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Aaron Arehart

  • Research Assistant Professor, Electrical & Computer Engr.
  • 205 Dreese Laboratories
    2015 Neil Ave
    Columbus, OH 43210
  • 614-285-5323

About

Education

PhD, The Ohio State University, 2009

Areas of interest

Characterization and identification of electrically-active defects in semiconductors. Recently, this has led to development of new techniques to characterize traps in gallium nitride-based high electron mobility transistors (HEMTs) to identify defects responsible for degradation and reliability problems in these devices. Beyond nitrides, his other research interests include characterization of defects in solar materials, nanowires, and 2D materials using conventional techniques and novel nanometer-scale techniques.

Office

282 Caldwell Laboratory

Honors

  • 20160501

    Student Poster Award (Student: K. Galiano).

  • 20160301

    Lumley Research Award.

  • 20150701

    Outstanding Student Paper Award (Student: Jin Chen).

  • 20150701

    Best Student Paper Award (Student: Z. Zhang).

  • 19990901

    Two-Year Distinguished University Fellow.

Journal Articles

2017

  • Krishnamoorthy, S, Xia, Z, Joishi, C, Zhang, Y, McGlone, J, Johnson, J, Brenner, M, Arehart, AR, Hwang J, Lodha, S, Rajan, S, 2017, "Modulation-doped β−(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor." Applied Physics Letters 111, 023502 - 023502.
  • Farzana, E.; Zhang, Z.; Paul, P.K.; Arehart, A.R. et al., 2017, "Influence of metal choice on (010) β-Ga2O3 Schottky diode properties." Applied Physics Letters 110, no. 20,
  • Jackson, CM, Arehart, AR, Grassmana, TJ, McSkimming, B, Speck, JS, Ringel SA, 2017, "Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces." ECS Journal of Surface Science and Technology 6, no. 8, P489-P494 - P489-P494.
  • Karki, S.; Paul, P.K.; Rajan, G.; Ashrafee, T. et al., 2017, "In situ and ex situ investigations of KF postdeposition treatment effects on CIGS solar cells." IEEE Journal of Photovoltaics 7, no. 2, 665-669 - 665-669.
  • Lee, C.H.; Krishnamoorthy, S.; Paul, P.K.; O'Hara, D.J. et al., 2017, "Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy." Applied Physics Letters 111, no. 20,

2016

  • Nguyen, X.S.; Hou, H.W.; De Mierry, P.; Vennegues, P. et al., 2016, "Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy." PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 253, no. 11, 2225-2229 - 2225-2229.
  • Arehart, A.R.; Sasikumar, A.; Via, G.D.; Poling, B. et al., 2016, "Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN." Microelectronics Reliability 56, 45-48 - 45-48.
  • Sasikumar, A.; Arehart, A.R.; Cardwell, D.W.; Jackson, C.M. et al., 2016, "Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs." Microelectronics Reliability 56, 37-44 - 37-44.
  • Liu, X.; Jackson, C.M.; Wu, F.; Mazumder, B. et al., 2016, "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition." Journal of Applied Physics 119, no. 1,
  • Nguyen, X.S.; Goh, X.L.; Zhang, L.; Zhang, Z. et al., 2016, "Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate." Japanese Journal of Applied Physics 55, no. 6,
  • Chen, J.; Puzyrev, Y.S.; Zhang, E.X.; Fleetwood, D.M. et al., 2016, "High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs." IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 16, no. 3, 282-289 - 282-289.
  • Zhang, Z.; Farzana, E.; Arehart, A.R.; Ringel, S.A., 2016, "Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy." Applied Physics Letters 108, no. 5,
  • Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E.C.H. et al., 2016, "Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures." Journal of Applied Physics 119, no. 16,

