & Computer Engr.
  • Professor & CMR Scholar, Physics
  • 2015 Neil Ave, 205 Dreese Lab
    2176 Physics Research Bldg
    Columbus, OH 43210
  • 614-292-8015

About

Education

Ph.D. 1972, University of Pennsylvania

Areas of interest

Electronic materials, semiconductor heterojunction and metal contacts, nanoelectronics, optoelectronics, surface science, defects in crystalline semiconductors, materials characterization and processing.

Office

387 Caldwell Laboratory

Honors

  • 2006

    Gaede-Langmuir Award.

  • 2002

    AAAS Fellow.

Books

2010

  • L.J. Brillson. 2010. "Surfaces and Interfaces of Electronic Materials." Wiley-VCH.

Edited Books

1993

  • N/A. 1993. "Contacts to Semiconductors: Fundamentals and Technology." Noyes Press.

1986

  • N/A. 1986. "Proceedings of the Topical Conference on Frontiers in Electronic Materials." American Institute of Physics.

Chapters

2013

  • 2013. "Surfaces and Interfaces of Zinc Oxide."
  • J. Qiu, E. Katz, C.-H. Lin, L. Cao, and L.J. Brillson. 2013. "The effect of thermal reactor neutron irradiation on semi-insulating GaN,â€� Radiation Effects & Defects." In Radiation Effects & Defects in Solids: Incorporating Plasma Science and Plasma Technology,

2011

  • L.J. Brillson. 2011. "Surface Properties and Electrical Contacts on ZnO." In ZnO Materials for Electronic and Optoelectronic Device Applications, edited by C.W. Litton, D.C.Litton, and T.C. Collins, 87-112 - 87-112.

1994

  • 1994. "PROSPECTS FOR LIGHT-EMITTING-DIODES MADE OF POROUS SILICON FROM THE BLUE TO BEYOND 1.5 MU-M."

1993

  • L.J. Brillson. 1993. "Interface States." In Contacts to Semiconductors, Fundamentals and Technology, edited by L.J. Brillson, 333-413 - 333-413.

1992

  • L.J. Brillson. 1992. "Surfaces and Interfaces: Atomic-Scale Structure, Band Bending and Band Offsets." In Handbook on Semiconductors, edited by P. T. Landsberg, 281-417 - 281-417.
  • L.J. Brillson. 1992. "Schottky Barriers." In Concise Encyclopedia of Electronic and Optoelectronic Materials, edited by L. C. Kimerling, 409 - 409.
  • L.J. Brillson. 1992. "Schottky Barrier Contacts for Compound Semiconductors." In Encyclopedia of Advanced Materials, edited by S. Mahajan and L.C. Kimerling, 409-412 - 409-412.

1988

  • L.J. Brillson. 1988. "Characterization of Schottky Barriers Applied to III-V Compounds." In Materials and Process Characterization for VLSI, edited by X.-F. Zong, Y.-Y. Wang, and J. Chen, 239-241 - 239-241.
  • L.J. Brillson. 1988. "Adsorption and Schottky Barrier Formation on Compound Semiconductor Surfaces." In Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, edited by D. A. King and D. P. Woodruff, 119-181 - 119-181.

1986

  • L.J. Brillson. 1986. "Metallization of III-V Compounds." In Semiconductor- Based Heterostructures: Interfacial Structure and Stability, edited by J.E.E.Baglin, G.Y.Chin, H. W. Deckman, W. Mayo, and D. Narasinham, 387-395 - 387-395.

Journal Articles

2015

  • 2015, "Native point defect energies, densities, and electrostatic repulsion across (Mg, Zn)O alloys." PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 212, no. 7,

2014

  • 2014, "Optical identification of oxygen vacancy formation at SrTiO3-(Ba,Sr)TiO3 heterostructures." JOURNAL OF PHYSICS D-APPLIED PHYSICS 47, no. 25,
  • Katz,Evan,J; Lin,Chung-Han; Qiu,Jie; Zhang,Zhichun; Mishra,Umesh,K; Cao,Lei; Brillson,Leonard,J, 2014, "Neutron irradiation effects on metal-gallium nitride contacts." JOURNAL OF APPLIED PHYSICS 115, no. 12, 123705 - 123705.

2013

  • 2013, "Interplay of dopants and native point defects in ZnO." PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 250, no. 10,
  • 2013, "Effect of reduced dimensionality on the optical band gap of SrTiO3." APPLIED PHYSICS LETTERS 102, no. 12,
  • 2013, "Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO." APPLIED PHYSICS LETTERS 103, no. 7,
  • Lin,Chung-Han; Katz,Evan,J; Qiu,Jie; Zhang,Zhichun; Mishra,Umesh,K; Cao,Lei; Brillson,Leonard,J, 2013, "Neutron irradiation effects on gallium nitride-based Schottky diodes." APPLIED PHYSICS LETTERS 103, no. 16, 162106 - 162106.
  • 2013, "Process dependence of H passivation and doping in H-implanted ZnO." JOURNAL OF PHYSICS D-APPLIED PHYSICS 46, no. 5,
  • 2013, "Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system." REVIEW OF SCIENTIFIC INSTRUMENTS 84, no. 6,
  • 2013, "Role of native point defects and Ga diffusion on electrical properties of degenerate Ga-doped ZnO." PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 250, no. 10,
  • 2013, "Depth resolved studies of SrTiO3 defects using x-ray excited optical luminescence and cathodoluminescence." APPLIED PHYSICS LETTERS 102, no. 19,
  • 2013, "Heterojunction band offsets and dipole formation at BaTiO3/SrTiO3 interfaces." JOURNAL OF APPLIED PHYSICS 114, no. 18,
  • 2013, "Electronic Structure of Tantalum Oxynitride Perovskite Photocatalysts." CHEMISTRY OF MATERIALS 25, no. 16,

2012

  • E.J. Katz, H.L. Hughes, M.E. Twigg, B.J. Mrstik, G. Lucovsky, and L.J. Brillson, 2012, "Electrical and Nanoscale Depth Resolved Properties of Plasma Deposited Silicon- Rich SiOx Oxides for Radiation Tolerant Electronics." J. Radiation Effects, Research and Engineering 30, no. 1, 133 - 133.
  • 2012, "Interplay of native point defects with ZnO Schottky barriers and doping." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 30, no. 5,
  • 2012, "Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale." IEEE TRANSACTIONS ON ELECTRON DEVICES 59, no. 10,
  • 2012, "Control of Li configuration and electrical properties of Li-doped ZnO." JOURNAL OF PHYSICS D-APPLIED PHYSICS 45, no. 37,
  • Lin,Chung-Han; Merz,Tyler,A; Doutt,Daniel,R; Joh,Jungwoo; Del Alamo,Jesus,A; Mishra,Umesh,K; Brillson,Leonard,J, 2012, "Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale." IEEE TRANSACTIONS ON ELECTRON DEVICES 59, no. 10, 2667-2674 - 2667-2674.
  • 2012, "Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO." APPLIED PHYSICS LETTERS 100, no. 4,
  • Brillson,Leonard,J; Dong,Yufeng; Tuomisto,Filip; Svensson,Bengt,G; Kuznetsov,Andrei,Yu; Doutt,Daniel; Mosbacker,H,Lee; Cantwell,Gene; Zhang,Jizhi; Song,Jin,Joo; Fang,Z-Q; Look,David,C, 2012, "Interplay of native point defects with ZnO Schottky barriers and doping." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 30, no. 5, 050801 - 050801.
  • 2012, "Applications of depth-resolved cathodoluminescence spectroscopy." JOURNAL OF PHYSICS D-APPLIED PHYSICS 45, no. 18,

2011

  • 2011, "Impact of ultrathin Al2O3 diffusion barriers on defects in high-k LaLuO3 on Si." APPLIED PHYSICS LETTERS 98, no. 17,
  • 2011, "Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices." APPLIED PHYSICS LETTERS 98, no. 12,
  • 2011, "Nanostructure growth-induced defect formation and band bending at ZnO surfaces." SURFACE SCIENCE 605, no. 9-10,
  • 2011, "ZnO Schottky barriers and Ohmic contacts." JOURNAL OF APPLIED PHYSICS 109, no. 12,
  • Wen,Xuejin; Gupta,Samit; Nicholson,Theodore,R; Lee,Stephen,C; Lu,Wu, 2011, "AlGaN/GaN HFET biosensors working at subthreshold regime for sensitivity enhancement." PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 8, no. 7-8, 2489-2491 - 2489-2491.
  • 2011, "Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO." PHYSICAL REVIEW B 84, no. 11,
  • Gupta,Samit,K; Wu,Hao-Hsuan; Kwak,Kwang,J; Casal,Patricia; Nicholson,Theodore,R; Wen,Xuejin; Anisha,R; Bhushan,Bharat; Berger,Paul,R; Lu,Wu; Brillson,Leonard,J; Lee,Stephen,Craig, 2011, "Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces." JOURNAL OF PHYSICS D-APPLIED PHYSICS 44, no. 3, 034010 - 034010.
  • 2011, "Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 29, no. 1,

2010

  • 2010, "Defects at oxygen plasma cleaned ZnO polar surfaces." JOURNAL OF APPLIED PHYSICS 108, no. 10,
  • 2010, "X-ray photoemission spectroscopy of Sr2FeMoO6 film stoichiometry and valence state." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 28, no. 5,
  • Tadjer,Marko,J; Feygelson,Tatyana,I; Hobart,Karl,D; Caldwell,Joshua,D; Anderson,Travis,J; Butler,James,E; Eddy,Charles,R; Gaskill,D,Kurt; Lew,K,K; VanMil,Brenda,L; Myers-Ward,Rachael,L; Kub,Fritz,J; Sollenberger,Gregory; Brillson,Leonard, 2010, "On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC." APPLIED PHYSICS LETTERS 97, no. 19, 193510 - 193510.
  • C-H. Lin, D.R. Doutt, U.K. Mishra, T.A. Merz, and L.J. Brillson, 2010, "Field-Induced Strain Degradation of AlGaN/GaN HEMTs on a Nanometer Scale." Appl. Phys. Lett. 97, 223502 - 223502.
  • 2010, "Vacancy defect and defect cluster energetics in ion-implanted ZnO." PHYSICAL REVIEW B 81, no. 8,
  • T. R. Nicholson III, S. Gupta, X. Wen, H.-H. Wu, A. Ramish, P. Casal, K. J. Kwak, B. Bhushan, P. R. Berger, W. Lu, L. J. Brillson, Stephen Craig Lee, 2010, "Rational enhancement of nanobio-technological device function illustrated by partial optimization of a protein sensing field effect transistor." J. Nanoengineering and Nanosystems 223, 149-161 - 149-161.

