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Paul R. Berger

  • Professor, Physics
  • Professor, Electrical & Computer Engr.
  • Room #201
    2024 Neil Ave
    Columbus, OH 43210
  • 614-247-6235

About

Education

Ph.D. 1990, University of Michigan

Areas of interest

Nanoelectronics, Si-based tunneling junctions, optoelectronic devices and integrated circuits, polymer-based photonics and electronics and semiconductor materials.

Advising student groups

  • The Ohio State University, Recruitment and Retention Initiative for Successful Engineers (RISE^OSU) (Service) Advisor
  • The Ohio State University, Solar Education and Outreach (Service) Advisor
  • The Ohio State University, IEEE Graduate Student Body (Academic Interest) Advisor
  • The Ohio State University, IEEE Undergraduate Student Chapter (Academic Interest) Advisor

Office

201 Caldwell

 

 

Honors

  • 2011-2014

    Distinguished Lecturer. .

  • 2014

    Outstanding Engineering Educator, Franklin County Chapter of Ohio Society of Professional Engineers. .

  • 2014

    Outstanding Engineering Educator, Ohio Society of Professional Engineers. .

  • 2013

    Winner at Denman Undergraduate Research Forum. .

  • 2012

    Finalist, Inventor of the Year. .

  • 2012

    Winner at Denman Undergraduate Research Forum. .

  • 2011

    Lumley Research Award. .

  • 2011

    Presidential Fellowship (Ms. Anisha Ramesh). .

  • 2011

    Fellow, Institute of Electrical and Electronics Engineers. .

  • 2010

    Senior Member. .

  • 2009

    Runner-Up in the Best Poster Award. .

  • 2009

    Presidential Fellowship (Mr. Woo-Jun Yoon). .

  • 2009

    Faculty Diversity Excellence Award. .

  • 2009

    Recognized. .

  • 2008

    Finalist, Inventor of the Year. .

  • 2008

    Honorable Mention. .

  • 2007

    Recognized. .

  • 2006

    Lumley Research Award. .

  • 2005

    Best Student Poster Award. .

  • 2003

    Finalist for Best Student Paper Award. .

  • 2000

    Allan P. Colburn Prize for Best Dissertation in Engineering and Mathematical Sciences. University of Michigan.

  • 1999-2000

    Nominated, Excellence in Teaching Award.

  • 1998

    Fellow. .

  • 1998

    Recognized. .

  • 1998

    DARPA Ultra Electronics Program Award of Excellence.

  • 1996-1997

    Nominated, Excellence in Teaching Award.

  • 1997

    Elected, Senior Member. .

  • 1996

    Faculty Early Career Development Award (CAREER).

  • 1992

    Recognized. .

Chapters

2002

  • Paul R. Berger. 2002. "Doping and Junction Formation." In Survey of semiconductor physics, New York: Wiley.
  • Paul R. Berger. 2002. "Electrodes." In Survey of semiconductor physics, New York: Wiley.

1995

  • Paul R. Berger. 1995. "Photoluminescence." In Handbook of Thin Solid Film Process Technology, edited by edited by D. Glocker, Eastman Kodak Research Laboratories, and S. I. Shah, I. I. du Pont de Nemours & Company, pp. D2.4:1 - D2.4:8. Philadelphia, PA: Institute of Physics.

1994

  • Gao, Wei; Khan, Al-Sameen; Berger, Paul R.; Hunsperger, Robert; Zydzik, George; O'Bryan, H. M.; Sivco, D.; Cho, A. Y.. 1994. In Optoelectronic Materials Growth and Processing, IEEE, Piscataway, NJ, USA.

Journal Articles

2013

  • Ramesh,A; Ren,F; Berger,P,R; CASAL,P; Theiss,A; Gupta,S; Lee,S,C, 2013, "Towards in vivo biosensors for low-cost protein sensing." ELECTRONICS LETTERS 49, no. 7, 450 - 451.
  • Berger,Paul, 2013, "interview." ELECTRONICS LETTERS 49, no. 7, 436 - 436.
  • Berger,Paul,R; Ramesh,Anisha; Loo,Roger, 2013, "Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor Deposition." ULSI PROCESS INTEGRATION 8 58, no. 9, 81 - 88.

2012

  • Morrison,J,T; Storm,M; Chowdhury,E; Akli,K,U; Feldman,S; Willis,C; Daskalova,R,L; Growden,T; Berger,P; Ditmire,T; Van Woerkom,L; Freeman,R,R, 2012, "Selective deuteron production using target normal sheath acceleration." PHYSICS OF PLASMAS 19, no. 3, 030707 -
  • Ramesh,Anisha; Growden,Tyler,A; Berger,Paul,R; Loo,Roger; Vandervorst,Wilfried; Douhard,Bastien; Caymax,Matty, 2012, "Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition." IEEE TRANSACTIONS ON ELECTRON DEVICES 59, no. 3, 602 - 609.
  • Ramesh,Anisha; Berger,Paul,R; Loo,Roger, 2012, "High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition." APPLIED PHYSICS LETTERS 100, no. 9, 092104 -