2015

  • Zhang, Z.; Farzana, E.; Sun, W.Y.; Chen, J. et al., 2015, "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN." JOURNAL OF APPLIED PHYSICS 118, no. 15,
  • Chen, J.; Puzyrev, Y.S.; Jiang, R.; Zhang, E.X. et al., 2015, "Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs." IEEE TRANSACTIONS ON NUCLEAR SCIENCE 62, no. 6, 2423-2430 - 2423-2430.
  • Sasikumar, A.; Arehart, A.R.; Via, G.D.; Winningham, B. et al., 2015, "Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps." MICROELECTRONICS RELIABILITY 55, no. 11, 2258-2262 - 2258-2262.
  • Zhang, Z.; Arehart, A.R.; Kyle, E.C.H.; Chen, J. et al., 2015, "Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy." Applied Physics Letters 106, no. 2,
  • Lee, E.W.; Lee, C.H.; Paul, P.K.; Ma, L. et al., 2015, "Layer-transferred MoS2/GaN PN diodes." APPLIED PHYSICS LETTERS 107, no. 10,
  • J. Chen, Y. S. Puzyrev, R. Jiang, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, A. R. Arehart, S. A. Ringel, P. Saunier, and C. Lee, 2015, "Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs." IEEE Transactions on Nuclear Science 62, 2423-2430 - 2423-2430.
  • Zhang,Z; Farzana,E; Sun,W,Y; Chen,J; Zhang,E,X; Fleetwood,D,M; Schrimpf,R,D; McSkimming,B; Kyle,E,CH; Speck,J,S; Arehart,A,R; Ringel,S,A, 2015, "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN." JOURNAL OF APPLIED PHYSICS 118, no. 15, 155701 - 155701.
  • Paul, P.K.; Cardwell, D.W.; Jackson, C.M.; Galiano, K. et al., 2015, "Direct nm-Scale Spatial Mapping of Traps in CIGS." IEEE JOURNAL OF PHOTOVOLTAICS 5, no. 5, 1482-1486 - 1482-1486.
  • Nguyen, X.S.; Lin, K.; Fitzgerald, E.A.; Chua, S.J., 2015, "Correlation of a generation-recombination center with a deep level trap in GaN." Applied Physics Letters 106, no. 10,
  • A. Sasikumar, A. R. Arehart, G. D. Via, B. Winningham, B. Poling, E. Heller, and S. A. Ringel, 2015, "Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps." Microelec. Reliability 55, 2258 - 2258.

2014

  • Zhang, Z.; Jackson, C.M.; Arehart, A.R.; Mcskimming, B. et al., 2014, "Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy." JOURNAL OF ELECTRONIC MATERIALS 43, no. 4, 828-832 - 828-832.
  • Lee, E.W.; Ma, L.; Nath, D.N.; Lee, C.H. et al., 2014, "Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions." APPLIED PHYSICS LETTERS 105, no. 20,
  • Ma, L.; Nath, D.N.; Lee, E.W.; Lee, C.H. et al., 2014, "Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm(2) V-1 s(-1)." APPLIED PHYSICS LETTERS 105, no. 7,

2013

  • Arehart, A.R.; Sasikumar, A.; Rajan, S.; Via, G.D. et al., 2013, "Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors." SOLID-STATE ELECTRONICS 80, 19-22 - 19-22.
  • Jackson, C.M.; Arehart, A.R.; Cinkilic, E.; McSkimming, B. et al., 2013, "Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies." Journal of Applied Physics 113, no. 20,
  • Sasikumar, A.; Arehart, A.R.; Martin-Horcajo, S.; Romero, M.F. et al., 2013, "Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy." Applied Physics Letters 103, no. 3,
  • Zhang, Z.; Arehart, A.R.; Cinkilic, E.; Chen, J. et al., 2013, "Impact of proton irradiation on deep level states in n-GaN." Applied Physics Letters 103, no. 4,
  • Cardwell, D.W.; Sasikumar, A.; Arehart, A.R.; Kaun, S.W. et al., 2013, "Spatially-resolved spectroscopic measurements of E-c-0.57 eV traps in AlGaN/GaN high electron mobility transistors." APPLIED PHYSICS LETTERS 102, no. 19,
  • Long, R.D.; Jackson, C.M.; Yang, J.; Hazeghi, A. et al., 2013, "Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen." Applied Physics Letters 103, no. 20,

