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Paul R. Berger

  • Professor, Electrical & Computer Engr.
  • Room #201
    2024 Neil Ave
    Columbus, OH 43210
  • 614-247-6235



Ph.D. 1990, University of Michigan

Areas of interest

Nanoelectronics, Si-based tunneling junctions, optoelectronic devices and integrated circuits, polymer-based photonics and electronics and semiconductor materials.

Advising student groups

  • The Ohio State University, Recruitment and Retention Initiative for Successful Engineers (RISE^OSU) (Service) Advisor
  • The Ohio State University, Solar Education and Outreach (Service) Advisor
  • The Ohio State University, IEEE Graduate Student Body (Academic Interest) Advisor
  • The Ohio State University, IEEE Undergraduate Student Chapter (Academic Interest) Advisor


201 Caldwell




  • 20110101-20141201

    Distinguished Lecturer.

  • 20140501

    Outstanding Engineering Educator, Ohio Society of Professional Engineers.

  • 20140201

    Outstanding Engineering Educator, Franklin County Chapter of Ohio Society of Professional Engineers.

  • 20130401

    Winner at Denman Undergraduate Research Forum.

  • 20120401

    Winner at Denman Undergraduate Research Forum.

  • 20120101

    Finalist, Inventor of the Year.

  • 20110501

    Presidential Fellowship (Ms. Anisha Ramesh).

  • 20110401

    Lumley Research Award.

  • 20110101

    Fellow, Institute of Electrical and Electronics Engineers.

  • 20100101

    Senior Member.

  • 20090601

    Runner-Up in the Best Poster Award. Northwest Shoals Community College.

  • 20090401

    Presidential Fellowship (Mr. Woo-Jun Yoon).

  • 20090401

    Faculty Diversity Excellence Award.

  • 20090101


  • 20080501

    Honorable Mention. John M Patterson State Technical College.

  • 20080101

    Finalist, Inventor of the Year.

  • 20070101


  • 20060401

    Lumley Research Award.

  • 20051201

    Best Student Poster Award.

  • 20031201

    Finalist for Best Student Paper Award.

  • 20000101

    Allan P. Colburn Prize for Best Dissertation in Engineering and Mathematical Sciences.

  • 19990101-20000101

    Nominated, Excellence in Teaching Award.

  • 19980101


  • 19980101

    DARPA Ultra Electronics Program Award of Excellence.

  • 19980101


  • 19970101

    Elected, Senior Member.

  • 19960101-19970101

    Nominated, Excellence in Teaching Award.

  • 19960101

    Faculty Early Career Development Award (CAREER).

  • 19920101




  • 2002. "Doping and Junction Formation." In Survey of semiconductor physics,
  • 2002. "Electrodes." In Survey of semiconductor physics,


  • 1995. "Photoluminescence." In Handbook of Thin Solid Film Process Technology, edited by edited by D. Glocker, Eastman Kodak Research Laboratories, and S. I. Shah, I. I. du Pont de Nemours & Company,


  • 1994. In Optoelectronic Materials Growth and Processing,

Journal Articles


  • Suleimanov, S.K.; Berger, P.; Dyskin, V.G.; Dzhanklich, M.U. et al., 2018, "Increasing the Efficiency of Organic Solar Cells by Antireflection Coatings Based on Fluoride Composites." Technical Physics Letters 44, no. 4, 295-296 - 295-296.


  • Rinne, J.; Keskinen, J.; Berger, P.R.; Lupo, D. et al., 2017, "Feasibility and Fundamental Limits of Energy-Harvesting Based M2M Communications." International Journal of Wireless Information Networks 1-9 - 1-9.
  • Kraft, T.M.; Berger, P.R.; Lupo, D., 2017, "Printed and organic diodes: Devices, circuits and applications." Flexible and Printed Electronics 2, no. 3,


  • Suleimanov, S.K.; Berger, P.; Dyskin, V.G.; Dzhanklich, M.U. et al., 2016, "Antireflection composite coatings for organic solar cells." Applied Solar Energy (English translation of Geliotekhnika) 52, no. 2, 157-158 - 157-158.
  • Berger, P.R.; Chin, A.; Nishiyama, A.; Ieong, M. et al., 2016, "Editorial." IEEE Journal of the Electron Devices Society 4, no. 5, 202 - 202.