2011

  • Gupta,Samit,K; Wu,Hao-Hsuan; Kwak,Kwang,J; Casal,Patricia; Nicholson,Theodore,R; Wen,Xuejin; Anisha,R; Bhushan,Bharat; Berger,Paul,R; Lu,Wu; Brillson,Leonard,J; Lee,Stephen,Craig, 2011, "Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces." JOURNAL OF PHYSICS D-APPLIED PHYSICS 44, no. 3, 034010 -
  • Ramesh,Anisha; Park,Si-Young; Berger,Paul,R, 2011, "90 nm x 32 32 bit Tunneling SRAM Memory Array With 0.5 ns Write Access Time, 1 ns Read Access Time and 0.5 V Operation." IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS 58, no. 10, 2432 - 2445.

2010

  • Park,Si-Young; Di Giacomo,Sandro,J; Anisha,R; Berger,Paul,R; Thompson,Phillip,E; Adesida,Ilesanmi, 2010, "Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6:C4F8 and self-limiting thermal oxidation on Si substrate." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 28, no. 4, 763 - 768.
  • Yoon,Woo-Jun; Jung,Kyung-Young; Liu,Jiwen; Duraisamy,Thirumalai; Revur,Rao; Teixeira,Fernando,L; Sengupta,Suvankar; Berger,Paul,R, 2010, "Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles." SOLAR ENERGY MATERIALS AND SOLAR CELLS 94, no. 2, 128 - 132.
  • Yoon,Woo-Jun; Berger,Paul,R, 2010, "Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors." ORGANIC ELECTRONICS 11, no. 11, 1719 - 1722.
  • Yoon,Woo-Jun; Bhattacharyya,Dhiman; Timmons,Richard,B; Berger,Paul,R, 2010, "Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistors." ORGANIC ELECTRONICS 11, no. 11, 1767 - 1771.

2009

  • Thompson,P,E; Jernigan,G,G; Park,S-Y; Yu,R; Anisha,R; Berger,P,R; Pawlik,D; Krom,R; Rommel,S,L, 2009, "P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance." ELECTRONICS LETTERS 45, no. 14, 759 - 760.
  • Yu,Ronghua; Anisha,R; Jin,Niu; Chung,Sung-Yong; Berger,Paul,R; Gramila,Thomas,J; Thompson,Phillip,E, 2009, "Observation of strain in pseudomorphic Si1-xGex by tracking phonon participation in Si/SiGe resonant interband tunnel diodes via electron tunneling spectroscopy." JOURNAL OF APPLIED PHYSICS 106, no. 3, 034501 -
  • Park,Si-Young; Anisha,R; Berger,Paul,R; Loo,Roger; Nguyen,Ngoc,Duy; Takeuchi,Shotaro; Caymax,Matty, 2009, "Si/SiGe Resonant Interband Tunneling Diodes Incorporating delta-Doping Layers Grown by Chemical Vapor Deposition." IEEE ELECTRON DEVICE LETTERS 30, no. 11, 1173 - 1175.

2008

  • Jin,Niu; Yu,Ronghua; Chung,Sung-Yong; Berger,Paul,R; Thompson,Phillip,E, 2008, "Strain-engineered Si/SiGe resonant interband tunneling diodes grown on Si0.8Ge0.2 virtual substrates with strained Si cladding layers." IEEE ELECTRON DEVICE LETTERS 29, no. 6, 599 - 602.
  • Bhattacharyya,Dhiman; Yoon,Woo-Jun; Berger,Paul,R; Timmons,Richard,B, 2008, "Plasma-polymerized multistacked organic bipolar films: A new approach to flexible high-k dielectrics." ADVANCED MATERIALS 20, no. 12, 2383 - ?.
  • Anisha,R; Jin,Niu; Chung,Sung-Yong; Yu,Ronghua; Berger,Paul,R; Thompson,Phillip,E, 2008, "Strain engineered Si/SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates." APPLIED PHYSICS LETTERS 93, no. 10, 102113 -
  • Yoon,Woo-Jun; Berger,Paul,R, 2008, "4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1 : 0.8) bulk heterojunction photovoltaic devices with plasma treated AgOx/indium tin oxide anode modification." APPLIED PHYSICS LETTERS 92, no. 1, 013306 -
  • Yoon,Woo-Jun; Orlove,Scott,B; Olmon,Robert,L; Berger,Paul,R, 2008, "Enhanced emission using thin Li-halide cathodic interlayers for improved injection into poly(p-phenylene vinylene) derivative PLEDs." ELECTROCHEMICAL AND SOLID STATE LETTERS 11, no. 10, J76 - J78.