2012

  • Zhang, Z.; Hurni, C.A.; Arehart, A.R.; Speck, J.S. et al., 2012, "Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy." Applied Physics Letters 101, no. 15,
  • Zhang, Z.; Hurni, C.A.; Arehart, A.R.; Yang, J. et al., 2012, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy." APPLIED PHYSICS LETTERS 100, no. 5,
  • Gur,Emre; Tabares,G; Arehart,A; Chauveau,J,M; Hierro,A; Ringel,S,A, 2012, "Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy." JOURNAL OF APPLIED PHYSICS 112, no. 12, 123709 - 123709.
  • Zhang,Z; Hurni,C,A; Arehart,A,R; Yang,J; Myers,R,C; Speck,J,S; Ringel,S,A, 2012, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy." APPLIED PHYSICS LETTERS 100, no. 5, 052114 - 052114.
  • Sasikumar,A; Arehart,A; Kolluri,S; Wong,M,H; Keller,S; DenBaars,S,P; Speck,J,S; Mishra,U,K; Ringel,S,A, 2012, "Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs." IEEE ELECTRON DEVICE LETTERS 33, no. 5, 658-660 - 658-660.
  • Gur,Emre; Tabares,G; Arehart,A; Chauveau,J,M; Hierro,A; Ringel,S,A, 2012, "Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy." JOURNAL OF APPLIED PHYSICS 112, no. 12, 123709 - 123709.
  • Cardwell, D.W.; Arehart, A.R.; Poblenz, C.; Pei, Y. et al., 2012, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor." APPLIED PHYSICS LETTERS 100, no. 19,

2011

  • Arehart, A.R.; Allerman, A.A.; Ringel, S.A., 2011, "Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes." Journal of Applied Physics 109, no. 11,

2010

  • Arehart, A.R.; Homan, T.; Wong, M.H.; Poblenz, C. et al., 2010, "Impact of N- and Ga-face polarity on the incorporation of deep levels in n -type GaN grown by molecular beam epitaxy." Applied Physics Letters 96, no. 24,
  • Arehart, A.R.; Poblenz, C.; Speck, J.S.; Ringel, S.A., 2010, "Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy." Journal of Applied Physics 107, no. 5,

2009

  • Yang, C-K.; Roblin, P.; Malonis, A.; Arehart, A. et al., 2009, "Characterization of Traps in AlGaN/GaN HEMTs with a Combined Large Signal Network Analyzer/Deep Level Optical Spectrometer System." 2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 1209-+ - 1209-+.

2008

  • Arehart, A.R.; Corrion, A.; Poblenz, C.; Speck, J.S. et al., 2008, "Deep level optical and thermal spectroscopy of traps in n -GaN grown by ammonia molecular beam epitaxy." Applied Physics Letters 93, no. 11,
  • Lin, Y.; Arehart, A.R.; Carlin, A.M.; Ringel, S.A., 2008, "Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis." Applied Physics Letters 93, no. 6,

2007

  • Lin, Y.; Carlin, J.A.; Arehart, A.R.; Carlin, A.M. et al., 2007, "High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy." Applied Physics Letters 90, no. 1,

2006

  • Arehart, A.R.; Moran, B.; Speck, J.S.; Mishra, U.K. et al., 2006, "Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics." JOURNAL OF APPLIED PHYSICS 100, no. 2,

