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Aaron Arehart

  • Research Assistant Professor, Electrical & Computer Engr.
  • 205 Dreese Laboratories
    2015 Neil Ave
    Columbus, OH 43210
  • 614-285-5323

About

Education

PhD, The Ohio State University, 2009

Areas of interest

Characterization and identification of electrically-active defects in semiconductors. Recently, this has led to development of new techniques to characterize traps in gallium nitride-based high electron mobility transistors (HEMTs) to identify defects responsible for degradation and reliability problems in these devices. Beyond nitrides, his other research interests include characterization of defects in solar materials, nanowires, and 2D materials using conventional techniques and novel nanometer-scale techniques.

Office

282 Caldwell Laboratory

Journal Articles

2017

  • Krishnamoorthy, S, Xia, Z, Joishi, C, Zhang, Y, McGlone, J, Johnson, J, Brenner, M, Arehart, AR, Hwang J, Lodha, S, Rajan, S, 2017, "Modulation-doped β−(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor." Applied Physics Letters 111, 023502 -

2013

  • Zhang,Z; Arehart,A,R; Cinkilic,E; Chen,J; Zhang,E,X; Fleetwood,D,M; Schrimpf,R,D; McSkimming,B; Speck,J,S; Ringel,S,A, 2013, "Impact of proton irradiation on deep level states in n-GaN." APPLIED PHYSICS LETTERS 103, no. 4, 042102 -

2012

  • Zhang,Z; Hurni,C,A; Arehart,A,R; Yang,J; Myers,R,C; Speck,J,S; Ringel,S,A, 2012, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy." APPLIED PHYSICS LETTERS 100, no. 5, 052114 -

2011

  • Arehart,A,R; Allerman,A,A; Ringel,S,A, 2011, "Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes." JOURNAL OF APPLIED PHYSICS 109, no. 11, 114506 -

2010

  • Arehart,A,R; Homan,T; Wong,M,H; Poblenz,C; Speck,J,S; Ringel,S,A, 2010, "Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy." APPLIED PHYSICS LETTERS 96, no. 24, 242112 -
  • Arehart,A,R; Poblenz,C; Speck,J,S; Ringel,S,A, 2010, "Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy." JOURNAL OF APPLIED PHYSICS 107, no. 5, 054518 -

2009

  • Yang,Chieh-Kai; Roblin,Patrick; Malonis,Andrew; Arehart,Aaron; Ringel,Steven; Poblenz,Christiane; Pei,Yi; Speck,James; Mishra,Umesh, 2009, "Characterization of Traps in AlGaN/GaN HEMTs with a Combined Large Signal Network Analyzer/Deep Level Optical Spectrometer System." 2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM 1-3, 1209 - 1212.

2008

  • Lin,Y; Arehart,A,R; Carlin,A,M; Ringel,S,A, 2008, "Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis." APPLIED PHYSICS LETTERS 93, no. 6, 062109 -
  • Arehart,A,R; Corrion,A; Poblenz,C; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A, 2008, "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films." PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 5, no. 6, 1750 - 1752.
  • Arehart,A,R; Corrion,A; Poblenz,C; Speck,J,S; Mishra,U,K; Ringel,S,A, 2008, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy." APPLIED PHYSICS LETTERS 93, no. 11, 112101 -

2007

  • Lin,Y; Carlin,J,A; Arehart,A,R; Carlin,A,M; Ringel,S,A, 2007, "High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy." APPLIED PHYSICS LETTERS 90, no. 1, 012115 -

2006

  • Arehart,A,R; Moran,B; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A, 2006, "Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics." JOURNAL OF APPLIED PHYSICS 100, no. 2, 023709 -

2005

  • Armstrong,A; Arehart,A,R; Green,D; Mishra,U,K; Speck,J,S; Ringel,S,A, 2005, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon." JOURNAL OF APPLIED PHYSICS 98, no. 5, 053704 -
  • Armstrong,A; Arehart,A,R; Green,D; Mishra,U,K; Speck,J,S; Ringel,S,A, 2005, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon." JOURNAL OF APPLIED PHYSICS 98, no. 5, 053704 -
  • Armstrong,A; Arehart,A; Green,D; Speck,J,S; Mishra,U,K; Ringel,S,A, 2005, "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si." PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 2, no. 7, 2411 - 2414.
  • Armstrong,A; Arehart,A,R; Ringel,S,A, 2005, "A method to determine deep level profiles in highly compensated, wide band gap semiconductors." JOURNAL OF APPLIED PHYSICS 97, no. 8, 083529 -

2004

  • Armstrong,A; Arehart,A,R; Moran,B; DenBaars,S,P; Mishra,U,K; Speck,J,S; Ringel,S,A, 2004, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition." APPLIED PHYSICS LETTERS 84, no. 3, 374 - 376.

2002

  • Hierro,A; Arehart,A,R; Heying,B; Hansen,M; Mishra,U,K; DenBaars,S,P; Speck,J,S; Ringel,S,A, 2002, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy." APPLIED PHYSICS LETTERS 80, no. 5, 805 - 807.
  • Hierro,A; Arehart,A,R; Heying,B; Hansen,M; Mishra,U,K; DenBaars,S,P; Speck,J,S; Ringel,S,A, 2002, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy." APPLIED PHYSICS LETTERS 80, no. 5, 805 - 807.

2001

  • Kaplar,R,J; Arehart,A,R; Ringel,S,A; Allerman,A,A; Sieg,R,M; Kurtz,S,R, 2001, "Deep levels and their impact on generation current in Sn-doped InGaAsN." JOURNAL OF APPLIED PHYSICS 90, no. 7, 3405 - 3408.
  • Hierro,A; Arehart,A,R; Heying,B; Hansen,M; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A, 2001, "Capture kinetics of electron traps in MBE-grown n-GaN." PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 228, no. 1, 309 - 313.