2007

  • Tresback,Jason,S; Vasiliev,Alexander,L; Padture,Nitin,P; Park,Si-Young; Berger,Paul,R, 2007, "Characterization and electrical properties of individual Au-NiO-Au heterojunction nanowires." IEEE TRANSACTIONS ON NANOTECHNOLOGY 6, no. 6, 676 - 681.
  • Park,S-Y; Yu,R; Chung,S-Y; Berger,P,R; Thompson,Pe; Fay,P, 2007, "Sensitivity of Si-based zero-bias backward diodes for microwave detection." ELECTRONICS LETTERS 43, no. 5, 295 - 296.
  • Chung,Sung-Yong; Jin,Niu; Pavlovicz,Ryan,E; Berger,Paul,R; Thompson,Phillip,E, 2007, "Analysis of the voltage swing for logic and memory applications in Si/SiGe resonant interband tunnel diodes grown by molecular beam epitaxy." IEEE TRANSACTIONS ON NANOTECHNOLOGY 6, no. 2, 158 - 163.

2006

  • Chung, Sung-Yong; Yu, Ronghua; Jin, Niu; Park, Si-Young; Berger, Paul R.; Thompson, Phillip E., 2006, "Si/SiGe resonant interband tunnel diode with f$-r0$/ 20.2 GHz and peak current density 218 kA/cm$+2$/ for K-band mixed-signal applications." IEEE Electron Device Letters 27, no. 5, 364 - 367.
  • Park,S-Y; Chung,S-Y; Yu,R; Berger,P,R; Thompson,P,E, 2006, "Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si/SiGe resonant interband tunnel diodes." ELECTRONICS LETTERS 42, no. 12, 719 - 721.
  • Jin,Niu; Chung,Sung-Yong; Yu,Ronghua; Heyns,Roux,M; Berger,Paul,R; Thompson,Phillip,E, 2006, "The effect of spacer thicknesses on Si-based resonant interband tunneling diode performance and their application to low-power tunneling diode SRAM circuits." IEEE TRANSACTIONS ON ELECTRON DEVICES 53, no. 9, 2243 - 2249.
  • Xu,Y; Berger,P,R; Cho,J; Timmons,R,B, 2006, "Pulsed plasma polymerized dichlorotetramethyldisiloxane high-k gate dielectrics for polymer field-effect transistors." JOURNAL OF APPLIED PHYSICS 99, no. 1, 014104 -

2005

  • Jin,N; Chung,S,Y; Yu,R,H; Di Giacomo,S,J; Berger,P,R; Thompson,P,E, 2005, "RF performance and modeling of Si/SiGe resonant interband tunneling diodes." IEEE TRANSACTIONS ON ELECTRON DEVICES 52, no. 10, 2129 - 2135.
  • Jin, Niu; Yu, Ronghua; Chung, Sung-Yong; Berger, Paul R.; Thompson, Phillip E.; Fay, Patrick, 2005, "High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance." IEEE Electron Device Letters 26, no. 8, 575 - 578.
  • Jin,N; Chung,S,Y; Yu,R; Berger,P,R; Thompson,P,E, 2005, "Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes." ELECTRONICS LETTERS 41, no. 9, 559 - 560.
  • Yoon,W,J; Chung,S,Y; Berger,P,R; Asar,S,M, 2005, "Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic." APPLIED PHYSICS LETTERS 87, no. 20, 203506 -

2004

  • Xu,Y,F; Berger,P,R; Wilson,J,N; Bunz,U,HF, 2004, "Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection." APPLIED PHYSICS LETTERS 85, no. 18, 4219 - 4221.
  • Weaver,B,D; Thompson,P,E; Jin,N; Chung,S,Y; Rice,A,T; Berger,P,R, 2004, "Radiation tolerance of Si/Si0.6Ge0.4 resonant interband tunneling diodes." JOURNAL OF APPLIED PHYSICS 95, no. 11, 6406 - 6408.
  • Chung, Sung-Yong; Jin, Niu; Berger, Paul R.; Yu, Ronghua; Thompson, Phillip E.; Lake, Roger; Rommel, Sean L.; Kurinec, Santosh K., 2004, "Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration." Applied Physics Letters 84, no. 14, 2688 - 2690.
  • Chung,S,Y; Jin,N; Pavlovicz,R,E; Berger,P,R; Yu,R,H; Fang,Z,Q; Thompson,P,E, 2004, "Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy." JOURNAL OF APPLIED PHYSICS 96, no. 1, 747 - 753.
  • Jin,N; Chling,S,Y; Yu,R; Berger,P,R; Thompson,P,E, 2004, "Improved vertically stacked Si/SiGe resonant interband tunnel diode pair with small peak voltage shift and unequal peak currents." ELECTRONICS LETTERS 40, no. 24, 1548 - 1550.
  • Xu,Y,F; Berger,P,R; Cho,J; Timmons,R,B, 2004, "Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors." JOURNAL OF ELECTRONIC MATERIALS 33, no. 10, 1240 - 1247.
  • Jin,N; Chung,S,Y; Heyns,R,M; Berger,P,R; Yu,R,H; Thompson,P,E; Rommel,S,L, 2004, "Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR." IEEE ELECTRON DEVICE LETTERS 25, no. 9, 646 - 648.
  • Xu, Yifan; Berger, Paul R., 2004, "High electric-field effects on short-channel polythiophene polymer field-effect transistors." Journal of Applied Physics 95, no. 3, 1497 - 1501.

