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Aaron Arehart

  • Research Assistant Professor, Electrical & Computer Engr.
  • 205 Dreese Laboratories
    2015 Neil Ave
    Columbus, OH 43210
  • 614-285-5323

About

Education

PhD, The Ohio State University, 2009

Areas of interest

Characterization and identification of electrically-active defects in semiconductors. Recently, this has led to development of new techniques to characterize traps in gallium nitride-based high electron mobility transistors (HEMTs) to identify defects responsible for degradation and reliability problems in these devices. Beyond nitrides, his other research interests include characterization of defects in solar materials, nanowires, and 2D materials using conventional techniques and novel nanometer-scale techniques.

Office

282 Caldwell Laboratory

Journal Articles

2014

  • Zhang,Zeng; Jackson,Christine,M; Arehart,Aaron,R; McSkimming,Brian; Speck,James,S; Ringel,Steven,A, 2014, "Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy." JOURNAL OF ELECTRONIC MATERIALS 43, no. 4, 828 - 832.
  • Ma,Lu; Nath,Digbijoy,N; Lee,Edwin,W; Lee,Choong,Hee; Yu,Mingzhe; Arehart,Aaron; Rajan,Siddharth; Wu,Yiying, 2014, "Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm(2) V-1 s(-1)." APPLIED PHYSICS LETTERS 105, no. 7, 072105 -
  • Lee,Edwin,W; Ma,Lu; Nath,Digbijoy,N; Lee,Choong,Hee; Arehart,Aaron; Wu,Yiying; Rajan,Siddharth, 2014, "Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions." APPLIED PHYSICS LETTERS 105, no. 20, 203504 -

2013

  • Arehart,A,R; Sasikumar,A; Rajan,S; Via,G,D; Poling,B; Winningham,B; Heller,E,R; Brown,D; Pei,Y; RECHT,F; Mishra,U,K; Ringel,S,A, 2013, "Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors." SOLID-STATE ELECTRONICS 80, 19 - 22.
  • Cardwell,D,W; Sasikumar,A; Arehart,A,R; Kaun,S,W; Lu,J; Keller,S; Speck,J,S; Mishra,U,K; Ringel,S,A; Pelz,J,P, 2013, "Spatially-resolved spectroscopic measurements of E-c-0.57 eV traps in AlGaN/GaN high electron mobility transistors." APPLIED PHYSICS LETTERS 102, no. 19, 193509 -
  • Zhang,Z; Arehart,A,R; Cinkilic,E; Chen,J; Zhang,E,X; Fleetwood,D,M; Schrimpf,R,D; McSkimming,B; Speck,J,S; Ringel,S,A, 2013, "Impact of proton irradiation on deep level states in n-GaN." APPLIED PHYSICS LETTERS 103, no. 4, 042102 -
  • Jackson,Christine,M; Arehart,Aaron,R; Cinkilic,Emre; McSkimming,Brian; Speck,James,S; Ringel,Steven,A, 2013, "Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies." JOURNAL OF APPLIED PHYSICS 113, no. 20, 204505 -
  • Sasikumar,A; Arehart,A,R; Martin-Horcajo,S; Romero,M,F; Pei,Y; Brown,D; RECHT,F; di Forte-Poisson,M,A; Calle,F; Tadjer,M,J; Keller,S; DenBaars,S,P; Mishra,U,K; Ringel,S,A, 2013, "Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy." APPLIED PHYSICS LETTERS 103, no. 3, 033509 -
  • Long,R,D; Jackson,C,M; Yang,J; Hazeghi,A; Hitzman,C; Majety,S; Arehart,A,R; Nishi,Y; Ma,T,P; Ringel,S,A; McIntyre,P,C, 2013, "Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen." APPLIED PHYSICS LETTERS 103, no. 20, 201607 -

2012

  • Cardwell,D,W; Arehart,A,R; Poblenz,C; Pei,Y; Speck,J,S; Mishra,U,K; Ringel,S,A; Pelz,J,P, 2012, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor." APPLIED PHYSICS LETTERS 100, no. 19, 193507 -
  • Zhang,Z; Hurni,C,A; Arehart,A,R; Speck,J,S; Ringel,S,A, 2012, "Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy." APPLIED PHYSICS LETTERS 101, no. 15, 152104 -
  • Gur,Emre; Tabares,G; Arehart,A; Chauveau,J,M; Hierro,A; Ringel,S,A, 2012, "Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy." JOURNAL OF APPLIED PHYSICS 112, no. 12, 123709 -
  • Sasikumar,A; Arehart,A; Kolluri,S; Wong,M,H; Keller,S; DenBaars,S,P; Speck,J,S; Mishra,U,K; Ringel,S,A, 2012, "Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs." IEEE ELECTRON DEVICE LETTERS 33, no. 5, 658 - 660.
  • Zhang,Z; Hurni,C,A; Arehart,A,R; Yang,J; Myers,R,C; Speck,J,S; Ringel,S,A, 2012, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy." APPLIED PHYSICS LETTERS 100, no. 5, 052114 -