  • Ramesh,A; Ren,F; Berger,P,R; CASAL,P; Theiss,A; Gupta,S; Lee,S,C, 2013, "Towards in vivo biosensors for low-cost protein sensing." ELECTRONICS LETTERS 49, no. 7, 450-451 - 450-451.


  • Gupta,Samit,K; Wu,Hao-Hsuan; Kwak,Kwang,J; Casal,Patricia; Nicholson,Theodore,R; Wen,Xuejin; Anisha,R; Bhushan,Bharat; Berger,Paul,R; Lu,Wu; Brillson,Leonard,J; Lee,Stephen,Craig, 2011, "Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces." JOURNAL OF PHYSICS D-APPLIED PHYSICS 44, no. 3, 034010 - 034010.


  • Yoon,Woo-Jun; Jung,Kyung-Young; Liu,Jiwen; Duraisamy,Thirumalai; Revur,Rao; Teixeira,Fernando,L; Sengupta,Suvankar; Berger,Paul,R, 2010, "Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles." SOLAR ENERGY MATERIALS AND SOLAR CELLS 94, no. 2, 128-132 - 128-132.


  • Rommel, S.L.; Jin, N.; Dillon, T.E.; Di Giacomo, S.J. et al., 2000, "Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications." Annual Device Research Conference Digest 159-160 - 159-160.


  • Dashiell, M.W.; Troeger, R.T.; Roe, K.J.; Khan, A.S. et al., 1998, "Electrical and optical properties of phosphorus doped Ge1-yCy." Thin Solid Films 321, no. 1-2, 47-50 - 47-50.


  • Gao, W.; Berger, P.R.; Zydzik, G.J.; O'Bryan, H.M. et al., 1997, "In0.53Ga0.47as MSM photodiodes with transparent CTO schottky contacts and digital superlattice grading." IEEE Transactions on Electron Devices 44, no. 12, 2174-2179 - 2174-2179.
  • Shao, X.; Rommel, S.L.; Orner, B.A.; Kolodzey, J. et al., 1997, "A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy." IEEE Electron Device Letters 18, no. 9, 411-413 - 411-413.


  • Orner, B.A.; Khan, A.; Hits, D.; Chen, F. et al., 1996, "Optical properties of Ge1-yCy alloys." Journal of Electronic Materials 25, no. 2, 297-300 - 297-300.


  • Berger, P., 1995, "Television." SMPTE Journal 104, no. 4, 188-189 - 188-189.


  • Berger, P.R.; Chang, K.H.; Bhattacharya, P.; Singh, J. et al., 1988, "In-situ RHEED studies to understand the dislocation formation process in growth of InGaAs on GaAs." Proceedings of SPIE - The International Society for Optical Engineering 944, 10-13 - 10-13.


  • Brown, E.R.; Zhang, W-D.; Growden, T.A.; Berger, P.R. et al., "Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes."
  • Brown, E.R.; Zhang, W-D.; Growden, T.A.; Berger, P.R. et al., "Strong Band-Edge Light Emission from InGaAs RTDs: Evidence for the Universal Nature of Resonant- and Zener- Co-Tunneling."

Papers in Proceedings


  • Ramesh, A.; Berger, P.R.; Douhard, B.; Vandervorst, W. et al. "200-mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios." (7 2012).


  • Park, S.Y.; Anisha, R.; Jiang, S.; Berger, P.R. et al. "Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition." (12 2009).
  • Yoon, W.J.; Ghosh, Y.; Alberding, B.; Chisholm, M.H. et al. "Efficient organic bulk heterojunction solar cells through near infrared absorbing metallated thiophene complexes." (12 2009).


  • Park, S.Y.; Yu, R.; Chung, S.Y.; Berger, P.R. et al. "Delta-doped Si/SiGe zero-bias backward diodes for micro-wave detection." (12 2007).


  • Yoon, W.J.; Bonifas, A.P.; McCreery, R.L.; Berger, P.R. "Resonant tunneling and room temperature negative differential resistance in TiO2/MEH-PPV junctions for quantum functional circuits." (1 2006).