2009

  • Fang,Z-Q; Claflin,B; Look,D,C; Dong,Y-F; BRILLSON,L, 2009, "Metal contacts on bulk ZnO crystal treated with remote oxygen plasma." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 27, no. 3, 1774-1779 - 1774-1779.
  • 2009, "Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces." SUPERLATTICES AND MICROSTRUCTURES 45, no. 4-5,
  • 2009, "Surface, bulk, and interface electronic states of epitaxial BiFeO3 films." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 27, no. 4,
  • 2009, "Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors." APPLIED PHYSICS LETTERS 95, no. 3,
  • 2009, "Impact of near-surface defects and morphology on ZnO luminescence." APPLIED PHYSICS LETTERS 94, no. 4,
  • 2009, "Polarity-related asymetry at ZnO surfaces and metal interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 27, no. 3,
  • 2009, "Depth-resolved subsurface defects in chemically etched SrTiO3." APPLIED PHYSICS LETTERS 94, no. 9,

2008

  • 2008, "Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26, no. 1,
  • Doutt,D,R; Zgrabik,C; Mosbacker,H,L; BRILLSON,L,J, 2008, "Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26, no. 4, 1477-1482 - 1477-1482.
  • 2008, "Atomic diffusion and interface electronic structure at In0.49Ga0.51P/GaAs heterojunctions." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26, no. 1,
  • 2008, "Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26, no. 4,
  • 2008, "Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26, no. 4,
  • 2008, "Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy." JOURNAL OF APPLIED PHYSICS 104, no. 6,
  • Gupta,Samit; Elias,Mark; Wen,Xuejin; Shapiro,John; Brillson,Leonard; Lu,Wu; Lee,Stephen,Craig, 2008, "Detection of clinically relevant levels of protein analyte under physiologic buffer using planar field effect transistors." BIOSENSORS & BIOELECTRONICS 24, no. 4, 505-511 - 505-511.
  • L.J. Brillson, 2008, "Surface and Near-Surface Passivation, Chemical Reaction, and Schottky Barrier Formation at ZnO Surfaces and Interfaces." Appl. Surf. Sci. 254, 8000-8004 - 8000-8004.
  • 2008, "Zn- and O-face polarity effects at ZnO surfaces and metal interfaces." APPLIED PHYSICS LETTERS 93, no. 7,
  • 2008, "First-principles studies of metal (111)/ZnO{0001} interfaces." JOURNAL OF ELECTRONIC MATERIALS 37, no. 5,
  • Eteshola,Edward; Keener,Matthew,T; Elias,Mark; Shapiro,John; Brillson,Leonard,J; Bhushan,Bharat; Lee,Stephen,Craig, 2008, "Engineering functional protein interfaces for immunologically modified field effect transistor (ImmunoFET) by molecular genetic means." JOURNAL OF THE ROYAL SOCIETY INTERFACE 5, no. 18, 123-127 - 123-127.
  • 2008, "Characterization of electronic structure and defect states of thin epitaxial BiFeO(3) films by UV-visible absorption and cathodoluminescence spectroscopies." APPLIED PHYSICS LETTERS 92, no. 22,

2007

  • P.E. Smith, M. Lueck, S.A. Ringel, and L.J. Brillson, 2007, "Atomic Diffusion and Interface Electronic Structure at Al0.52In0.48P/GaAs Heterojunctions." J. Vac. Sci. Technol. B25, 1916-1921 - 1916-1921.
  • 2007, "Atomic diffusion and electronic structure in Al0.52In0.48P/GaAs heterostructures." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 25, no. 6,
  • 2007, "Role of subsurface defects in metal-ZnO(0001) Schottky barrier formation." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 25, no. 4,
  • 2007, "Thermally driven defect formation and blocking layers at metal-ZnO interfaces." APPLIED PHYSICS LETTERS 91, no. 7,
  • L.J. Brillson, 2007, "Interface Bonding, Chemical Reactions, and Defect Formation at Metal-Semiconductor Interfaces." J. Vac. Sci. Technol. 25, 943-949 - 943-949.
  • 2007, "Role of interface layers and localized states in TiAl-based ohmic contacts to p-type 4H-SiC." JOURNAL OF ELECTRONIC MATERIALS 36, no. 4,
  • Gao,Min; BRILLSON,L,J, 2007, "Application of high spatial resolution scanning work function spectroscopy to semiconductor surfaces and interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B B25, no. 2, 334-342 - 334-342.
  • 2007, "Inhomogeneities in Ni/4H-SiC Schottky barriers: Localized fermi-level pinning by defect states." JOURNAL OF APPLIED PHYSICS 101, no. 11,
  • 2007, "Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures." APPLIED PHYSICS LETTERS 90, no. 5,
  • 2007, "Dominant effect of near-interface native point defects on ZnO Schottky barriers." APPLIED PHYSICS LETTERS 90, no. 10,
  • 2007, "Application of high spatial resolution scanning work function spectroscopy to semiconductor surfaces and interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 25, no. 2,

2006

  • M. Gao, S.T. Bradley, Y. Cao, D. Jena, Y. Lin, S.A. Ringel, J. Hwang, W.J. Schaff, and L.J. Brillson, 2006, "Composition modulation and optical emission in AlGaN epitaxial films." J. Appl. Phys. 100, 103512 - 103512.
  • 2006, "Schottky barrier formation at nonpolar Au/GaN epilayer interfaces." JOURNAL OF ELECTRONIC MATERIALS 35, no. 4,
  • 2006, "Controlled gate surface processing of AlGaN/GaN high electron mobility transistors." APPLIED PHYSICS LETTERS 89, no. 18,
  • 2006, "On microscopic compositional and electrostatic properties of grain boundaries in polycrystalline CuIn1-xGaxSe2." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 24, no. 4,
  • 2006, "A study of inhomogeneous Schottky diodes on n-type 4H-SiC." Silicon Carbide and Related Materials 2005, Pts 1 and 2 527-529,

2005

  • 2005, "Pre-metallization processing effects on Schottky contacts to AlGaN/GaN heterostructures." JOURNAL OF APPLIED PHYSICS 97, no. 8,
  • 2005, "Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO." APPLIED PHYSICS LETTERS 87, no. 1,
  • Brillson, Leonard J.; Bradley, Shawn T.; Tumakha, Sergey H.; Goss, Stephen H.; Sun, Xiaoling L.; Okojie, Robert S.; Hwang, J.; Schaff, William J., 2005, "Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces." Applied Surface Science 244, no. 1-4, 257-263 - 257-263.
  • 2005, "Electronic defect states at annealed metal/4H-SiC interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23, no. 2,
  • 2005, "Defect-driven inhomogeneities in Ni/4H-SiC Schottky barriers." APPLIED PHYSICS LETTERS 87, no. 24,
  • Smith,P,E; Goss,S,H; Gao,M; Hudait,M,K; Lin,Y; Ringel,S,A; BRILLSON,L,J, 2005, "Atomic diffusion and band lineups at In0.53Ga0.47As-on-InP heterointerfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23, no. 4, 1832-1837 - 1832-1837.
  • Hudait,M,K; Lin,Y; Goss,S,H; Smith,P; Bradley,S; BRILLSON,L,J; Johnston,S,W; Ahrenkiel,R,K; Ringel,S,A, 2005, "Evidence of interface-induced persistent photoconductivity in InP/In0.53Ga0.47As/InP double heterostructures grown by molecular-beam epitaxy." Applied Physics Letters 87, no. 3, 032106 - 032106.
  • 2005, "Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries." APPLIED PHYSICS LETTERS 86, no. 16,
  • Gao,M; Lin,Y; Bradley,S,T; Ringel,S,A; Hwang,J; Schaff,W,J; BRILLSON,L,J, 2005, "Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1-xN epilayers." APPLIED PHYSICS LETTERS 87, no. 19, 191905 - 191905.
  • S. C. Lee, M. T. Keener, D. R. Tokachichu, B.Bhushan, P. D. Barnes, B. R. Cipriany, M. Gao, and L. J. Brillson, 2005, "Protein Binding on Thermally Grown Silicon Dioxide." Virtual J. Biolog. Phys. 10, 4 - 4.
  • Lee,S,C; Keener,M,T; Tokachichu,D,R; BHUSHAN,B; Barnes,P,D; Cipriany,B,R; Gao,M; BRILLSON,L,J, 2005, "Protein binding on thermally grown silicon dioxide." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B B23, no. 5, 1856-1865 - 1856-1865.
  • Eteshola,E; BRILLSON,L,J; Lee,S,C, 2005, "Selection and characteristics of peptides that bind thermally grown silicon dioxide films." Biomolecular Engineering 22, no. 5-6, 201-204 - 201-204.
  • 2005, "Shallow donor generation in ZnO by remote hydrogen plasma." JOURNAL OF ELECTRONIC MATERIALS 34, no. 4,
  • 2005, "Effects of surface conduction on Hall-effect measurements in ZnO." SUPERLATTICES AND MICROSTRUCTURES 38, no. 4-6,

2004

  • Smith,P,E; Goss,S,H; Bradley,S,T; Hudait,M,K; Lin,Y; Ringel,S,A; BRILLSON,L,J, 2004, "Atomic layer diffusion and electronic structure at In0.53Ga0.47As/InP interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B B22, no. 2, 554-559 - 554-559.
  • 2004, "Origins of luminescence from nitrogen-ion-implanted epitaxial GaAs." APPLIED PHYSICS LETTERS 85, no. 14,
  • 2004, "Remote hydrogen plasma doping of single crystal ZnO." APPLIED PHYSICS LETTERS 84, no. 14,
  • L.J. Brillson, S. Tumakha, R. Okojie, and P. Pirouz, 2004, "Electron-Excited Luminescence Spectroscopy of SiC Surfaces and Interfaces." J. Phys.- Condensed Matter 16, S1733-S1754 - S1733-S1754.
  • 2004, "Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 22, no. 6,
  • 2004, "Surface cleaning and annealing effects on Ni/AlGaN interface atomic composition and Schottky barrier height." APPLIED PHYSICS LETTERS 85, no. 8,
  • 2004, "Electron-excited luminescence of SiC surfaces and interfaces." JOURNAL OF PHYSICS-CONDENSED MATTER 16, no. 17,

2003

  • Hu, Xinwen; Karmarkar, Aditya P.; Jun, Bongim; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Geil, Robert D.; Weller, Robert A.; White, Brad D.; Bataiev, Mykola; Brillson, Leonard J.; Mishra, Umesh K., 2003, "Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors." IEEE Transactions on Nuclear Science 50, no. 6 I,
  • G.H. Jessen, R.C. Fitch, J. K. Gillespie, G.D. Via, B.D. White, S.T. Bradley, D.E. Walker Jr., and L.J. Brillson, 2003, "The Effects of Deep Level Defects on Ohmic Contact and Frequency Performance of AlGaN/GaN HEMTs." Appl. Phys. Lett. 83, 485-487 - 485-487.
  • 2003, "Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors." APPLIED PHYSICS LETTERS 83, no. 3,
  • 2003, "Remote hydrogen plasma processing of ZnO single crystal surfaces." JOURNAL OF APPLIED PHYSICS 94, no. 7,
  • 2003, "Effect of remote hydrogen plasma treatment on ZnO single crystal surfaces." PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS 744,
  • Brillson, Leonard J., 2003, "Electronic materials and processing: 1979-2003." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21, no. 5 SUPPL.,
  • 2003, "Electronic materials and processing: 1979-2003." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 21, no. 5,
  • A. Rockett, J.T. Heath, J.D.Cohen, Y.M. Strzhemechny, L.J. Brillson, K.Ramanathan, W.N. Shafarman, and D.X. Liao, 2003, "Near-Surface Defect Distributions in Cu(In,Ga)Se2." Thin Solid Films 431-432, 301-306 - 301-306.
  • White, B. D.; Bataiev, M.; Goss, S. H.; Hu, X.; Karmarkar, A.; Fleetwood, D. M.; Schrimpf, R. D.; Schaff, W. J.; Brillson, L. J., 2003, "Electrical, Spectral, and Chemical Properties of 1.8 MeV Proton Irradiated AlGaN/GaN HEMT Structures as a Function of Proton Fluence." IEEE Transactions on Nuclear Science 50, no. 6 I,
  • 2003, "Deep level defects and doping in high Al mole fraction AlGaN." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 21, no. 6,
  • 2003, "Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN." PHYSICA STATUS SOLIDI B-BASIC RESEARCH 240, no. 2,
  • 2003, "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy." JOURNAL OF APPLIED PHYSICS 94, no. 12,