2005

  • Armstrong,A; Arehart,A,R; Green,D; Mishra,U,K; Speck,J,S; Ringel,S,A, 2005, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon." JOURNAL OF APPLIED PHYSICS 98, no. 5, 053704 - 053704.
  • Armstrong, A.; Arehart, A.R.; Green, D.; Mishra, U.K. et al., 2005, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon." JOURNAL OF APPLIED PHYSICS 98, no. 5,
  • Armstrong, A.; Arehart, A.R.; Ringel, S.A., 2005, "A method to determine deep level profiles in highly compensated, wide band gap semiconductors." JOURNAL OF APPLIED PHYSICS 97, no. 8,
  • Armstrong,A; Arehart,A,R; Ringel,S,A, 2005, "A method to determine deep level profiles in highly compensated, wide band gap semiconductors." JOURNAL OF APPLIED PHYSICS 97, no. 8, 083529 - 083529.

2004

  • Armstrong, A.; Arehart, A.R.; Moran, B.; DenBaars, S.P. et al., 2004, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition." APPLIED PHYSICS LETTERS 84, no. 3, 374-376 - 374-376.

2002

  • Hierro, A.; Arehart, A.R.; Heying, B.; Hansen, M. et al., 2002, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy." Applied Physics Letters 80, no. 5, 805-807 - 805-807.

2001

  • Kaplar, R.J.; Arehart, A.R.; Ringel, S.A.; Allerman, A.A. et al., 2001, "Deep levels and their impact on generation current in Sn-doped InGaAsN." Journal of Applied Physics 90, no. 7, 3405-3408 - 3405-3408.
  • Hierro, A.; Arehart, A.R.; Heying, B.; Hansen, M. et al., 2001, "Capture kinetics of electron traps in MBE-grown n-GaN." Physica Status Solidi (B) Basic Research 228, no. 1, 309-313 - 309-313.

Papers in Proceedings

2017

  • Paul, PK, Bailey, Zapalac, JG, Arehart AR "Fast C-V method to mitigate effects of deep levels in CIGS doping profiles." in Photovoltaics Specialists Conference. (11 2017).
  • Paul, PK, Jarmar, T, Stolt, L, Rockett, A, Arehart, AR "Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells." in Photovoltaics Specialists Conference. (11 2017).
  • Sun, W.; Ringel, S.A.; Arehart, A.R. "EC-0.90 eV trap-induced threshold voltage instability in GaN/Si MISHEMTs." (1 2017).

2016

  • Chmielewski, D.J.; Galiano, K.; Paul, P.; Cardwell, D. et al. "Comparative study of 2.05 eV AlGaInP and metamorphic GaInP materials and solar cells grown by MBE and MOCVD." (11 2016).
  • Paul, P.K.; Aryal, K.; Marsillac, S.; Ringel, S.A. et al. "Impact of the Ga/In ratio on defects in Cu(In, Ga)Se2." (11 2016).
  • Paul, P.K.; Aryal, K.; Marsillac, S.; Grassman, T.J. et al. "Identifying the source of reduced performance in 1-stage-grown Cu(In, Ga)Se2 solar cells." (11 2016).
  • Sun, W.; Lee, C.; Saunier, P.; Ringel, S.A. et al. "Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing." (9 2016).

2015

  • Cardwell, D.W.; Vaughn, N.; Paul, P.; Ratcliff, C. et al. "Investigations of metamorphic (Al)GaInP for III-V multijunction photovoltaics." (12 2015).
  • Sasikumar, A.; Zhang, Z.; Kumar, P.; Zhang, E.X. et al. "Proton irradiation-induced traps causing V<inf>T</inf> instabilities and RF degradation in GaN HEMTs." (1 2015).
  • A. Sasikumar, Z. Zhang, P. Kumar, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, P. Saunier, C. Lee, S. A. Ringel, and A. R. Arehart "Comparison of Irradiation and Electrical Stressors on AlGaN/GaN HEMT Reliability." in Government Microcircuit Applications and Critical Technology Conference. (3 2015).
  • D. W. Cardwell, N. Vaughn, P. Paul, C. Ratcliff, D. Chmielewski, S. Carnevale, A. R. Arehart, T. J. Grassman, and S. A. Ringel "Investigations of metamorphic (Al)GaInP for III-V multijunction photovoltaics." in 42nd IEEE Photovoltaics Specialists Conference. (10 2015).
  • A. R. Arehart, W. Sun, A. Sasikumar and S. A. Ringel "Ec-2.0eV trap related GaN/Si MISHEMTs dynamic Ron degradation." in CS ManTech. (4 2015).
  • Paul, P.K.; Cardwell, D.W.; Jackson, C.M.; Galiano, K. et al. "Direct nm-scale spatial mapping of traps in CIGS." (12 2015).