2003

  • Sudirgo, Stephen; Curanovic, Branislav; Rommel, Sean L.; Hirschman, Karl D.; Kurinec, Santosh K.; Jin, Niu; Rice, Anthony T.; Berger, Paul R.; Thompson, Phillip E., 2003, "Challenges in integration of resonant interband tunnel devices with CMOS." Biennial University/Government/Industry Microelectronics Symposium - Proceedings
  • Jin, Niu; Chung, Sung-Yong; Rice, Anthony T.; Berger, Paul R.; Yu, Ronghua; Thompson, Phillip E.; Lake, Roger, 2003, "151 kA/cm$+2$/ peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications." Applied Physics Letters 83, no. 16, 3308 - 3310.
  • Jin, Niu; Chung, Sung-Yong; Rice, Anthony T.; Berger, Paul R.; Thompson, Phillip E.; Rivas, Cristian; Lake, Roger; Sudirgo, Stephen; Kempisty, Jeremy J.; Curanovic, Branislav; Rommel, Sean L.; Hirschman, Karl D.; Kurinec, Santosh K.; Chi, Peter H.; Simons, David S., 2003, "Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions." IEEE Transactions on Electron Devices 50, no. 9, 1876 - 1884.
  • Chung, Sung-Yong; Jin, Niu; Rice, Anthony T.; Berger, Paul R.; Yu, Ronghua; Thompson, Phillip E.; Fang, Z. -Q., 2003, "Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy." Journal of Applied Physics 93, no. 11, 9104 - 9110.
  • Rivas, Cristian; Lake, Roger; Frensley, William R.; Klimeck, Gerhard; Thompson, Phillip E.; Hobart, Karl D.; Rommel, Sean L.; Berger, Paul R., 2003, "Full band modeling of the excess current in a delta-doped silicon tunnel diode." Journal of Applied Physics 94, no. 8, 5005 - 5013.
  • Word,M,J; Adesida,I; Berger,P,R, 2003, "Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21, no. 6, L12 - L15.

2002

  • Chung, Sung-Yong; Berger, Paul R.; Thompson, Phillip E.; Fang, Z. -Q., 2002, "Growth temperature effects on deep-levels in Si grown by low temperature molecular beam epitaxy." Materials Research Society Symposium - Proceedings 745,

2001

  • Hobart,K,D; Thompson,P,E; Rommel,S,L; Dillon,T,E; Berger,P,R; Simons,D,S; Chi,P,H, 2001, ""p-on-n" Si interband tunnel diode grown by molecular beam epitaxy." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 19, no. 1, 290 - 293.
  • Rivas,C; Lake,R; Klimeck,G; Frensley,W,R; Fischetti,M,V; Thompson,P,E; Rommel,S,L; Berger,P,R, 2001, "Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts." APPLIED PHYSICS LETTERS 78, no. 6, 814 - 816.
  • Jin,N; Berger,P,R; Rommel,S,L; Thompson,P,E; Hobart,K,D, 2001, "pnp Si resonant interband tunnel diode with symmetrical NDR." ELECTRONICS LETTERS 37, no. 23, 1412 - 1414.

2000

  • Dashiell, Michael W.; Troeger, Ralph T.; Rommel, Sean L.; Adam, Thomas N.; Berger, Paul R.; Guedj, C.; Kolodzey, James; Seabaugh, Alan C.; Lake, R., 2000, "Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing." IEEE Transactions on Electron Devices 47, no. 9, 1707 - 1714.

1999

  • Prather, Dennis W.; Liccone, Michael L.; LeCompte, Marion; Gao, Xiang; McMonagle, Brian; Doyle, Richard; Berger, Paul R.; Rommel, Sean, 1999, "Optically interconnected static-RAM for instruction level parallel processors." Proceedings of SPIE - The International Society for Optical Engineering 3632,
  • Thompson,P,E; Hobart,K,D; Twigg,M,E; Jernigan,G,G; Dillon,T,E; Rommel,S,L; Berger,P,R; Simons,D,S; Chi,P,H; Lake,R; Seabaugh,A,C, 1999, "Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy." APPLIED PHYSICS LETTERS 75, no. 9, 1308 - 1310.
  • Rommel, Sean L.; Dillon, Thomas E.; Berger, Paul R.; Thompson, Phillip E.; Hobart, Karl D.; Lake, Roger; Seabaugh, Alan C., 1999, "Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities." IEEE Electron Device Letters 20, no. 7, 329 - 331.
  • Shao,X,P; Jonczyk,R; Dashiell,M; Hits,D; Orner,B,A; Khan,A,S; Roe,K; Kolodzey,J; Berger,P,R; Kaba,M; Barteau,M,A; Unruh,K,M, 1999, "Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots." JOURNAL OF APPLIED PHYSICS 85, no. 1, 578 - 582.