2002

  • 2002, "Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN." JOURNAL OF APPLIED PHYSICS 92, no. 7,
  • Okojie, Robert S.; Lukco, Dorothy; Keys, Luann; Tumakha, Sergey; Brillson, Leonard J., 2002, "Surface morphology and chemistry of 4H- and 6H-SiC after cyclic oxidation." Materials Science Forum 389-393, no. 2, 1101-1103 - 1101-1103.
  • L.J. Brillson, S.T. Bradley, S. H. Goss, X. Sun, M.J. Murphy, W.J. Schaff, L.F. Eastman, D.C. Look, R.J. Molnar, F.A Ponce, N. Ikeo, and Y. Sakai, 2002, "Low Energy Excited Nano-Luminescence Studies of GaN and Related Materials." Appl. Surf. Sci. 190, 498-507 - 498-507.
  • Y.M. Strzhemechny, P.E. Smith, S.T. Bradley, L.J. Brillson, D.X. Liao, A.A. Rockett, and K. Ramanathan, 2002, "Near-Surface Electronic Defect and Morphology of CuIn1-xGaxSe2." J. Vac. Sci. Technol. B20, 2441-2448 - 2441-2448.
  • 2002, "Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy." APPLIED PHYSICS LETTERS 81, no. 27,
  • 2002, "Detection of trap activation by ionizing radiation in SiO2 by spatially localized cathodoluminescence spectroscopy." JOURNAL OF APPLIED PHYSICS 92, no. 10,
  • Brillson,L,J; Tumakha,S; Jessen,G,H; Okojie,R,S; Zhang,M; Pirouz,P, 2002, "Thermal and doping dependence of 4H-SiC polytype transformation." APPLIED PHYSICS LETTERS 81, no. 15, 2785-2787 - 2785-2787.
  • 2002, "Thermal and doping dependence of 4H-SiC polytype transformation." APPLIED PHYSICS LETTERS 81, no. 15,
  • 2002, "Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 20, no. 2,
  • Okojie, Robert S.; Xhang, Ming; Pirouz, Pirouz; Tumakha, Sergey; Jessen, Gregg; Brillson, Leonard J., 2002, "4H-to 30-SiC polytypic transformation during oxidation." Materials Science Forum 389-393, no. 1,
  • 2002, "Near-surface electronic defects and morphology of CuIn1-xGaxSe2." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 20, no. 6,
  • Brillson, L. J.; Bradley, S. T.; Goss, S. H.; Sun, X.; Murphy, M. J.; Schaff, W. J.; Eastman, L. F.; Look, D. C.; Molnar, R. J.; Ponce, F. A.; Ikeo, N.; Sakai, Y., 2002, "Low-energy electron-excited nanoluminescence studies of GaN and related materials." Applied Surface Science 190, no. 1-4,
  • 2002, "Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy." SOLID-STATE ELECTRONICS 46, no. 9,
  • White, B. D.; Bataiev, M.; Brillson, L. J.; Choi, B. K.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.; Dettmer, R. W.; Schaff, W. J.; Champlain, J. G.; Mishra, U. K., 2002, "Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy." IEEE Transactions on Nuclear Science 49 I, no. 6,
  • 2002, "Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy." JOURNAL OF APPLIED PHYSICS 91, no. 10,
  • Look,D,C; Jones,R,L; Sun,X,L; BRILLSON,L,J; Ager,J,W; Park,S,S; Han,J,H; Molnar,R,M; Maslar,J,E, 2002, "Electrical and optical properties of GaN/Al2O3 interfaces." JOURNAL OF PHYSICS-CONDENSED MATTER 14, no. 48, 13337-13344 - 13337-13344.
  • 2002, "Microcathodoluminescence spectroscopy of defects in Bi2O3-doped ZnO grains." JOURNAL OF APPLIED PHYSICS 92, no. 9,

2001

  • 2001, "Electronic defect states observed by cathodoluminescence spectroscopy at GaN/sapphire interfaces." PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228, no. 2,
  • BRILLSON,L,J, 2001, "Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 19, no. 5, 1762-1768 - 1762-1768.
  • 2001, "Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces." APPLIED PHYSICS LETTERS 78, no. 23,
  • 2001, "Chemical composition, morphology, and deep level electronic states of GaN (0001) (1X1) surfaces prepared by indium decapping." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 19, no. 6,
  • 2001, "Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement." IEEE TRANSACTIONS ON ELECTRON DEVICES 48, no. 3,
  • Goss, S. H.; Young, A. P.; Brillson, L. J.; Look, D. C.; Molnar, R. J., 2001, "Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy." Materials Research Society Symposium - Proceedings 639,
  • R.S. Okojie, D. Lukco, L. J. Brillson S. Tumakha, G. Jessen, M. Zhang and P. Pirouz, 2001, "Direct Observation of Oxidation-Induced 4H-SiC – 3C-SiC Polytypic Transformation." Appl. Phys. Lett. 79, 3056-3058 - 3056-3058.
  • S.H. Goss, L.J. Brillson, and S.S.K. Parkin, 2001, "Analysis of Tunneling Magnetoresistance Structures by Low Energy Electron Nanoscale Luminescence Spectroscopy." J. Vac. Sci. Technol. A19, 1199-1202 - 1199-1202.
  • S.T. Bradley, A.P. Young, L.J. Brillson, M.J. Murphy, W.J. Schaff, and L.F. Eastman, 2001, "Influence of AlGaN Deep Level Defects on AlGaN/GaN 2DEG Carrier Confinement." IEEE Trans. Electron. Dev. 48, 412-415 - 412-415.
  • 2001, "Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures." JOURNAL OF ELECTRONIC MATERIALS 30, no. 3,
  • Brillson, L. J.; Young, A. P.; Jessen, G. H.; Levin, T. M.; Bradley, S. T.; Goss, S. H.; Bae, J.; Ponce, F. A.; Murphy, M. J.; Schaff, W. J.; Eastman, L. F., 2001, "Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces." Applied Surface Science 175-176, 442-449 - 442-449.

2000

  • 2000, "The effect of nitrogen ion damage on the optical and electrical properties of MBE GaN grown on MOCVD GaN/sapphire templates." MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5,
  • Brillson, L.J.; Young, A.P.; White, B.D.; Schafer, J.; Niimi, H.; Lee, Y.M.; Lucovsky, G., 2000, "Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO$-2$//Si interfaces." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 18, no. 3,
  • 2000, "Low energy electron excited nanoscale luminescence spectroscopy of erbium doped AlN." JOURNAL OF ELECTRONIC MATERIALS 29, no. 3,
  • Brillson, L.J.; Young, A.P.; Levin, T.M.; Jessen, G.H.; Schafer, J.; Yang, Y.; Xu, S.H.; Cruguel, H.; Lapeyre, G.J.; Ponce, F.A.; Naoi, Y.; Tu, C.; McKenzie, J.D.; Abernathy, C.R., 2000, "Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces." Journal of Materials Science and Engineering 75, no. 2, 218 - 218.
  • S. T. Bradley, A. P. Young, L.J. Brillson, M.J. Murphy, and W.J. Schaff, 2000, "Role of Barrier and Buffer Layer Defect States in AlGaN/GaN 2DEG HEMT Structures." J. Electron. Mater. 30, 123-128 - 123-128.
  • BRILLSON,L,J; Young,A,P; White,B,D; Schafer,J; Niimi,H; Lee,Y,M; Lucovsky,G, 2000, "Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18, no. 3, 1737-1741 - 1737-1741.
  • White, B. D.; Brillson, L. J.; Lee, S. C.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.; Lee, Y. -M.; Lucovsky, G., 2000, "Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation." IEEE Transactions on Nuclear Science 47, no. 6 III,
  • A.P.Young, J.Bae, L.J. Brillson, M.J.Murphy, and W.J.Schaff, 2000, "Depth-Resolved Spectroscopy of Interface Defects in AlGaN/GaN HFET Device Structures." J. Vac. Sci. Technol. B18, 2309-2312 - 2309-2312.
  • 2000, "Luminescence spectroscopy of GaN in the high-temperature regime from room temperature to 900 degrees C." APPLIED PHYSICS LETTERS 77, no. 5,
  • A.P.Young, S.H.Goss, L.J. Brillson, J.D.MacKenzie, and C.R.Abernathy, 2000, "Near – Surface Cathodoluminescence Spectroscopy of Erbium – Doped AlN." J. Electron. Mater. 29, 311-316 - 311-316.

1999

  • Brillson, L.J.; Young, A.P.; Schafer, J.; Niimi, H.; Lucovsky, G., 1999, "Ultrathin silicon oxide and nitride-silicon interface states." Materials Research Society Symposium - Proceedings 567,
  • 1999, "Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer." JOURNAL OF ELECTRONIC MATERIALS 28, no. 7,
  • L.J.Brillson, A.P.Young, T. Levin, G. Jessen, C. Tu,Y.Naoi, F.Ponce, G.J.Lapeyre, Y.Yang, C.Abernathy, and D.McKenzie, 1999, "Defect Formation at GaN Surfaces and Interfaces." Physica B 273-274, 70-74 - 70-74.
  • Hierro,A; Kwon,D; Goss,S,H; BRILLSON,L,J; Ringel,S,A; Rubini,S; Pelucchi,E; Franciosi,A, 1999, "Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy." APPLIED PHYSICS LETTERS 75, no. 6, 832-834 - 832-834.
  • R. Bandhu, J. Schäfer, A. P. Young, L.J. Brillson, G. Lucovsky, and H. Niimi, 1999, "Cathodoluminescence Spectroscopy of Nitrided Si-SiO2 Interfaces." J. Vac. Sci. Technol. A17, 1258 - 1258.
  • Levin,T,M; Jessen,G,H; Ponce,F,A; BRILLSON,L,J, 1999, "Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 17, no. 6, 2545-2552 - 2545-2552.
  • 1999, "Localized states at InGaN/GaN quantum well interfaces." APPLIED PHYSICS LETTERS 75, no. 24,
  • 1999, "Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 17, no. 6,
  • J. Schäfer, A. P. Young, T. M. Levin, L.J. Brillson, L. Vanzetti, A. Bonanni, and A. Franciosi, 1999, "Cathodoluminescence Spectroscopy of Deep Defect Levels at the ZnSe/GaAs Interface with a Controlled Interfacial Layer." J. Electron. Mater 28, 881 - 881.
  • A.P.Young, J. Schäfer, L.J.Brillson, Y.Yang, S.H.Cruguel, G.J.Lapeyre, M. A. L. Johnson and J.F.Schetzina, 1999, "Electronic Near-Surface Defect States of Bare and Metal Covered n-GaN Observed by Cathodoluminescence Spectroscopy." J. Electron. Mater. 28, 308 - 308.
  • 1999, "Deep level characterization of interface-engineered ZnSe layers grown by molecular beam epitaxy on GaAs." III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS 535,
  • 1999, "Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 17, no. 6,
  • 1999, "Low energy cathodoluminescence spectroscopy of etched 6H-SiC surfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 17, no. 5,

1998

  • 1998, "Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16, no. 4,
  • 1998, "Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO(2) and silicon." APPLIED PHYSICS LETTERS 73, no. 6,
  • 1998, "Deep level formation and heterojunction band offsets at ZnSe/GaAs interfaces." APPLIED SURFACE SCIENCE 123,

1997

  • 1997, "Low energy cathodoluminescence spectroscopy of SiO2 nanoparticles." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 15, no. 3,

1996

  • 1996, "Internal photoinjection and deep level luminescence at ZnSe/GaAs heterointerfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 14, no. 3,
  • 1996, "Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfaces." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 14, no. 4,

1995

  • A.D. Raisanen, L.J. Brillson, L. Vanzetti, L. Sorba, and A. Franciosi, 1995, "Deep Level Interface States Near "Buried" ZnSe/GaAs(100) Heterointerfaces." J. Vac. Sci. Technol. A13, 690 - 690.
  • Raisanen, A.; Brillson, L. J.; Vanzetti, L.; Sorba, L.; Franciosi, A., 1995, "Deep levels near 'buried' ZnSe/GaAs(100) heterointerfaces." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13, no. 3 pt 1,
  • 1995, "DEEP-LEVEL FORMATION AT ZNSE/GAAS(100) INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 13, no. 4,
  • 1995, "ATOMIC DIFFUSION-INDUCED DEEP LEVELS NEAR ZNSE/GAAS(100) INTERFACES." APPLIED PHYSICS LETTERS 66, no. 24,
  • A.D. Raisanen, L.J. Brillson, A. Franciosi, R. Nicolini, L. Vanzetti, G. Mula, G. Bratina, and L. Sorba, 1995, "Deep Level Electronic Structure of ZnSe/GaAs Heterojunctions." J. Electron. Mater. 24, 163 - 163.
  • BRILLSON,L,J; Chang,S; RAISANEN,A,D; VITOMIROV,I,M, 1995, "Luminescence spectroscopy of semiconductor surfaces and interfaces." LUMINESCENE N/A, 173-182 - 173-182.