  • Chung, S.Y.; Yu, R.; Jin, N.; Park, S.Y. et al. "Si-based resonant interband tunnel diode with cutoff frequency over 20 GHz and estimated peak current density of 218 kA/cm2." (12 2005).
  • Sudirgo, S.; Pawlik, D.J.; Rommel, S.L.; Kurinec, S.K. et al. "Analysis of the biasing conditions and latching operation for Si/SiGe resonant interband tunnel diode based tunneling SRAM." (12 2005).
  • Chung, S.Y.; Park, S.Y.; Daulton, J.W.; Yu, R. et al. "Monolithic Si/SiGe HBT-RITD circuit with controllable negative differential resistance for voltage controlled oscillator applications." (12 2005).
  • Pawlik, D.J.; Sudirgo, S.; Kurinec, S.K.; Thompson, P.E. et al. "High temperature characterization of Si/SiGe resonant interband tunnel diodes." (12 2005).
  • Xu, Y.; Berger, P.R.; Cho, J.; Timmons, R.B. "High-k polymerized dichlorotetramethyldisiloxane films deposited by radio frequency pulsed plasma for gate dielectrics in polymer field effect transistors." (12 2005).
  • Park, S.Y.; Chung, S.Y.; Yu, R.; Berger, P.R. et al. "Low sidewall damage plasma etching with ICP-RIE and HBr chemistry of Si/SiGe resonant interband tunnel diodes." (12 2005).


  • Jin, N.; Liu, D.; Chung, S.Y.; Yu, R. et al. "A combined model for Si-based resonant interband tunneling diodes grown on SOI." (12 2004).
  • Sudirgo, S.; Vega, R.; Nandgaonkar, R.P.; Hirschman, K.D. et al. "Overgrown Si/SiGe resonant interband tunnel diodes for integration with CMOS." (12 2004).


  • Sudirgo, S.; Nandgaonkar, R.P.; Curanovic, B.; Hebding, J. et al. "Monolithically integrated Si/SiGe resonant interband tunneling dioded/CMOS MOBILE latch with high voltage swing." (1 2003).


  • Jin,N; Rice,A,T; Berger,P,R; Thompson,P,E; Chi,P,H; Simons,D,S "SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes." in IEEE Lester Eastman Conference on High Performance Devices. (1 2002).


  • Berger,P,R "Metal-semiconductor-metal photodetectors." in Conference on Testing, Reliability, and Applications of Optoelectronic Devices. (1 2001).
  • Kempisty,J,J; Hirschman,K,D; Kurinec,S,K; Jin,N; Chung,S,Y; Berger,P,R; Thompson,P,E "Integration of silicon-based tunnel diodes with CMOS: An RIT-OSU-NRL-NSF effort." in 14th Biennial University/Government/Industry Microelectronics Symposium. (1 2001).


  • Wright,N; Khan,A,T; Berger,P,R; Guarin,F,J; Iyer,S,S "Photoluminescence of SiSnC alloys grown on (100) Si substrates." in Materials-Research-Society Symposium on Epitaxy and Applications of Si-Based Heterostructures. (1 1998).


  • Khan,A,ST; Berger,P,R; Guarin,F,J; Iyer,S,S "Near band edge photoluminescence from pseudomorphic tensially strained Si0.985C0.015 alloy." in European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices. (2 1997).


  • Vaccaro,K; Spaziani,S,M; Dauplaise,H,M; Berger,P,R; Davis,A; TSACOYEANES,C,W; Martin,E,A; Lorenzo,J,P "Inverted, substrate-removed MSM and schottky diode optical detectors." in 8th International Conference on Indium Phosphide and Related Materials. (1 1996).


  • Kolodzey,J; Berger,P,R; Orner,B,A; Hits,D; Chen,F; Khan,A; Shao,X; Waite,M,M; Shah,S,I; Swann,C,P; Unruh,K,M "Optical and electronic properties of SiGeC alloys grown on Si substrate." in 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference. (12 1995).


  • Nichols, D.T.; Lopata, J.; Hobson, W.S.; Berger, P.R. et al. "Integrated-optical-receivers and transmitters for use in wide-bandwidth optical transmission systems." (1 1994).
  • Gao, W.; Khan, A.S.; Berger, P.R.; Hunsperger, R. et al. "Long wavelength metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky contacts." (12 1994).


  • Lai, W.Q.; Berger, P.R.; Bhattacharya, P.; Zebda, Y. et al. "Monolithically integrated In0.53Ga0.47As/In0.52Al0.48As front-end photoreceivers realized by molecular beam epitaxy and regrowth techniques." (12 1990).


  • Chen, Y.; Berger, P.R.; Bhattacharya, P.; Pamulapati, J. et al. "Nonlinear all-optical modulation in a GaAs/AlGaAs multiple quantum well vertical direction coupler.." (12 1988).