1998

  • Rommel,S,L; Dillon,T,E; Dashiell,M,W; Feng,H; Kolodzey,J; Berger,P,R; Thompson,P,E; Hobart,K,D; Lake,R; Seabaugh,A,C; Klimeck,G; Blanks,D,K, 1998, "Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes." APPLIED PHYSICS LETTERS 73, no. 15, 2191 - 2193.
  • Shao,X,P; Rommel,S,L; Orner,B,A; Feng,H; Dashiell,M,W; Troeger,R,T; Kolodzey,J; Berger,P,R; Laursen,T, 1998, "1.3 mu m photoresponsivity in Si-based Ge1-xCx photodiodes." APPLIED PHYSICS LETTERS 72, no. 15, 1860 - 1862.
  • Rommel, Sean L.; Dillon, Thomas E.; Berger, Paul R.; Lake, Roger; Thompson, Phillip E.; Hobart, Karl D.; Seabaugh, Alan C.; Simons, David S., 1998, "Si-based interband tunneling devices for high-speed logic and low power memory applications." Technical Digest - International Electron Devices Meeting

1997

  • Shao,X,P; Rommel,S,L; Orner,B,A; Kolodzey,J; Berger,P,R, 1997, "p-Ge_1-x/C_x//n-Si heterojunction diode grown by molecular beam epitaxy." IEEE Electron Device Letters 18, no. 9, 411 - 413.
  • Shao,X,P; Rommel,S,L; Omer,B,A; Berger,P,R; Kolodzey,J; Unruh,K,M, 1997, "Low resistance ohmic contacts to p-Ge_1-x/C_x/ on Si." IEEE Electron Device Letters 18, no. 1, 7 - 9.
  • Gao,W; Berger,P,R; Zydzik,G,J; OBRYAN,H,M; Sivco,D,L; Cho,A,Y, 1997, "In0.53Ca0.47As MSM photodiodes with transparent CTO Schottky contacts and digital superlattice grading." IEEE TRANSACTIONS ON ELECTRON DEVICES 44, no. 12, 2174 - 2179.

1996

  • Khan,A,ST; Berger,P,R; Guarin,F,J; Iyer,S,S, 1996, "Band-edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy." APPLIED PHYSICS LETTERS 68, no. 22, 3105 - 3107.
  • Pamulapati,J; Bhattacharya,P,K; Singh,J; Berger,P,R; Snyder,C,W; Orr,B,G; Tober,R,L, 1996, "Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1-xAs/GaAs system." JOURNAL OF ELECTRONIC MATERIALS 25, no. 3, 479 - 483.
  • Orner,B,A; Khan,A; Hits,D; Chen,F; Roe,K; Pickett,J; Shao,X; Wilson,R,G; Berger,P,R; Kolodzey,J, 1996, "Optical properties of Ge1-yCy alloys." JOURNAL OF ELECTRONIC MATERIALS 25, no. 2, 297 - 300.
  • Chen,F; Orner,B,A; Guerin,D; Khan,A; Berger,P,R; Shah,S,I; Kolodzey,J, 1996, "Current transport characteristics of SiGeC/Si heterojunction diode." IEEE ELECTRON DEVICE LETTERS 17, no. 12, 589 - 591.
  • Berger, Paul R., 1996, "MSM photodiodes." IEEE Potentials 15, no. 2,
  • Gao, Wei; Berger, Paul R.; Hunsperger, Robert G.; Pamulapati, Jagadeesh; Lareau, Richard T., 1996, "Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment." Proceedings of SPIE - The International Society for Optical Engineering 2685, 7094 - 7103.

1995

  • Gao,W; Berger,P,R; Hunsperger,R,G; Zydzik,G; RHODES,W,W; OBRYAN,H,M; Sivco,D; Cho,A,Y, 1995, "TRANSPARENT AND OPAQUE SCHOTTKY CONTACTS ON UNDOPED IN0.52AL0.48AS GROWN BY MOLECULAR-BEAM EPITAXY." APPLIED PHYSICS LETTERS 66, no. 25, 3471 - 3473.

1994

  • Nichols,D,T; Lopata,J; Hobson,W,S; Dutta,N,K; Berger,P,R; Sivco,D,L; Cho,A,Y, 1994, "MONOLITHIC GAAS/ALGAAS OPTICAL TRANSMITTER CIRCUIT USING A SINGLE GROWTH STEP." ELECTRONICS LETTERS 30, no. 6, 490 - 491.
  • Berger,P,R; Chu,S,NG; Logan,R,A; Byrne,E; Coblentz,D; Lee,J; Ha,N,T; Dutta,N,K, 1994, "SUBSTRATE ORIENTATION EFFECTS ON DOPANT INCORPORATION IN INP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION (VOL 73, PG 4095, 1993)." JOURNAL OF APPLIED PHYSICS 76, no. 4, 2562 - 2562.
  • Gao,W; Khan,A,S; Berger,P,R; Hunsperger,R,G; Zydzik,G; OBRYAN,H,M; Sivco,D; Cho,A,Y, 1994, "IN0.53GA0.47AS METAL-SEMICONDUCTOR-METAL PHOTODIODES WITH TRANSPARENT CADMIUM TIN OXIDE SCHOTTKY CONTACTS." APPLIED PHYSICS LETTERS 65, no. 15, 1930 - 1932.