1994

  • 1994, "METAL-SEMICONDUCTOR INTERFACES." SURFACE SCIENCE 299, no. 1-3,
  • 1994, "DEEP LEVELS AND BAND BENDING AT GAP(100) AND GAP(110) SURFACES." SURFACE SCIENCE 307,
  • 1994, "DISLOCATION-INDUCED DEEP-LEVEL STATES IN IN0.08GA0.92AS/GAAS HETEROSTRUCTURES." JOURNAL OF ELECTRONIC MATERIALS 23, no. 9,
  • 1994, "ANISOTROPIC STRUCTURAL AND ELECTRONIC-PROPERTIES OF INGAAS/GAAS HETEROJUNCTIONS." COMPOUND SEMICONDUCTOR EPITAXY 340,
  • A. Raisanen, L.J. Brillson, R. S. Goldman, K. L. Kavanagh, and H. H. Wieder, 1994, "Strain-Induced Deep Levels in InxGa1-xAs Thin Films." J. Vac. Sci. Technol. A12, 1050 - 1050.
  • L.J. Brillson, 1994, "Metal-Semiconductor Interfaces." Surface Science 299/300, 909 - 909.
  • 1994, "OPTICAL-DETECTION OF MISFIT DISLOCATION-INDUCED DEEP LEVELS AT INGAAS/GAAS HETEROJUNCTIONS." APPLIED PHYSICS LETTERS 64, no. 26,
  • A. D. Raisanen, L.J. Brillson, R. S. Goldman, K. L. Kavanaugh, and H. H. Wieder, 1994, "Dislocation-Induced Deep Levels in In0.08Ga0.92As Heterostructures." J. Electron. Mater. 9, 929 - 929.

1993

  • 1993, "ELECTRONIC-STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES FROM CATHODOLUMINESCENCE AND SOFT-X-RAY PHOTOEMISSION SPECTROSCOPIES." APPLIED SURFACE SCIENCE 65-6,
  • 1993, "PROCESSING AND RECONSTRUCTION EFFECTS ON AL-GAAS(100) BARRIER HEIGHTS." JOURNAL OF ELECTRONIC MATERIALS 22, no. 3,
  • 1993, "CONTROL OF AS DIFFUSION USING ULTRATHIN METAL PASSIVATING LAYERS AT GAAS(100) SURFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 11, no. 4,
  • 1993, "CAN OXIDATION AND OTHER TREATMENTS HELP US UNDERSTAND THE NATURE OF LIGHT-EMITTING POROUS SILICON." SILICON-BASED OPTOELECTRONIC MATERIALS 298,
  • 1993, "EFFECT OF SEMICONDUCTOR GROWTH METHOD AND BULK DOPING ON FERMI LEVEL STABILIZATION FOR ALUMINUM AND GOLD CONTACTS ON N-GAAS(100) AND P-GAAS(100)." JOURNAL OF ELECTRONIC MATERIALS 22, no. 1,
  • BRILLSON,L, 1993, "THE CHEMICAL-DEPENDENCE OF METAL-SEMICONDUCTOR CONTACTS - A CITATION-CLASSIC COMMENTARY ON THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES BY BRILLSON,L.J.." CURRENT CONTENTS/PHYSICAL CHEMICAL & EARTH SCIENCES 42, 8-8 - 8-8.
  • I. M. Vitomirov, A. D. Raisanen, L.J. Brillson, C.L. Lin, D. T. McInturff, P. D. Kirchner, and J. M. Woodall, 1993, "Temperature-Dependent Composition, Ordering, and Deep Levels at MBE-Grown GaP(100) Surfaces." J. Vac. Sci. Technol A11, 841 - 841.
  • I. M. Vitomirov, A. D. Raisanen, L.J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, 1993, "Effect of Semiconductor Growth Method and Bulk Doping on Fermi Level Stabilization for Al and Au Contacts on n- and p-GaAs(100)." J. Electron. Mater. 22, 111 - 111.

1992

  • S. Chang, J. L. Shaw, L.J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, 1992, "Inhomogeneous and Wide Range of Schottky Barrier Formation at Metal / GaAs(100) Interfaces Observed with Electrical Measurements." J. Vac. Sci. Technol B10, 1932 - 1932.
  • 1992, "WSE2-BASED SCHOTTKY JUNCTIONS - THE EFFECT OF POLYIODIDE TREATMENT ON JUNCTION BEHAVIOR." JOURNAL OF APPLIED PHYSICS 71, no. 10,
  • 1992, "SURFACE AND INTERFACE STATES FOR GAAS(100) (1X1) AND (4X2)-C(8X2) RECONSTRUCTIONS." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 10, no. 4,
  • 1992, "GEOMETRIC ORDERING, SURFACE-CHEMISTRY, BAND BENDING, AND WORK FUNCTION AT DECAPPED GAAS(100) SURFACES." PHYSICAL REVIEW B 46, no. 20,
  • 1992, "TEMPERATURE-DEPENDENT CHEMICAL AND ELECTRONIC-STRUCTURE OF RECONSTRUCTED GAAS (100) SURFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 10, no. 4,
  • 1992, "IMPACT OF SURFACE PROCESSING ON AL/GAAS(100) INTERFACE STATES." SOLID STATE COMMUNICATIONS 84, no. 1-2,
  • I. M. Vitomirov, A. D. Raisanen, L.J. Brillson, P. D. Kirchner, G. D. Pettit, and J. M. Woodall, 1992, "Impact of Processing on Al/GaAs(100) Interface States." Solid State Commun. 84, 61 - 61.
  • S. Chang, I. M. Vitomirov, C. Mailhiot, L.J. Brillson, D. S. Rioux, Y. J. Kime, P.D. Kirchner, D. Pettit, and J. M. Woodall, 1992, "Electronic and Chemical Structure of Al and Au Interfaces with Vicinal GaAs (100) Surfaces." Phys. Rev. B45, 13438 - 13438.

1991

  • S. Chang, L.J. Brillson, D. S. Rioux, S. Kirchner, D. Pettit, and J. M. Woodall, 1991, "Electrically-Active Steps at Vicinal Metal / GaAs (100) Interfaces." Phys. Rev. B, Rapid Commun. B44, 1391 - 1391.
  • 1991, "AU INTERFACES WITH EPITAXIALLY GROWN CDTE(111) - CHEMISTRY AND BARRIER HEIGHTS." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 9, no. 3,
  • 1991, "INCREASED RANGE OF FERMI-LEVEL STABILIZATION ENERGY AT METAL MELT-GROWN GAAS(100) INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 9, no. 4,
  • S. Chang, L.J.Brillson, D. S. Rioux, P.D. Kirchner D. Pettit, and J. M. Woodall, 1991, "Correlation of Interfacial Chemistry, Barrier Height, and Step Density for Al on GaAs (100) Vicinal Surfaces." J. Vac. Sci. Technol. A9, 902 - 902.

1990

  • 1990, "CONFIRMATION OF THE TEMPERATURE-DEPENDENT PHOTOVOLTAIC EFFECT ON FERMI-LEVEL MEASUREMENTS BY PHOTOEMISSION SPECTROSCOPY." PHYSICAL REVIEW B 41, no. 17,
  • 1990, "METAL GAAS INTERFACE CHEMICAL AND ELECTRONIC-PROPERTIES - GAAS ORIENTATION DEPENDENCE." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 8, no. 4,
  • Brillson, L. J.; Chang, S.; Shaw, J.; Viturro, R. E., 1990, "Interface states at metal-compound semiconductor junctions." Vacuum 41, no. 4-6 Pt2,
  • 1990, "METAL (100)GAAS INTERFACE - CASE FOR A METAL-INSULATOR-SEMICONDUCTOR-LIKE STRUCTURE." APPLIED PHYSICS LETTERS 56, no. 1,
  • 1990, "TEMPERATURE-DEPENDENT FORMATION OF INTERFACE STATES AND SCHOTTKY BARRIERS AT METAL MOLECULAR-BEAM EPITAXY GAAS(100)JUNCTIONS." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 8, no. 5,
  • 1990, "DEEP LEVEL PHOTOLUMINESCENCE SPECTROSCOPY OF CDTE EPITAXIAL LAYER SURFACES." APPLIED PHYSICS LETTERS 56, no. 13,
  • 1990, "ORIENTATION-DEPENDENT CHEMISTRY AND SCHOTTKY-BARRIER FORMATION AT METAL-GAAS INTERFACES." PHYSICAL REVIEW LETTERS 64, no. 21,

1989

  • 1989, "SCHOTTKY-LIKE BEHAVIOR OF THE GAP(110)/AG INTERFACE." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 7, no. 2,
  • 1989, "INFLUENCE OF DEEP STATES ON CDTE AND GAAS METAL INTERFACE FORMATION." JOURNAL OF ELECTRONIC MATERIALS 18, no. 1,
  • R. E. Viturro, S. Chang, J. L. Shaw, C. Mailhiot, L.J. Brillson, R. Zanoni, Y. Hwu, G. Margaritondo, P. D. Kirchner, and J. M. Woodall, 1989, "Soft X-Ray Photoemission and Cathodoluminescence Spectroscopies of Metals on MBE-GaAs(100) Surfaces: Approaching the Ideal Chemical and Electronic Limits." J. Vac. Sci. Technol. B7, 1007 - 1007.
  • 1989, "FERMI-LEVEL PINNING AND INTRINSIC SURFACE-STATES IN CLEAVED GAP." PHYSICAL REVIEW B 39, no. 8,
  • L.J. Brillson, 1989, "Metal Semiconductor Contacts: Electronic Structure of the Interface." Comments on Condensed Matter Physics 14, 311-342 - 311-342.
  • 1989, "INTERFACE STATES AND SCHOTTKY-BARRIER FORMATION AT METAL-GAAS JUNCTIONS." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 7, no. 3,
  • 1989, "INTERDIFFUSION, INTERFACIAL STATE FORMATION, AND BAND BENDING AT METAL CDTE INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 7, no. 2,

1988

  • 1988, "INTERFACIAL DEEP-LEVEL FORMATION AND ITS EFFECT ON BAND BENDING AT METAL CDTE INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 6, no. 4,
  • 1988, "INFLUENCE OF DEEP STATES ON GAAS-METAL AND CDTE-METAL INTERFACE FORMATION." JOURNAL OF ELECTRONIC MATERIALS 17, no. 4,
  • BRILLSON,L,J; VITURRO,R,E; Shaw,J,L; RICHTER,H,W, 1988, "CATHODOLUMINESCENCE SPECTROSCOPY OF METAL-SEMICONDUCTOR INTERFACE STRUCTURES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 6, no. 3, 1437-1445 - 1437-1445.
  • BRILLSON,L,J; VITURRO,R,E, 1988, "LOW-ENERGY CATHODOLUMINESCENCE SPECTROSCOPY OF SEMICONDUCTOR INTERFACES." SCANNING MICROSCOPY 2, no. 2, 789-799 - 789-799.
  • 1988, "INITIAL-STAGES OF GAP(1 1 0) OXIDATION." SOLID STATE COMMUNICATIONS 67, no. 6,
  • 1988, "MAXIMUM - A SCANNING PHOTOELECTRON MICROSCOPE AT ALADDIN." NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 266, no. 1-3,
  • R. E. Viturro, J. L. Shaw, and L.J. Brillson, 1988, "Observation of Arsenic- and Metal-Induced GaAs Interface States by Low Energy Cathodoluminescence Spectroscopy." J. Vac. Sci. Technol. B6, 1397 - 1397.
  • 1988, "DEEP LEVEL FORMATION AND BAND BENDING AT METAL CDTE INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 6, no. 3,
  • 1988, "CHEMICALLY CONTROLLED DEEP LEVEL FORMATION AND BAND BENDING AT METAL-CDTE INTERFACES." APPLIED PHYSICS LETTERS 53, no. 18,
  • 1988, "BAND BENDING AND INTERFACE STATES FOR METALS ON GAAS." APPLIED PHYSICS LETTERS 52, no. 24,
  • 1988, "UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL GAAS INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 6, no. 4,
  • 1988, "LOW-ENERGY CATHODOLUMINESCENCE SPECTROSCOPY OF SEMICONDUCTOR INTERFACES." SCANNING MICROSCOPY 2, no. 2,
  • P.Chiaradia, L.J. Brillson, M. Fanfoni, P. De Padova, P. Nataletti, R. E. Viturro, M. L. Slade, G. Margaritondo, M. K. Kelly, D. Kilday, and N.Tache, 1988, "Initial Stages of GaP (110) Oxidation." Solid State Commun. 67, 647 - 647.
  • 1988, "CATHODOLUMINESCENCE SPECTROSCOPY OF METAL-SEMICONDUCTOR INTERFACE STRUCTURES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 6, no. 3,