2011

  • Arehart,A,R; Allerman,A,A; Ringel,S,A, 2011, "Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes." JOURNAL OF APPLIED PHYSICS 109, no. 11, 114506 -

2010

  • Arehart,A,R; Homan,T; Wong,M,H; Poblenz,C; Speck,J,S; Ringel,S,A, 2010, "Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy." APPLIED PHYSICS LETTERS 96, no. 24, 242112 -
  • Arehart,A,R; Poblenz,C; Speck,J,S; Ringel,S,A, 2010, "Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy." JOURNAL OF APPLIED PHYSICS 107, no. 5, 054518 -

2009

  • Yang,Chieh-Kai; Roblin,Patrick; Malonis,Andrew; Arehart,Aaron; Ringel,Steven; Poblenz,Christiane; Pei,Yi; Speck,James; Mishra,Umesh, 2009, "Characterization of Traps in AlGaN/GaN HEMTs with a Combined Large Signal Network Analyzer/Deep Level Optical Spectrometer System." 2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM 1-3, 1209 - 1212.

2008

  • Arehart,A,R; Corrion,A; Poblenz,C; Speck,J,S; Mishra,U,K; Ringel,S,A, 2008, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy." APPLIED PHYSICS LETTERS 93, no. 11, 112101 -
  • Lin,Y; Arehart,A,R; Carlin,A,M; Ringel,S,A, 2008, "Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis." APPLIED PHYSICS LETTERS 93, no. 6, 062109 -

2007

  • Lin,Y; Carlin,J,A; Arehart,A,R; Carlin,A,M; Ringel,S,A, 2007, "High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy." APPLIED PHYSICS LETTERS 90, no. 1, 012115 -

2006

  • Arehart,A,R; Moran,B; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A, 2006, "Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics." JOURNAL OF APPLIED PHYSICS 100, no. 2, 023709 -

2005

  • Armstrong,A; Arehart,A,R; Ringel,S,A, 2005, "A method to determine deep level profiles in highly compensated, wide band gap semiconductors." JOURNAL OF APPLIED PHYSICS 97, no. 8, 083529 -
  • Armstrong,A; Arehart,A,R; Green,D; Mishra,U,K; Speck,J,S; Ringel,S,A, 2005, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon." JOURNAL OF APPLIED PHYSICS 98, no. 5, 053704 -

2004

  • Armstrong,A; Arehart,A,R; Moran,B; DenBaars,S,P; Mishra,U,K; Speck,J,S; Ringel,S,A, 2004, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition." APPLIED PHYSICS LETTERS 84, no. 3, 374 - 376.

2002

  • Hierro,A; Arehart,A,R; Heying,B; Hansen,M; Mishra,U,K; DenBaars,S,P; Speck,J,S; Ringel,S,A, 2002, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy." APPLIED PHYSICS LETTERS 80, no. 5, 805 - 807.

2001

  • Kaplar,R,J; Arehart,A,R; Ringel,S,A; Allerman,A,A; Sieg,R,M; Kurtz,S,R, 2001, "Deep levels and their impact on generation current in Sn-doped InGaAsN." JOURNAL OF APPLIED PHYSICS 90, no. 7, 3405 - 3408.

Papers in Proceedings

2014

  • Sasikumar,A; Arehart,A,R; Kaun,S,W; Chen,J; Zhang,E,X; Fleetwood,D,M; Schrimpf,R,D; Speck,J,S; Ringel,S,A "Defects in GaN based transistors." in Conference on Gallium Nitride Materials and Devices IX. BELLINGHAM, (1 2014). 89861C -
  • Nath,Digbijoy,N; Ma,Lu; Lee,Chong,Hee; Lee,Edwin; Arehart,Aaron; Wu,Yiying; Raja,Siddharth "Electron transport in large-area epitaxial MoS2." in 72nd Annual Device Research Conference (DRC). NEW YORK, (1 2014). 89 - 90.
  • Sasikumar,A; Cardwell,D,W; Arehart,A,R; Lu,J; Kaun,S,W; Keller,S; Mishra,U,K; Speck,J,S; Pelz,J,P; Ringel,S,A "Toward a physical understanding of the reliability-limiting E-C-0.57 eV trap in GaN HEMTs." in International Reliability Physics Symposium (IRPS). NEW YORK, (1 2014). 2C.1.1 - 2C.1.6.