1993

  • Berger, Paul R.; Dutta, Niloy K.; Humphrey, Dexter A.; Smith, Peter R.; Wang, Shuenn-Jyi; Montgomery, R. K.; Sivco, D.; Cho, A. Y., 1993, "8-Element linear array monolithic p-i-n MODFET photoreceivers using molecular beam epitaxial regrowth." IEEE Photonics Technology Letters 5, no. 1, 63 - 66.
  • Berger,P,R; Chu,S,NG; Logan,R,A; Byrne,E; Coblentz,D; Lee,J; Ha,N,T; Dutta,N,K, 1993, "SUBSTRATE ORIENTATION EFFECTS ON DOPANT INCORPORATION IN INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION." JOURNAL OF APPLIED PHYSICS 73, no. 8, 4095 - 4097.
  • Nichols,D; Dutta,N,K; Berger,P,R; Smith,P,R; Sivco,D; Cho,A,Y, 1993, "MONOLITHIC GAAS/ALGAAS PIN MESFET PHOTORECEIVER USING A SINGLE MOLECULAR-BEAM EPITAXY GROWTH STEP." ELECTRONICS LETTERS 29, no. 12, 1133 - 1134.
  • Dutta,N,K; Lopata,J; Berger,P,R; Wang,S,J; Smith,P,R; Sivco,D,L; Cho,A,Y, 1993, "10 GHZ BANDWIDTH MONOLITHIC P-I-N MODULATION-DOPED FIELD-EFFECT TRANSISTOR PHOTORECEIVER." APPLIED PHYSICS LETTERS 63, no. 15, 2115 - 2116.

1992

  • Lopata, John; Dutta, Niloy K.; Hobson, William S.; Berger, Paul R., 1992, "Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates." Proceedings of SPIE - The International Society for Optical Engineering 1676,
  • Berger, Paul R.; Dutta, Niloy K.; Humphrey, Dexter A.; Smith, Peter R.; Wang, Shuenn-Jyi; Montgomery, R. K.; Sivco, D.; Cho, A. Y., 1992, "1.0 GHz monolithic p-i-n MODFET photoreceiver using molecular beam epitaxial regrowth." IEEE Photonics Technology Letters 4, no. 8, 891 - 894.
  • Berger,P,R; Dutta,N,K; Zydzik,G; OBRYAN,H,M; Keller,U; Smith,P,R; Lopata,J; Sivco,D; Cho,A,Y, 1992, "IN0.53GA0.47AS P-I-N PHOTODIODES WITH TRANSPARENT CADMIUM TIN OXIDE CONTACTS." APPLIED PHYSICS LETTERS 61, no. 14, 1673 - 1675.

1991

  • Dutta,N,K; Lopata,J; Berger,P,R; Sivco,D,L; Cho,A,Y, 1991, "PERFORMANCE-CHARACTERISTICS OF GAINAS/GAAS LARGE OPTICAL CAVITY QUANTUM-WELL LASERS." ELECTRONICS LETTERS 27, no. 8, 680 - 682.
  • Chand, Naresh; Berger, Paul R.; Dutta, Niloy K., 1991, "Effects of substrate tilting in substantial improvement of DC performance of AlGaAs/GaAs n-p-n DHBT's grown by MBE." IEEE Transactions on Electron Devices 38, no. 12,
  • Chand,N; Berger,P,R; Dutta,N,K, 1991, "SUBSTANTIAL IMPROVEMENT BY SUBSTRATE MISORIENTATION IN DC PERFORMANCE OF AL0.5GA0.5AS/GAAS/AL0.5GA0.5AS DOUBLE-HETEROJUNCTION NPN BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY." APPLIED PHYSICS LETTERS 59, no. 2, 186 - 188.
  • Berger,P,R; Dutta,N,K; Lopata,J; Chu,S,NG; Chand,N, 1991, "MONOLITHIC INTEGRATION OF GAAS AND IN0.2GA0.8AS LASERS BY MOLECULAR-BEAM EPITAXY ON GAAS." APPLIED PHYSICS LETTERS 58, no. 23, 2698 - 2700.
  • Berger, Paul R.; Bhattacharya, Pallab K.; Gupta, Shantanu, 1991, "A waveguide directional coupler with a nonlinear coupling medium." IEEE Journal of Quantum Electronics 27, no. 3, 788 - 795.
  • Berger,P,R; Chand,N; Dutta,N,K, 1991, "AN ALGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY." APPLIED PHYSICS LETTERS 59, no. 9, 1099 - 1101.
  • Zebda, Yousef; Lai, Richard; Bhattacharya, Pallab; Pavlidis, Dimitris; Berger, Paul R.; Brock, Timothy L., 1991, "Monolithically integrated InP-based front-end photoreceivers." IEEE Transactions on Electron Devices 38, no. 6, 1324 - 1333.
  • Berger,P,R; Dutta,N,K; Sivco,D,L; Cho,A,Y, 1991, "GAAS QUANTUM-WELL LASER AND HETEROJUNCTION BIPOLAR-TRANSISTOR INTEGRATION USING MOLECULAR-BEAM EPITAXIAL REGROWTH." APPLIED PHYSICS LETTERS 59, no. 22, 2826 - 2828.
  • Berger,P,R; Dutta,N,K; Choquette,K,D; Hasnain,G; Chand,N, 1991, "MONOLITHICALLY PELTIER-COOLED VERTICAL-CAVITY SURFACE-EMITTING LASERS." APPLIED PHYSICS LETTERS 59, no. 1, 117 - 119.