1987

  • 1987, "OPTICAL-EMISSION PROPERTIES OF METAL INP AND GAAS INTERFACE STATES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 5, no. 4,
  • 1987, "PHYSICS AND CHEMISTRY OF METAL-COMPOUND SEMICONDUCTOR INTERFACES." JOURNAL OF THE ELECTROCHEMICAL SOCIETY 134, no. 3,
  • 1987, "CLEAVAGE-RELATED ELECTRONIC STATES OF AL-INP(110) INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 5, no. 4,
  • 1987, "UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES - A REPRESENTATIVE III-V COMPOUND INTERFACE." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 5, no. 4,
  • 1987, "NEAR-IDEAL SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES." APPLIED PHYSICS LETTERS 50, no. 19,
  • 1987, "MODIFICATION OF ELECTRONIC AND CHEMICAL-STRUCTURE AT AU AND IN-CDTE INTERFACES BY PULSED LASER ANNEALING." JOURNAL OF ELECTRONIC MATERIALS 16, no. 4,

1986

  • R. E. Viturro, M. L. Slade and L.J. Brillson, 1986, "Optical Emission Properties of Metal/III-V Compound Semiconductor Interface States." Phys. Rev. Lett. 57, 487 - 487.
  • Allara, David L.; Brillson, Leonard J.; Brusic, Vlasta; Buckley, Donald H.; Chelikowsky, James R.; Clark, William A. T.; Clarke, David R.; Ferrante, John; Fowkes, Fred M.; Gottschall, Robert J.; Grant, Ron W.; McMahon, Charles J. Jr.; Margaritondo, Giorgio; Mattox, Donald M.; Noolandi, Jaan, 1986, "PANEL REPORT ON INTERFACIAL BONDING AND ADHESION.." Materials Science and Engineering 83, no. 2,
  • BRILLSON,L,J, 1986, "PROMOTING AND CHARACTERIZING NEW CHEMICAL-STRUCTURE AT METAL-SEMICONDUCTOR INTERFACES." Surface Science 168, no. 1-3, 260-274 - 260-274.
  • C.F. Brucker, L.J. Brillson, and Y. Shapira, 1986, "UPS, XPS and AES Studies of CaF2-CdSe." Thin Solid Films 135, 203 - 203.
  • 1986, "OXYGEN DIFFUSION AND REACTION AT ANNEALED INSB MOS INTERFACES." SURFACE SCIENCE 178, no. 1-3,
  • 1986, "TITANIUM SILICON AND SILICON DIOXIDE REACTIONS CONTROLLED BY LOW-TEMPERATURE RAPID THERMAL ANNEALING." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 4, no. 3,
  • 1986, "SEMICONDUCTOR INTERFACES." MATERIALS SCIENCE AND ENGINEERING 83, no. 2,
  • 1986, "STUDIES OF CAF2-CDSE INTERFACES USING UV AND X-RAY PHOTOEMISSION SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY." THIN SOLID FILMS 135, no. 2,
  • 1986, "PROMOTING AND CHARACTERIZING NEW CHEMICAL-STRUCTURE AT METAL-SEMICONDUCTOR INTERFACES." SURFACE SCIENCE 168, no. 1-3,
  • 1986, "LASER-INDUCED CHEMICAL-REACTIONS AT THE AI/III-V COMPOUND SEMICONDUCTOR INTERFACE." JOURNAL OF APPLIED PHYSICS 60, no. 6,
  • 1986, "ACCEPTOR-LIKE ELECTRON TRAPS CONTROL EFFECTIVE BARRIER FOR ULTRAHIGH VACUUM-CLEAVED AND LASER-ANNEALED AL/INP." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 4, no. 4,
  • 1986, "ABSENCE OF FERMI LEVEL PINNING AT METAL-INX GA1-XAS (100) INTERFACES." APPLIED PHYSICS LETTERS 48, no. 21,
  • 1986, "FERMI LEVEL PINNING AND CHEMICAL INTERACTIONS AT METAL-INXGA1-XAS(100) INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 4, no. 4,

1985

  • 1985, "CATHODOLUMINESCENCE SPECTROSCOPY STUDIES OF LASER-ANNEALED METAL-SEMICONDUCTOR INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 3, no. 3,
  • 1985, "CONTROL OF TITANIUM-SILICON AND SILICON DIOXIDE REACTIONS BY LOW-TEMPERATURE RAPID THERMAL ANNEALING." APPLIED PHYSICS LETTERS 47, no. 10,
  • 1985, "ACCEPTORLIKE ELECTRON TRAPS AND THERMALLY REVERSIBLE BARRIER HEIGHTS FOR AL ON UHV-CLEAVED (110) INP." JOURNAL OF APPLIED PHYSICS 58, no. 8,
  • 1985, "ADVANCES IN CHARACTERIZING AND CONTROLLING METAL-SEMICONDUCTOR INTERFACES." APPLICATIONS OF SURFACE SCIENCE 22-3, no. MAY,
  • BRILLSON,L,J, 1985, "ADVANCES IN CHARACTERIZING AND CONTROLLING METAL-SEMICONDUCTOR INTERFACES." Applications of Surface Science 22-3, no. MAY, 948-968 - 948-968.

1984

  • 1984, "CONTROL AND CHARACTERIZATION OF METAL-INP AND GAAS INTERFACE STRUCTURES FORMED BY LASER-ENHANCED REACTIONS." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 2, no. 3,
  • 1984, "PHOTOEMISSION-STUDIES OF ATOMIC REDISTRIBUTION AT GOLD-SILICON AND ALUMINUM-SILICON INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 2, no. 2,
  • 1984, "INTERDIFFUSION AND CHEMICAL TRAPPING AT INP(110) INTERFACES WITH AU, AL, NI, CU, AND TI." PHYSICAL REVIEW B 30, no. 8,
  • 1984, "REDUCTION OF SILICON-ALUMINUM INTERDIFFUSION BY IMPROVED SEMICONDUCTOR SURFACE ORDERING." APPLIED PHYSICS LETTERS 44, no. 1,
  • H. Richter, L.J. Brillson, R. Daniels, M. Kelly, and G. Margaritondo, 1984, "Control and Characterization of Metal-InP and GaAs Interfaces Formed by Laser-Enhanced Reactions." J. Vac. Sci. Technol. B2, 591 - 591.
  • 1984, "ORIGIN OF SURFACE AND METAL-INDUCED INTERFACE STATES IN INP." PHYSICAL REVIEW B 29, no. 12,
  • BRILLSON,L,J, 1984, "SOFT-X-RAY PHOTOEMISSION TECHNIQUES FOR CHARACTERIZING METAL-SEMICONDUCTOR INTERFACES." PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS 447, 89-101 - 89-101.
  • 1984, "SOFT-X-RAY PHOTOEMISSION TECHNIQUES FOR CHARACTERIZING METAL-SEMICONDUCTOR INTERFACES." PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS 447,

1983

  • L.J. Brillson, 1983, "Advances in Understanding Metal - Semiconductor Interfaces by Ultrahigh Vacuum Techniques." International Journal of the Physics and Chemistry of Solids 44, 703 - 703.
  • 1983, "INP SURFACE-STATES AND REDUCED SURFACE RECOMBINATION VELOCITY." APPLIED PHYSICS LETTERS 43, no. 2,
  • 1983, "PHOTOEMISSION-STUDIES OF REACTIVE DIFFUSION AND LOCALIZED DOPING AT II-VI-COMPOUND SEMICONDUCTOR-METAL INTERFACES." PHYSICA B & C 117, no. MAR,
  • 1983, "INVESTIGATION OF INP SURFACE AND METAL INTERFACES BY SURFACE PHOTO-VOLTAGE AND AUGER-ELECTRON SPECTROSCOPIES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 1, no. 2,
  • 1983, "AUGER DEPTH PROFILING STUDIES OF INTERDIFFUSION AND CHEMICAL TRAPPING AT METAL-INP INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 1, no. 3,
  • 1983, "SYSTEMATICS OF CHEMICAL-STRUCTURE AND SCHOTTKY BARRIERS AT COMPOUND SEMICONDUCTOR METAL INTERFACES." SURFACE SCIENCE 132, no. 1-3,
  • 1983, "ADVANCES IN UNDERSTANDING METAL-SEMICONDUCTOR INTERFACES BY SURFACE SCIENCE TECHNIQUES." JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 44, no. 8,
  • BRILLSON,L,J; BRUCKER,C,F; KATNANI,A,D; STOFFEL,N,G; Daniels,R; Margaritondo,G, 1983, "SYSTEMATICS OF CHEMICAL-STRUCTURE AND SCHOTTKY BARRIERS AT COMPOUND SEMICONDUCTOR METAL INTERFACES." SURFACE SCIENCE 132, no. 1-3, 212-232 - 212-232.
  • Brillson, L. J., 1983, "CONTACT TECHNOLOGY IN 3-5 DEVICE ANALYSIS AND MODIFICATION OF METAL-SEMICONDUCTOR CONTACT INTERFACES IN 3-5 DEVICES.." Technical Digest - International Electron Devices Meeting

1982

  • 1982, "INTERACTION OF METALS WITH SEMICONDUCTOR SURFACES." APPLICATIONS OF SURFACE SCIENCE 11-2, no. JUL,
  • 1982, "TIME-RESOLVED CHARGE INJECTION - EFFECT OF INTERFACIAL AMBIENTS UPON CONTACT PERFORMANCE." JOURNAL OF APPLIED PHYSICS 53, no. 1,
  • BRILLSON,L,J, 1982, "CHEMICAL AND ELECTRONIC-STRUCTURE OF COMPOUND SEMICONDUCTOR-METAL INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 20, no. 3, 652-658 - 652-658.
  • 1982, "FERMI-LEVEL PINNING AND CHEMICAL-STRUCTURE OF INP-METAL INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 21, no. 2,
  • 1982, "SCHOTTKY-BARRIER MODULATION AT METAL CONTACTS TO CDS AND CDSE." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 21, no. 2,
  • N.G. Stoffel, R.R. Daniels, G. Margaritondo, C.F. Brucker, and L.J. Brillson, 1982, "CdS-Cu Interface Formation: A Microscopic Study of the Interdiffusion and Chemical Processes." J. Vac. Sci. Technol. 20, 701 - 701.
  • 1982, "ROLE OF CATION DISSOCIATION IN SCHOTTKY-BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR METAL INTERFACES." THIN SOLID FILMS 93, no. 1-2,
  • 1982, "CHEMICAL AND ELECTRONIC-STRUCTURE OF COMPOUND SEMICONDUCTOR-METAL INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 20, no. 3,
  • Brucker, C. F.; Brillson, L. J., 1982, "ROLE OF CATION DISSOCIATION IN SCHOTTKY BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR-METAL INTERFACES.." Materials Research Society Symposia Proceedings 10,
  • BRILLSON,L,J, 1982, "INTERFACE CHEMICAL-REACTION AND DIFFUSION OF THIN METAL-FILMS ON SEMICONDUCTORS." Thin Solid Films 89, no. 4, 461-469 - 461-469.
  • 1982, "CDS-CU INTERFACE FORMATION - A MICROSCOPIC STUDY OF THE INTER-DIFFUSION AND CHEMICAL PROCESSES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 20, no. 3,
  • 1982, "INTERFACE CHEMICAL-REACTION AND DIFFUSION OF THIN METAL-FILMS ON SEMICONDUCTORS." THIN SOLID FILMS 89, no. 4,
  • 1982, "PHOTO-VOLTAGE STUDIES OF ALUMINUM-PHTHALOCYANINE INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 20, no. 2,
  • Brillson, L. J.; Brucker, C. F.; Stoffel, N. G.; Katnani, A.; Daniels, R.; Margaritondo, G., 1982, "PHOTOEMISSION STUDIES OF REACTIVE DIFFUSION AND LOCALIZED DOPING AT 11-VI COMPOUND SEMICONDUCTOR-METAL INTERFACES.." Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics 117-118, no. Pt II,
  • L.J. Brillson, 1982, "Surface Photovoltage Measurements and Fermi Level Pinning." Thin Solid Films 89, L27 - L27.