2012

  • Sasikumar,A; Arehart,A; Ringel,S,A; Kaun,S; Wong,M,H; Mishra,U,K; Speck,J,S "Direct Correlation Between Specific Trap Formation and Electric Stress-induced Degradation in MBE-grown AlGaN/GaN HEMTs." in IEEE International Reliability Physics Symposium (IRPS). NEW YORK, (1 2012). 2C.3.1 - 2C.3.6.

2011

  • Arehart,A,R; Malonis,A,C; Poblenz,C; Pei,Y; Speck,J,S; Mishra,U,K; Ringel,S,A "Next generation defect characterization in nitride HEMTs." in International Workshop on Nitride Semiconductors (IWN)/Fall Meeting of the European-Materials-Research-Society (E-MRS)/Symposium N/Symposium H. WEINHEIM, (1 2011). 2242 - 2244.

2010

  • Arehart,A,R; Brenner,M,R; Zhang,Z; Swaminathan,K; Ringel,S,A "TRAPS IN AlGaInP MATERIALS AND DEVICES LATTICE MATCHED TO GaAs FOR MULTI-JUNCTION SOLAR CELLS." in 35th IEEE Photovoltaic Specialists Conference. NEW YORK, (1 2010). 1999 - 2001.
  • Arehart,A,R; Sasikumar,A; Via,G,D; Winningham,B; Poling,B; Heller,E; Ringel,S,A "Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs." in International Electron Devices Meeting (IEDM). NEW YORK, (1 2010). 20.1.1 - 20.1.4.

2009

  • Yang,Chieh-Kai; Roblin,Patrick; Malonis,Andrew; Arehart,Aaron; Ringel,Steven; Poblenz,Christiane; Pei,Yi; Speck,James; Mishra,Umesh "Characterization of Traps in AlGaN/GaN HEMTs with a Combined Large Signal Network Analyzer/Deep Level Optical Spectrometer System." in IEEE/MTT-S International Microwave Symposium. NEW YORK, (1 2009). 1209 - 1212.

2008

  • Arehart,A,R; Corrion,A; Poblenz,C; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films." in 7th International Conference on Nitride Semiconductors (ICNS-7). WEINHEIM, (1 2008). 1750 - 1752.

2005

  • Armstrong,A; Arehart,A; Green,D; Speck,J,S; Mishra,U,K; Ringel,S,A "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si." in International Workshop on Nitrides Semiconductors (IWN 2004). WEINHEIM, (1 2005). 2411 - 2414.
  • Armstrong,A; Green,D; Arehart,A,R; Mishra,U,K; Speck,J,S; Ringel,S,A "Carbon-related deep states in compensated n-type and semi-insulating GaN : C and their influence on yellow luminescence." in Symposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting. WARRENDALE, (1 2005). 311 - 316.

2004

  • Armstrong,A; Arehart,A,R; Moran,B; DenBaars,S,P; Mishra,U,K; Speck,J,S; Ringel,S,A "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition." in 30th International Symposium on Compound Semiconductors. NEW YORK, (1 2004). 42 - 48.

2003

  • Armstrong,A; Arehart,A,R; Ringel,S,A; Moran,B; DenBaars,S,P; Mishra,U,K; Speck,J,S "Identification of carbon-related bandgap states in GaN grown by MOCVD." in Symposium on GaN and Related Alloys held at the MRS Fall Meeting. WARRENDALE, (1 2003). 509 - 514.
  • Arehart,A,R; Poblenz,C; Heying,B; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A "Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN." in Symposium on GaN and Related Alloys held at the MRS Fall Meeting. WARRENDALE, (1 2003). 735 - 740.

2001

  • Hierro,A; Arehart,A,R; Heying,B; Hansen,M; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A "Capture kinetics of electron traps in MBE-grown n-GaN." JOURNAL: "PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS." in 4th International Conference on Nitride Semiconductors (ICNS-4). (11 2001). 309 - 313.