1990

  • Pamulapati,J; Lai,R; Ng,G,I; Chen,Y,C; Berger,P,R; Bhattacharya,P,K; Singh,J; Pavlidis,D, 1990, "THE RELATION OF THE PERFORMANCE-CHARACTERISTICS OF PSEUDOMORPHIC IN0.53+XGA0.47-XAS/IN0.52AL0.48AS(0-LESS-THAN-X-LESS-THAN-0.32) MODULATION-DOPED FIELD-EFFECT TRANSISTORS TO MOLECULAR-BEAM EPITAXIAL-GROWTH MODES." JOURNAL OF APPLIED PHYSICS 68, no. 1, 347 - 350.

1989

  • Biswas,D; Berger,P,R; Das,U; Oh,J,E; Bhattacharya,P,K, 1989, "INVESTIGATION OF THE INTERFACE REGION PRODUCED BY MOLECULAR-BEAM EPITAXIAL REGROWTH." JOURNAL OF ELECTRONIC MATERIALS 18, no. 2, 137 - 142.
  • Pamulapati,J; Berger,P; Chang,K; Oh,J; Chen,Y; Singh,J; Bhattacharya,P; Gibala,R, 1989, "GROWTH PHENOMENA AND CHARACTERISTICS OF STRAINED INXGA1-XAS ON GAAS." JOURNAL OF CRYSTAL GROWTH 95, no. 1-4, 193 - 196.
  • Biswas,D; Berger,P,R; Bhattacharya,P, 1989, "RECOMBINATION VELOCITY AT MOLECULAR-BEAM-EPITAXIAL GAAS REGROWN INTERFACES." JOURNAL OF APPLIED PHYSICS 65, no. 6, 2571 - 2573.

1988

  • Berger,P,R; Chen,Y; Bhattacharya,P; Pamulapati,J; Vezzoli,G,C, 1988, "DEMONSTRATION OF ALL-OPTICAL MODULATION IN A VERTICAL GUIDED-WAVE NONLINEAR COUPLER." APPLIED PHYSICS LETTERS 52, no. 14, 1125 - 1127.
  • Das,U; Chen,Y; Bhattacharya,P,K; Berger,P,R, 1988, "ORIENTATION-DEPENDENT PHASE MODULATION IN INGAAS/GAAS MULTIQUANTUM WELL WAVE-GUIDES." APPLIED PHYSICS LETTERS 53, no. 22, 2129 - 2131.
  • Berger,P,R; Chang,K; Bhattacharya,P; Singh,J; Bajaj,K,K, 1988, "ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME." APPLIED PHYSICS LETTERS 53, no. 8, 684 - 686.

1987

  • Chang,K,H; Berger,P,R; Singh,J; Bhattacharya,P,K, 1987, "MOLECULAR-BEAM EPITAXIAL-GROWTH AND LUMINESCENCE OF INXGA1-XAS/INXAL1-XAS MULTIQUANTUM WELLS ON GAAS." APPLIED PHYSICS LETTERS 51, no. 4, 261 - 263.
  • JUANG,F,Y; Hong,W,P; Berger,P,R; Bhattacharya,P,K; Das,U; Singh,J, 1987, "GROWTH AND PROPERTIES OF IN0.52AL0.48AS/IN0.53GA0.47AS, GAAS-IN AND INGAAS GAAS MULTILAYERS." JOURNAL OF CRYSTAL GROWTH 81, no. 1-4, 373 - 377.
  • Berger,P,R; Bhattacharya,P,K; Singh,J, 1987, "COMPARATIVE-STUDY OF THE GROWTH-PROCESSES OF GAAS, ALGAAS, INGAAS, AND INALAS LATTICE MATCHED AND NONLATTICE MATCHED SEMICONDUCTORS USING HIGH-ENERGY ELECTRON-DIFFRACTION." JOURNAL OF APPLIED PHYSICS 61, no. 8, 2856 - 2860.

1986

  • Bhattacharya,P,K; Dhar,S; Berger,P; JUANG,F,Y, 1986, "LOW DEFECT DENSITIES IN MOLECULAR-BEAM EPITAXIAL GAAS ACHIEVED BY ISOELECTRONIC IN DOPING." APPLIED PHYSICS LETTERS 49, no. 8, 470 - 472.

Papers in Proceedings

2006

  • Chung,Sung-Yong; Park,Si-Young; Daulton,Jeffrey,W; Yu,Ronghua; Berger,Paul,R; Thompson,Phillip,E "Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications." JOURNAL: "SOLID-STATE ELECTRONICS." in International Semiconductor Device Research Symposium (ISDRS 2005). (6 2006). 973 - 978.