1981

  • 1981, "ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL." PHYSICAL REVIEW LETTERS 46, no. 6,
  • 1981, "SOFT-X-RAY PHOTOEMISSION-STUDY OF ANNEALED AL-OVERLAYERS ON GAAS (110)." SOLID STATE COMMUNICATIONS 38, no. 12,
  • 1981, "ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 19, no. 3,
  • 1981, "ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES." PHYSICAL REVIEW LETTERS 46, no. 13,
  • Brucker, C. F.; Brillson, L. J., 1981, "ROLE OF CATION DISSOCIATION IN SCHOTTKY BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR-METAL INTERFACES.." Thin Solid Films 93, no. 1/2,
  • A. Kahn,L.J. Brillson, G. Margaritondo, and A. D. Katnani, 1981, "Soft X-ray Photoemission Study of Annealed Al Layers on GaAs(110)." Solid State Commun 38, 1269 - 1269.
  • Kahn,A; Kanani,D; CARELLI,J; Yeh,J,L; Duke,C,B; Meyer,R,J; Paton,A; BRILLSON,L, 1981, "LEED INTENSITY ANALYSIS OF THE STRUCTURE OF AL ON GAAS(110)." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 18, no. 3, 792-796 - 792-796.
  • 1981, "NEW METHOD FOR CONTROL OF SCHOTTKY-BARRIER HEIGHT." APPLIED PHYSICS LETTERS 39, no. 1,
  • L.J. Brillson and C. F. Brucker, 1981, "Reactive Interdiffusion and Electronic Barriers at Metal-CdS and Metal-CdSe Interfaces." J. Vac. Sci. Technol. 19, 617 - 617.
  • 1981, "PHOTO-VOLTAGE SATURATION AND RECOMBINATION AT AL-GAAS INTERFACIAL LAYERS." SURFACE SCIENCE 102, no. 2-3,
  • 1981, "CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION." APPLIED PHYSICS LETTERS 38, no. 10,
  • 1981, "ATOMIC INTER-DIFFUSION AT AU-GAAS INTERFACES STUDIED WITH AL INTERLAYERS." PHYSICAL REVIEW B 23, no. 12,
  • L.J. Brillson, C.F. Brucker, A.D. Katnani, N.G. Stoffel, and G. Margaritondo, 1981, "Atomic and Electrical Structure of InP-Metal Interfaces: A Prototypical III-V Compound Semiconductor." J. Vac. Sci. Technol. 19, 661 - 661.
  • L.J. Brillson, A. Kahn, J. Carelli, D. Katnani, C. B. Duke, and A. Paton, 1981, "The Atomic Geometry of Al-GaAs Interfaces: GaAs (110)-p (1x1)-Al (), 0." J. Vac. Sci. Technol. 19, 331 - 331.
  • 1981, "REACTIVE INTER-DIFFUSION AND ELECTRONIC BARRIERS AT METAL-CDS AND METAL-CDSE INTERFACES - CONTROL OF SCHOTTKY-BARRIER HEIGHT USING REACTIVE INTERLAYERS." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 19, no. 3,
  • 1981, "FIELD-EFFECT SPECTROSCOPY OF CDSE-INSULATOR INTERFACE STATES." JOURNAL OF APPLIED PHYSICS 52, no. 8,
  • 1981, "REACTIVE INTER-DIFFUSION AT METAL-CDS AND METAL-CDSE INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 18, no. 3,
  • L.J. Brillson and C. F. Brucker, 1981, "Reactive Interdiffusion at Metal-CdS and Metal-CdSe Interfaces." J. Vac. Sci. Technol. 18, 787 - 787.

1980

  • 1980, "BONDING AND DIFFUSION AT AL AND AU INTERFACES WITH CDS." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 17, no. 1,
  • 1980, "SURFACE POINT-DEFECTS AND SCHOTTKY-BARRIER FORMATION ON ZNO(1010)." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 17, no. 5,
  • 1980, "ATOMIC-INTERLAYER-CONTROLLED DIFFUSION AT SEMICONDUCTOR-SEMICONDUCTOR INTERFACES." APPLIED PHYSICS LETTERS 37, no. 10,
  • L.J. Brillson, C.F. Brucker, G. Margaritondo, J. Slowik, and N.G. Stoffel, 1980, "Photoemission Studies of Atomic Redistribution at Compound Semiconductor Interfaces." J. Phys. Soc. Japan N/A, 1089 - 1089.
  • 1980, "SECONDARY ILLUMINATION EFFECTS IN THE PHOTOEMISSION SPECTRA OF GAAS AND CDS." SOLID STATE COMMUNICATIONS 35, no. 3,
  • 1980, "ATOMIC INTER-DIFFUSION AT AU-AL-GAAS INTERFACES." APPLIED PHYSICS LETTERS 36, no. 4,
  • L.J. Brillson, G. Margaritondo, N.G. Stoffel, R.S. Bauer, R.Z. Bachrach, and G. Hansson, 1980, "Measurement and Modulation of Interdiffusion by Atomic Layers at Au-GaAs Interfaces." J. Vac. Sci. Technol. 17, 880 - 880.
  • 1980, "AU AND AL INTERFACE REACTIONS WITH SIO2." APPLIED PHYSICS LETTERS 37, no. 11,
  • 1980, "MEASUREMENT AND MODULATION OF ATOMIC INTER-DIFFUSION AT AU-AL-GAAS(110) INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 17, no. 5,
  • 1980, "ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES." PHYSICAL REVIEW LETTERS 44, no. 10,
  • L.J. Brillson, R.S. Bauer, R.Z. Bachrach, and J.C. McMenamin, 1980, "Bonding and Diffusion at Au and Al Interfaces with CdS." J. Vac. Sci. Technol. 17, 476 - 476.

1979

  • 1979, "CHEMICAL MECHANISMS OF SCHOTTKY-BARRIER FORMATION." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 16, no. 5,
  • 1979, "CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES." PHYSICAL REVIEW LETTERS 42, no. 6,

1978

  • BRILLSON,L,J, 1978, "CHEMICAL-REACTION AND CHARGE REDISTRIBUTION AT METAL-SEMICONDUCTOR INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 15, no. 4, 1378-1383 - 1378-1383.
  • 1978, "TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY." PHYSICAL REVIEW LETTERS 40, no. 4,
  • 1978, "ELECTRON-ENERGY LOSS SPECTROSCOPY AND OPTICAL-PROPERTIES OF POLYMETHYLMETHACRYLATE FROM 1 TO 300 EV." JOURNAL OF CHEMICAL PHYSICS 69, no. 9,
  • 1978, "SURFACE PHOTO-VOLTAGE SPECTROSCOPY OF DEFECTS AND IMPURITIES IN TRIGONAL SELENIUM." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 15, no. 2,
  • 1978, "CHEMICAL-REACTION AND CHARGE REDISTRIBUTION AT METAL-SEMICONDUCTOR INTERFACES." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 15, no. 4,
  • 1978, "CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES." PHYSICAL REVIEW B 18, no. 6,
  • 1978, "CHEMICAL-REACTIONS AND DIPOLE FORMATION AT METAL-SEMICONDUCTOR INTERFACES." BULLETIN OF THE AMERICAN PHYSICAL SOCIETY 23, no. 3,

1977

  • 1977, "COUPLED INTERFACE PLASMONS OF AL FILMS ON CDSE AND CDS." PHYSICAL REVIEW LETTERS 38, no. 5,
  • 1977, "SURFACE ELECTRONIC AND CHEMICAL-STRUCTURE OF (1120)CDSE - COMPARISON WITH CDS." SURFACE SCIENCE 69, no. 1,
  • 1977, "ELECTRON ENERGY-LOSS SPECTROSCOPY OF TETRACYANOQUINODIMETHANE, TCNQ, TETRATHIAFULVALENE, TTF, AND SALT TTF-TCNQ." SOLID STATE COMMUNICATIONS 24, no. 1,

1976

  • 1976, "DIRECT COMPARISON OF AUGER-ELECTRON SPECTROSCOPY AND ESCA SENSITIVITIES." JOURNAL OF APPLIED PHYSICS 47, no. 9,
  • 1976, "SURFACE PHOTOVOLTAGE AND ELECTRON ENERGY-LOSS SPECTROSCOPY OF OXYGEN ADSORBED ON (1120) CDSE." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 13, no. 1,
  • 1976, "X-RAY PHOTOIONIZATION CROSS-SECTIONS FOR QUANTITATIVE-ANALYSIS." SURFACE SCIENCE 58, no. 2,

1975

  • 1975, "SURFACE PHOTOVOLTAGE AND AUGER-SPECTROSCOPY STUDIES OF (1120) CDS SURFACE." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY 12, no. 1,
  • 1975, "OBSERVATION OF EXTRINSIC SURFACE STATES ON (1120) CDS." SURFACE SCIENCE 51, no. 1,

1974

  • BRILLSON,L,J; Burstein,E; MULDAWER,L, 1974, "RAMAN OBSERVATION OF FERROELECTRIC PHASE-TRANSITION IN SNTE." PHYSICAL REVIEW B 9, no. 4, 1547-1551 - 1547-1551.
  • BRILLSON,L,J; Conwell,E,M, 1974, "OPTICAL GUIDED WAVES IN CDSXSE1-X DIFFUSED LAYERS." JOURNAL OF APPLIED PHYSICS 45, no. 12, 5289-5293 - 5289-5293.
  • SHAND,M,L; Burstein,E; BRILLSON,L,J, 1974, "RAMAN INVESTIGATION OF FERROELECTRICITY IN IV-VI SEMICONDUCTORS." FERROELECTRICS 7, no. 1-4, 283-285 - 283-285.

1972

  • BRILLSON,L,J; Burstein,E, 1972, "ELECTRIC-FIELD-INDUCED RAMAN SCATTERING BY LO PHONONS IN AN EXTERNAL MAGNETIC-FIELD." PHYSICAL REVIEW B-SOLID STATE 5, no. 8, 2973 - 2973.

1971

  • L.J. Brillson, E. Burstein, A.A. Maradudin and T. Starke, 1971, "Frequencies of the Long Wavelength Optical Vibration Modes of Graphite." J. Phys. Chem. Solids N/A, 187 - 187.
  • BRILLSON,L; Burstein,E, 1971, "SURFACE ELECTRIC-FIELD-INDUCED RAMAN SCATTERING IN PBTE AND SNTE." PHYSICAL REVIEW LETTERS 27, no. 12, 808 - 808.
  • Pinczuk,A; BRILLSON,L; Burstein,E; ANASTASS,E, 1971, "RESONANT LIGHT SCATTERING BY SINGLE-PARTICLE ELECTRONIC EXCITATIONS IN GAAS." PHYSICAL REVIEW LETTERS 27, no. 6, 317 - 317.