2014

  • Nath, D.N.; Ma, L.; Lee, C.H.; Lee, E. et al. "Electron transport in large-area epitaxial MoS2." (1 2014).
  • J. S. Speck, Z. Zhang, A. R. Arehart, E. Cinkilic, J. Chen, E. X. Zhang, Y. S. Puzyrev, C. X. Zhang, M. W. McCurdy, S. T. Pantelides, B. McSkimming, S. W. Kaun, E. C. H. Kyle, D. M. Fleetwood, R. D. Schrimpf, S. A. Ringel "Proton Irradiation in Bulk GaN Layers and Nitride-based HEMT Devices." in Government Microcircuit Applications and Critical Technology Conference. (3 2014).
  • Sasikumar, A.; Cardwell, D.W.; Arehart, A.R.; Lu, J. et al. "Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs." (1 2014).
  • Sasikumar, A.; Arehart, A.R.; Kaun, S.W.; Chen, J. et al. "Defects in GaN based transistors." (1 2014).

2012

  • Sasikumar, A.; Arehart, A.; Ringel, S.A.; Kaun, S. et al. "Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs." (9 2012).

2011

  • Arehart, A.R.; Malonis, A.C.; Poblenz, C.; Pei, Y. et al. "Next generation defect characterization in nitride HEMTs." (7 2011).

2010

  • Arehart, A.R.; Sasikumar, A.; Via, G.D.; Winningham, B. et al. "Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs." (12 2010).
  • Arehart, A.R.; Brenner, M.R.; Zhang, Z.; Swaminathan, K. et al. "Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells." (12 2010).

2009

  • Suh, I.; Roblin, P.; Ko, Y.; Yang, C.K. et al. "Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source." (12 2009).
  • Yang,Chieh-Kai; Roblin,Patrick; Malonis,Andrew; Arehart,Aaron; Ringel,Steven; Poblenz,Christiane; Pei,Yi; Speck,James; Mishra,Umesh "Characterization of Traps in AlGaN/GaN HEMTs with a Combined Large Signal Network Analyzer/Deep Level Optical Spectrometer System." in IEEE/MTT-S International Microwave Symposium. (1 2009).

2008

  • Arehart, A.R.; Corrion, A.; Poblenz, C.; Speck, J.S. et al. "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films." (12 2008).

2005

  • Armstrong, A.; Arehart, A.; Green, D.; Speck, J.S. et al. "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si." (11 2005).
  • Armstrong, A.; Green, D.; Arehart, A.R.; Mishra, U.K. et al. "Carbon-related deep states in compensated n-type and semi-insulating GaN:C and their influence on yellow luminescence." (8 2005).

2003

  • Armstrong, A.; Arehart, A.R.; Moran, B.; DenBaars, S.P. et al. "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition." (1 2003).
  • Arehart, A.R.; Poblenz, C.; Heying, B.; Speck, J.S. et al. "Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN." (12 2003).
  • Armstrong, A.; Arehart, A.R.; Ringel, S.A.; Moran, B. et al. "Identification of carbon-related bandgap states in GaN grown by MOCVD." (12 2003).
  • Ringel, S.A.; Armstrong, A.; Arehart, A.; Moran, B. et al. "Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy." (1 2003).