2005

  • Jin,N; Chung,S,Y; Heyns,R,M; Berger,P,R; Yu,R,H; Thompson,P,E; Rommel,S,L "Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes." JOURNAL: "MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING." in 2nd International SiGe Technology and Device Meeting (ISTDM). (2 2005). 411 - 416.

2004

  • Xu,Y,F; Berger,P,R; Wilson,J,N; Bunz,U,HF "Light sensitive polymer thin film transistors based on BAS-PPE." in Symposium on Flexible Electronics-Materials and Device Technology held at the 2004 MRS Spring Meeting. WARRENDALE, (1 2004). 391 - 395.
  • Sudirgo,S; Nandgaonkar,R,P; Curanovic,B; Hebding,J,L; Saxer,R,L; Islam,S,S; Hirschman,K,D; Rommel,S,L; Kurinec,S,K; Thompson,P,E; Jin,N; Berger,P,R "Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation." JOURNAL: "SOLID-STATE ELECTRONICS." in International Semiconductor Device Research Symposium (ISDRS 03). (10 2004). 1907 - 1910.

2003

  • Xu,Y,F; Berger,P; Cho,J; Timmons,R,B "Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics." in Symposium on Electronics on Unconventional Substrates-Electrotextiles and Giant-Area Flexible Circuits held at the 2002 MRS Fall Meeting. WARRENDALE, (1 2003). 195 - 200.
  • Chung,S,Y; Jin,N; Yu,R,H; Berger,P,R; Thompson,P,E; Lake,R; Rommel,S,L; Kurinec,S,K "Monolithic vertical integration of Si/SiGe HBT and Si-based resonant interband tunneling diode demonstrating latching operation and adjustable peak-to-valley current ratios." JOURNAL: "2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST." in IEEE International Electron Devices Meeting. NEW YORK, (1 2003). 296 - 299.

2002

  • Jin,N; Rice,A,T; Berger,P,R; Thompson,P,E; Chi,P,H; Simons,D,S "SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes." JOURNAL: "IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS." in IEEE Lester Eastman Conference on High Performance Devices. NEW YORK, (1 2002). 265 - 269.

2001

  • Kempisty,J,J; Hirschman,K,D; Kurinec,S,K; Jin,N; Chung,S,Y; Berger,P,R; Thompson,P,E "Integration of silicon-based tunnel diodes with CMOS: An RIT-OSU-NRL-NSF effort." JOURNAL: "FOURTEENTH BIENNIAL UNIVERSITY/GOVERNMENT/INDUSTRY MICROELECTRONICS SYMPOSIUM, PROCEEDINGS." in 14th Biennial University/Government/Industry Microelectronics Symposium. NEW YORK, (1 2001). 74 - 77.
  • Berger,P,R "Metal-semiconductor-metal photodetectors." JOURNAL: "TESTING RELIABILITY AND APPLICATIONS OF OPTOELECTRONIC DEVICES." in Conference on Testing, Reliability, and Applications of Optoelectronic Devices. BELLINGHAM, (1 2001). 198 - 207.

2000

  • Thompson,P,E; Hobart,K,D; Twigg,M,E; Rommel,S,L; Jin,N; Berger,P,R; Lake,R; Seabaugh,A,C; Chi,P "Epitaxial Si-based tunnel diodes." JOURNAL: "THIN SOLID FILMS." in Spring Meeting of the European-Materials-Research-Society. (12 2000). 145 - 150.

1998

  • Wright,N; Khan,A,T; Berger,P,R; Guarin,F,J; Iyer,S,S "Photoluminescence of SiSnC alloys grown on (100) Si substrates." in Materials-Research-Society Symposium on Epitaxy and Applications of Si-Based Heterostructures. WARRENDALE, (1 1998). 327 - 332.

1997

  • Khan,A,ST; Berger,P,R; Guarin,F,J; Iyer,S,S "Near band edge photoluminescence from pseudomorphic tensially strained Si0.985C0.015 alloy." JOURNAL: "THIN SOLID FILMS." in European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices. (2 1997). 122 - 124.

1996

  • Vaccaro,K; Spaziani,S,M; Dauplaise,H,M; Berger,P,R; Davis,A; TSACOYEANES,C,W; Martin,E,A; Lorenzo,J,P "Inverted, substrate-removed MSM and schottky diode optical detectors." JOURNAL: "1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS." in 8th International Conference on Indium Phosphide and Related Materials. NEW YORK, (1 1996). 226 - 229.

1995

  • Kolodzey,J; Berger,P,R; Orner,B,A; Hits,D; Chen,F; Khan,A; Shao,X; Waite,M,M; Shah,S,I; Swann,C,P; Unruh,K,M "Optical and electronic properties of SiGeC alloys grown on Si substrate." JOURNAL: "JOURNAL OF CRYSTAL GROWTH." in 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference. (12 1995). 386 - 391.