Presentations

  • "Microscopic Characterization of Schottky Barrier Formation." 1979,
  • "The Physics and Chemistry of Schottky Barriers." 1980,
  • "Contact Technology in 3-5 Devices Analysis and Modification of Metal-Semiconductor Contact Interface in 3-5 Devices." 1983,
  • "Metal-Semiconductor Interface Characterization and Control." 1985,
  • "Characterization of Metal-Semiconductor Interfaces by Surface Science Techniques." 1986,
  • "Tailoring Metal-Semiconductor Interfaces." 1986,
  • "Surface Science Characterization of Metal-Semiconductor Interfaces." 1987,
  • "Interface Chemical Bonding and Diffusion on an Atomic Scale at Metal-Semiconductor Interfaces." 1987,
  • "Schottky Barriers- Still a Moving Target, Texas Chapter." 1988,
  • "Atomic Redistribution and Electronic Structure at Metal-Semiconductor Interfaces." 1981,
  • "Soft X-Ray Photoemission Studies of Metal-Semiconductor Interfaces." 1981,
  • "Chemical Reactions and Interdiffusion at III-V Compound Semiconductor-Metal Interfaces." 1985,
  • "Chemical Interactions Between Metals and Semiconductors." 1986,
  • "Metallization of III-V Compounds." 1986,
  • "Physics and Chemistry of Metal - Semiconductor Interfaces." 1987,
  • "Atomic Scale Characterization and Processing of Semiconductor Surfaces and Interfaces." 1987,
  • "Electronic Structure of Metal - Semiconductor Interfaces." 1987,
  • "Surface and Interface Analysis of Microelectronic Materials Processing and Growth." 1990,
  • "Deep Level Luminescence Spectroscopy of Semiconductor Heterojunctions." 1995,
  • "Changing Roles of Materials Researchers in Industry, Plenary Lecture." 1996,
  • "Atomic-Scale Control of Electronic and Chemical Structure of Heterojunctions." 1997,
  • ""Buried” Si-SiO2 Interface States." 1999,
  • "Low Energy Cathodoluminescence Spectroscopy of Wide Band Gap Semiconductors." 1999,
  • "The Impact of Surface Defects on SiC Schottky and Ohmic Contact Formation." 2005,
  • "Localized States and Charge Transfer at ZnO Surfaces and Interfaces." 2006,
  • "Overview of Recent Advances in Spectroscopy of Electronic Materials Surfaces and Interfaces." 2006,
  • "Electronic Properties of Native Point Defects at ZnO Surfaces and Interfaces." 2011,
  • "Characterization of Schottky Barriers Applied to III-V Compounds." 1988,
  • "Progress in Understanding and Controlling Metal-Semiconductor Interfaces." 1989,
  • "Metal-Semiconductor Interface Reactions and Schottky Barriers." 1990,
  • "Metal Work Function Dominated Contacts to GaAs." 1990,
  • "Defects and Doping at GaN/Sapphire Interfaces." 2000,
  • "Low Energy Electron Excited Nanoscale Luminescence Spectroscopy of Defects at Buried Interfaces and Ultrathin Films." 2001,
  • "Controlling Schottky Barriers and Ohmic Contacts by Sub-Surface Processing." 2008,
  • "Defects and Interfaces – A New Look." 2008,
  • "ZnO Polarity, Interface Defects and Schottky Barrier Formation." 2009,
  • "Spectroscopy of Native Point Defects at ZnO Surfaces and Interfaces." 2012,
  • "Native Point Defect Energies, Densities, and Electrostatic Repulsion Across MgZnO Alloys." 2014,
  • "Native Defect Formation and Interface Segregation in ZnO, (Mg,Zn)O and Complex Oxides." 2014,
  • "Localized Electronic States Near GaN Surfaces and Interfaces." 1999,
  • "Changing Roles of Researchers in Industry." 2000,
  • "Low Energy CL Spectroscopy of Interfaces and Nanostructures." 2006,
  • "Schottky Barrier and Ohmic Contact Control by Sub-Surface Processing." 2007,
  • "Controlling Schottky Barriers and Doping with Native Point Defects." 2011,
  • "Electronic Contacts for Optoelectronics." 1991,
  • "Photoemission and Low Energy Cathodoluminescence Spectroscopy Studies of Metal - Semiconductor Interfaces." 1992,
  • "Microcathodoluminescence Characterization of III-V Nitride Heterojunctions and Devices." 2003,
  • "Silicon Carbide Studied Via LEEN and Cathodoluminescence Spectroscopy." 2003,
  • "Localized Defect States, Impurities, and Doping in AlxGa1-xN Epilayers." 2003,
  • "Depth-Resolved Cathodoluminescence Spectroscopy as a Probe of Defect Structure in Oxides." 2009,
  • "The Electronic Properties of Native Point Defects at ZnO Surfaces and Interfaces." 2011,
  • "Native Point Defects at ZnO Surfaces, Interfaces, and Bulk Films." 2011,
  • "Control of Native Point Defects in Complex Oxides by Electromechanical Forces." 2014,
  • "Progress in Understanding Metal-Semiconductor Interfaces by Surface Science Techniques." 1984,
  • "Understanding and Controlling Metal-Semiconductor Interfaces." 1989,
  • "Deep Level Spectroscopy of Heterojunction Interfaces." 1997,
  • "Native Defects and Schottky Barrier Formation at Metal-ZnO Interfaces." 2006,
  • "The Role of Defects at Nanoscale Semiconductor Interfaces." 2005,
  • "Surface Electronic Structure of Metals and Other Adsorbates on CdS and CdSe." 1976,
  • "Atomic Redistribution at Metal III-V Compound Semiconductor Interfaces." 1980,
  • "Metal/Semiconductor Interdiffusion." 1981,
  • "Atomic Redistribution at Compound Semiconductor-Metal Interfaces." 1981,
  • "The Physics and Chemistry of Metal-Semiconductor Interfaces." 1981,
  • "Interaction of Metals with Semiconductor Surfaces, Plenary Lecture." 1981,

Papers in Proceedings

2012

  • "ImmunoFET feasibility in physiological salt environments.." (5 2012).
  • "Native point defects at ZnO surfaces, interfaces and bulk films." (1 2012).
  • Brillson,Leonard,J; Dong,Y; Tuomisto,F; Svensson,B,G; Kuznetsov,A,Yu; Doutt,D; Mosbacker,H,L; Cantwell,G; Zhang,J; Song,J,J; Fang,Z-Q; Look,D,C "Native point defects at ZnO surfaces, interfaces and bulk films." in 16th International Semiconducting and Insulating Materials Conference (SIMC-XVI). (1 2012). 1566-1569 - 1566-1569.

2010

  • T. R. Nicholson III, S. Gupta, X. Wen, H.-H. Wu, A. Ramish, P. Casal, K. J. Kwak, B. Bhushan, P. R. Berger, W. Lu, L. J. Brillson, Stephen Craig Lee "Rational enhancement of nanobio-technological device function illustrated by partial optimization of a protein sensing field effect transistor." JOURNAL: "Proc. IMechE." (1 2010). Part N - Part N.

2009

  • D. Doutt, Y. Dong, M. Myers, D. Tayim, C. Zgrabik, Z.-Q. Fang, D.C. Look, G. Cantwell, J. Zhang, J.J. Song, H.L. Mosbacker, and L.J. Brillson "Impact of Surface Morphology and Polarity on ZnO Optical Emission." (1 2009). B06-15 - B06-15.
  • Hetzer,M,J; BRILLSON,L,J; Jensen,D,G "INTERFACIAL ALLOYING AND DEFECT FORMATION INSIDE OPERATIONAL CIGS SOLAR CELLS." in 34th IEEE Photovoltaic Specialists Conference. (1 2009). 565-568 - 565-568.
  • Brillson,L,J; Dong,Y; Doutt,D; Look,D,C; Fang,Z-Q "Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation." JOURNAL: "PHYSICA B-CONDENSED MATTER." in 25th International Conference on Defects in Semiconductors. (12 2009). 4768-4773 - 4768-4773.
  • Fang,Z-Q; Claflin,B; Look,D,C; Dong,Y-F; BRILLSON,L "Metal contacts on bulk ZnO crystal treated with remote oxygen plasma." JOURNAL: "JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B." in 1st International Conference on Nanomanufacturing/4th International Conference on Technological Advances of Thin Films and Surface Coatings. (5 2009). 1774-1779 - 1774-1779.
  • "Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation." (12 2009).
  • Brillson,L,J; Mosbacker,H,L; Doutt,D,L; Dong,Y; Fang,Z-Q; Look,D,C; Cantwell,G; Zhang,J; Song,J,J "Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces." JOURNAL: "SUPERLATTICES AND MICROSTRUCTURES." in 9th International Workshop on Beam Injection Assessment of Microstructure in Semiconductors. (4 2009). 206-213 - 206-213.

2008

  • "Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces." (10 2008).

2007

  • E. Eteshola, M.T. Keener, D.R. Tokachichu, B.R. Cipriany, M. Gao, P.D. Barnes, L.J. Brillson, B. Bhushan and S.C. Lee "Engineering Biointerfaces for Distance Dependent Nano/Micro-scale Sensor Devices." JOURNAL: "Mater. Res. Soc. Proc. Symp. N." (1 2007). N/A - N/A.
  • "Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces." (1 2007).
  • "Process-dependent electronic states at Mo/hafnium oxide/Si interfaces." (1 2007).

2006

  • Gao,M; Tumakha,S,P; Onishi,T; Tsukimoto,S; Murakami,M; BRILLSON,L,J "Characterization of Ti/Al ohmic contacts to p-type 4H-SiC using cathodoluminescence and Auger electron spectroscopies." in International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). (1 2006). 891-894 - 891-894.
  • "Nanoscale deep level defect correlation with Schottky barriers in 4H-SiC/metal diodes." (1 2006).

2005

  • "Proton-induced damage in gallium nitride-based Schottky diodes." (12 2005).
  • "Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces." (5 2005).
  • Brillson,L,J; Bradley,S,T; Tumakha,S,H; Goss,S,H; Sun,X,LL; Okojie,R,S; Hwang,J; Schaff,W,J "Local electronic and chemical structure at GaN, AlGaN and SiC heterointerfaces." JOURNAL: "APPLIED SURFACE SCIENCE." in 12th International Conference on Solid Films and Surfaces (ICSFS-12). (5 2005). 257-263 - 257-263.

2004

  • "SiC studied via LEEN and cathodoluminescence spectroscopy." (1 2004).

2003

  • "Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence." (12 2003).
  • "Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors." (12 2003).
  • L.J. Brillson "Microcathodoluminescence Characterization of III-V Nitride Heterojunctions and Devices." (1 2003). 229-235 - 229-235.
  • "Near-surface defect distributions in Cu(In,Ga)Se-2." (5 2003).

2002

  • "Surface morphology and chemistry of 4H-and 6H-SiC after cyclic oxidation." (1 2002).
  • "Low-energy electron-excited nanoluminescence studies of GaN and related materials." in 8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8). (5 2002).
  • "Electrical and optical properties of GaN/Al2O3 interfaces." (12 2002).
  • B.D. White, M. Bataiev, L.J. Brillson, B.K. Choi, D.M. Fleetwood, R.D. Schrimpf, S.T. Pantelides, R.W. Dettmer, and U.K. Mishra "Characterization of Proton Irradiated AlGaN/GaN Modulation Doped Field-Effect Transistor Structures by Low Energy Electron-Excited Nanoscale Luminescence." JOURNAL: "IEEE Trans. Nuclear Sci., Proc. 39th Annual Int’l Nucl. Space Radiation Effects Conf.." (12 2002). 2695-2701 - 2695-2701.
  • Okojie,R,S; Xhang,M; Pirouz,P; Tumakha,S; Jessen,G; BRILLSON,L,J "4H-to 3C-SiC polytypic transformation during oxidation." in International Conference on Silicon Carbide and Related Materials. (1 2002). 451-454 - 451-454.

2001

  • "Analysis of tunneling magnetoresistance test structures by low energy electron nanoscale-luminescence spectroscopy." (1 2001).
  • "Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films." (1 2001).
  • "Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces." in 10th International Conference on Solid Films and Surfaces (ICSFS-10). (5 2001).
  • S.H.Goss, A.P.Young, L.J. Brillson, D.C.Look, and R.J.Molnar "Direct Observation of Bulk and Interface States in GaN on Sapphire grown by Hydride Vapor Phase Epitaxy." (1 2001). G3.59-71 - G3.59-71.

2000

  • "Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces." (1 2000).
  • White,B,D; Brillson,L,J; Lee,S,C; Fleetwood,D,M; Schrimpf,R,D; Pantelides,S,T; Lee,Y,M; Lucovsky,G "Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation." JOURNAL: "IEEE TRANSACTIONS ON NUCLEAR SCIENCE." in IEEE Nuclear and Space Radiation Effects Conference (NSREC). (12 2000). 2276-2280 - 2276-2280.

1999

  • BRILLSON,L,J; Young,A,P; Schafer,J; Niimi,H; Lucovsky,G "Ultrathin silicon oxide and nitride - Silicon interface states." in Symposium on Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics, at the 1999 MRS Spring Meeting. (1 1999). 549-558 - 549-558.
  • Hierro,A; Kwon,D; Ringel,S,A; BRILLSON,L,J; Young,A,P; Franciosi,A "Deep level characterization of interface-engineered ZnSe layers grown by molecular beam epitaxy on GaAs." in Symposium D on Integration of Dissimilar Materials in Micro- and Optoelectronics / Symposium I on III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications, at the 1998 MRS Fall Meeting. (1 1999). 77-82 - 77-82.
  • "Defect formation near GaN surfaces and interfaces." (12 1999).
  • "Ultrathin silicon oxide and nitride - Silicon interface states." (1 1999).
  • "Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy." (3 1999).

1998

  • J. Schäfer, A. P. Young, L.J. Brillson, G. Lucovsky, and H. Niimi "Defect Characterization of Ultrathin Plasma-Deposited Silicon Dioxide by Cathodoluminescence Spectroscopy." JOURNAL: "Mater. Res. Soc. Proc.." (1 1998). 151 - 151.
  • Young,A,P; Aptowitz,K; BRILLSON,L,J "Cathodoluminescence deep level spectroscopy of etched and in-situ annealed 6H-SiC." in Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature. (1 1998). 137-142 - 137-142.
  • J. Schäfer, A.P.Young, L.J. Brillson, H. Niimi, and G. Lucovsky "Characterization of the Interface Between Plasma-Oxidized SiO2 and Crystalline Silicon by Cathodoluminescence Spectroscopy (CLS)." JOURNAL: "Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials." (1 1998). 134-135 - 134-135.
  • "Cathodoluminescence studies of Si-SiO2 interfaces prepared by plasma-assisted oxidation and subjected to post-oxidation rapid thermal annealing." (1 1998).
  • Young,A,P; Schafer,J; Jessen,G,H; Bandhu,R; BRILLSON,L,J; Lucovsky,G; Niimi,H "Luminescence measurements of sub-oxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces." in International Conference on Characterization and Metrology for ULSI Technology. (1 1998). 293-297 - 293-297.

1996

  • "A high-average-power FEL for industrial applications." (1 1996).

1995

  • "Luminescence spectroscopy of semiconductor surfaces and interfaces." (1 1995).
  • "DEEP-LEVEL ELECTRONIC-STRUCTURE OF ZN/SE/GAAS HETEROSTRUCTURES." (3 1995).
  • Eklund,E,A; WAYMAN,W,H; BRILLSON,L,J; Hays,D,A "Toner adhesion: The effect of neighboring particles." in 9th International Conference on Electrostatics. (1 1995). 85-92 - 85-92.

1994

  • P. M. Fauchet, C. Peng, L. Tsybeskov, J. Vandyshev, A. Dubois, A. Raisanen, L.J. Brillson, T.E.Orlowski, J. Fouquet, S.L. Dexheimer, J. M. Rehn, G.L. McLendon, E. Ettedgui, Y. Gao, F. Seiferth, and S.K. Kurinec "Intense Room Temperature Light Emission in Porous Silicon: From Less than 450 nm to Beyond 1.5 um." (1 1994). 499-510 - 499-510.
  • GOLDMAN,R,S; Rammohan,K; RAISANEN,A; Goorsky,M; BRILLSON,L,J; RICH,D,H; Wieder,H,H; Kavanagh,K,L "ANISOTROPIC STRUCTURAL AND ELECTRONIC-PROPERTIES OF INGAAS/GAAS HETEROJUNCTIONS." in Symposium on Compound Semiconductor Epitaxy. (1 1994). 349-354 - 349-354.

1993

  • Fauchet,P,M; Ettedgui,E; RAISANEN,A; BRILLSON,L,J; Seiferth,F; Kurinec,S,K; Gao,Y; Peng,C; Tsybeskov,L "CAN OXIDATION AND OTHER TREATMENTS HELP US UNDERSTAND THE NATURE OF LIGHT-EMITTING POROUS SILICON." in SYMP ON SILICON-BASED OPTOELECTRONIC MATERIALS, AT THE 1993 SPRING MEETING OF THE MATERIALS-RESEARCH-SOC. (1 1993). 271-276 - 271-276.

1992

  • L.J. Brillson "Photoemission of Interfaces: A Link Between Fundamental Research and Industrial Applications." (1 1992). 124-142 - 124-142.
  • BRILLSON,L,J; VITOMIROV,I,M; RAISANEN,A; Chang,S; VITURRO,R,E; KIRCHNER,P,D; PETTIT,G,D; WOODALL,J,M "PROCESS-DEPENDENT ELECTRONIC-STRUCTURE AT METALLIZED GAAS CONTACTS." in SYMP ON ADVANCED METALLIZATION AND PROCESSING FOR SEMICONDUCTOR DEVICES AND CIRCUITS - 2. (1 1992). 449-455 - 449-455.
  • "PROCESS-DEPENDENT ELECTRONIC-STRUCTURE AT METALLIZED GAAS CONTACTS." (1 1992).

1991

  • BRILLSON,L,J "ADVANCES IN CONTROLLING ELECTRICAL CONTACTS FOR OPTOELECTRONICS." in CONF ON FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC CIRCUITS. (1 1991). 130-133 - 130-133.

1990

  • BRILLSON,L,J; Chang,S; Shaw,J; VITURRO,R,E "INTERFACE STATES AT METAL COMPOUND SEMICONDUCTOR JUNCTIONS." JOURNAL: "VACUUM." in 11TH INTERNATIONAL VACUUM CONGRESS ( IVC-11 ) / 7TH INTERNATIONAL CONF ON SOLID SURFACES ( ICSS-7 ). (1 1990). 1016-1020 - 1016-1020.
  • "INTERFACE STATES AT METAL COMPOUND SEMICONDUCTOR JUNCTIONS." (1 1990).
  • L.J. Brillson and Fred H. Pollak "Surface and Interface Analysis of Microelectronic Materials Processing and Growth." JOURNAL: "SPIE Proceedings." (1 1990). 1186 - 1186.
  • BRILLSON,L,J; Chang,S; VITOMIROV,I; KIRCHNER,P,D; PETTIT,G,D; WOODALL,J,M "ORIENTATION-DEPENDENT CHEMISTRY AND SCHOTTKY-BARRIER FORMATION AT METAL-GAAS INTERFACES." in 20TH INTERNATIONAL CONF ON THE PHYSICS OF SEMICONDUCTORS. (1 1990). 351-354 - 351-354.
  • "DEEP LEVEL LUMINESCENCE MEASUREMENTS OF MBE CDTE GROWTH-QUALITY AND PROCESSING." (1 1990).

1989

  • L.J. Brillson "Deep Levels and Band Bending at Metal-Semiconductor Interfaces." JOURNAL: "Metallization and Metal-Semiconductor Interfaces, NATO ASI Conference Series." (1 1989). 91-110 - 91-110.
  • BRILLSON,L,J; VITURRO,R,E; Chang,S; Shaw,J,L; Mailhiot,C; Zanoni,R; Hwu,Y; Margaritondo,G; KIRCHNER,P; WOODALL,J,M "NEW ELECTRONIC-PROPERTIES OF METAL/III-V COMPOUND SEMICONDUCTOR INTERFACES." JOURNAL: "CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES." in SYMP AT THE 1989 SPRING MEETING OF THE MATERIALS RESEARCH SOC : CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES. (1 1989). 103-115 - 103-115.
  • "NEW ELECTRONIC-PROPERTIES OF METAL/III-V COMPOUND SEMICONDUCTOR INTERFACES." (1 1989).
  • L.J. Brillson "Progress in Understanding and Controlling Metal-Semiconductor Interfaces." JOURNAL: "Industry-University Advanced Materials Conference II." (1 1989). 1-10 - 1-10.

1988

  • R. E. Viturro, J. L. Shaw, C. Mailhiot, and L.J. Brillson "Interface State Formation and Band Bending at Metal-GaAs Interfaces." (1 1988). 645 - 645.
  • L.J. Brillson and R.E.Viturro "Assessing Semiconductor Interfaces by Low Energy Cathodoluminescence Spectroscopy." JOURNAL: "SPIE Proceedings." (1 1988). 24 - 24.

1987

  • P. Chiaradia, L.J. Brillson,M. Fanfoni, P. DePadova, P. Nataletti, R. E. Viturro, M. L. Slade, G. Margaritondo, M. K. Kelly, D. Kilday, and N. Tache "Unpinned Schottky Barrier in GaP (110)." JOURNAL: "Institute of Physics Conference Series." (1 1987). 513 - 513.
  • R. E. Viturro, M. L. Slade, and L.J. Brillson "Cathodoluminescence Spectroscopy of Metal/III-V Compound Semiconductor Interface States." (1 1987). 371 - 371.

1986

  • L.J. Brillson "Chemical Reaction and Interdiffusion at III-V Compound Semiconductor-Metal Interfaces." JOURNAL: "Materials Research Society Symposium Proceedings." (1 1986). 327 - 327.

1985

  • L.J. Brillson "Metal-Semiconductor Interface Studies by Synchrotron Radiation Techniques." JOURNAL: "Handbook of Synchrotron Radiation." (1 1985). 541-609 - 541-609.
  • H. Richter and L.J. Brillson "Laser-Induced Chemical Reactions at the Al/III-V Semiconductor Interface." (1 1985). 137 - 137.

1984

  • Y.Shapira, L.J. Brillson, and A.Heller "Studies of Surface Recombination Velocity Reduction of InP Photoelectrochemical Solar Cells." JOURNAL: "Proceedings of the Fifth EC Photovoltaic Solar Energy Conference." (1 1984). 72 - 72.

1983

  • L.J. Brillson "Contact Technology in 3-5 Device Analysis and Modification of Metal-Semiconductor Contact Interface in 3-5 Devices." JOURNAL: "IEEE Technical Digest of the International Electron Devices Meeting." (1 1983). 111 - 111.
  • L.J. Brillson, C.F. Brucker, N.G. Stoffel, A.D. Katnani, R. Daniels, and G. Margaritondo "Photoemission Studies of Reactive Diffusion and Localized Doping at II-VI Compound Semiconductor Interfaces." JOURNAL: "Proceedings of the 16th International Conference on the Physics of Semiconductor." (1 1983). N/A - N/A.
  • L.J. Brillson "Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces." JOURNAL: "Proceedings of the Second IUPAP Semiconductor Symposium on Surfaces and Interfaces." (1 1983). N/A - N/A.

1980

  • G. Margaritondo, N. G. Stoffel, and L.J. Brillson "Role of Surface Photovoltaic Effect in Photoemission Spectroscopy." JOURNAL: "Proceedings of the VIth International Conference on Vacuum Ultraviolet Radiation Physics." (1 1980). I-16 - I-16.
  • L.J. Brillson, J. Wysocki and F. Luo "Field Effect Spectroscopy of Semiconductor-Insulator Interface States Using Thin Film Transistor Structures." (1 1980). 265 - 265.
  • L.J. Brillson, C.F. Brucker, G. Margaritondo, J. Slowik, and N.G. Stoffel "Photoemission Studies of Atomic Redistribution at Compound Semiconductor Interfaces." (1 1980). N/A - N/A.
  • L.J. Brillson, R.S. Bauer and R.Z. Bachrach "Chemical Bonding at Metal/Si02/Si (111) Interfaces." (1 1980). 221 - 221.

1978

  • L.J. Brillson "Metal-Induced Chemical Reactions and Surface States at GaAs and ZnS Interfaces." (1 1978). 765 - 765.

1976

  • L.J. Brillson "Metal-Induced Surface States on CdS and CdSe." (1 1976). 665 - 665.

1972

  • L.J. Brillson and E. Burstein "Raman Scattering by LO Phonons in Crossed Electric and Magnetic Fields." JOURNAL: "Proceedings of the Eleventh International Conference on the Physics of Semiconductors." (1 1972). 1174 - 1174.

1971

  • L.J. Brillson, E. Burstein, A.A. Maradudin and T. Starke "Frequencies of the Long Wavelength Optical Vibration Modes of Graphite." JOURNAL: "Proceedings of the Conference on Semimetals and Narrow Gap Semiconductors." (1 1971). N/A - N/A.
  • L.J. Brillson and E. Burstein "Surface Electric Field-Induced Raman Scattering in the Cubic IV-VI Compound Semiconductors." JOURNAL: "Proceedings of the 2nd International Conference on Light Scattering in Solids." (1 1971). 320 - 320.
  • L.J. Brillson, A. Pinczuk, E. Burstein and E. Anastassaki "Resonant Raman Scattering by Electron Gas and Lattice Excitations at the Eo+Δo Gap on n-GaAs." JOURNAL: "Proceedings of the 2nd International Conference on Light Scattering in Solids." (1 1971). 115 - 115.

Patents

  • L. J. Brillson, S. Silence. "Patterned Conducting Elements for Development Subsystems." Patent number: U.S. Patent No. 5,643,706
  • Brillson,Leonard,J; Silence,Scott,M; Duggan,Michael,J; Kazakos,Ann,M. "Process for preparing electroconductive members." Patent number: 5643706
  • Brillson,Leonard,J. "Multi-Color Photosensitive Element with Heterojunctions." Patent number: 5138416