People
Shantanu Saha
- Postdoc
- #351 Caldwell Lab
2024 Neil Ave
Columbus, OH 43210
saha.124@osu.edu
Shantanu was born and brought up in Calcutta. In 2017, he completed his Ph.D from Indian Institute of Technology Bombay where he was involved in growth and characterization of ZnO/ ZnMgO with an intention of getting p-type conductivity. Prior to that, Dr. Saha received his M.Tech and B.Tech in Radiophysics and Electronics and Information Technology in 2012 and 2010 respectively from Institute of Radiophysics and Electronics, University of Calcutta. He has also completed B.Sc in Electronics(Hons) from the same university in 2007. At present, he is focused on growth of large area, defect free nitride materials (h-BN) in ultrahigh vacuum chamber for realization of Single photon emitter, a key aspect for quantum photonics.
Syed Mohammad Najib Hasan
- Graduate Research Associate, Electrical & Computer Engr.
- Graduate Research Associate
- 2015 Neil Ave
Columbus, OH 43210-1210 - #350 Caldwell Lab
I am from Dhaka, Bangladesh. I joined the PhD program in Electrical and Computer Engineering at The Ohio State University on August 2018. I received my Bachelor’s degree in Materials & Metallurgical Engineering from the Bangladesh University of Engineering and Technology (BUET) in 2012. For my thesis I worked with natural fiber reinforced polymer composites. I completed my Master’s degree in Materials Science & Engineering in 2015 from Gwangju Institute of Science and Technology (GIST), South Korea. My research focus was Graphene based 3D device integration through stacking and possible chemical reactions surrounding it. Furthermore I have worked 2D materials like MoS2, WS2 characteristics, fabrication processes, NEMS etc. Currently I am working on III-nitride semiconductor diode lasers.
Weicheng You
- Graduate Research Associate, Electrical & Computer Engr.
- 2024 Neil Ave
Columbus, OH 43210-1210
you.249@osu.edu
I am from Sichuan, China. I received the Bachelor of Engineering degree in Opto-Electronics Information Science and Engineering from Sichuan University, Sichuan, China. I completed the Ms. Program in the Department of Electrical and Computer Engineering at The Ohio State University in May, 2019. I have been currently working toward my PhD degree. My research interests lie in III-V materials and devices, laser technology, photonic integrated circuit and molecular beam epitaxial growth.
Riazul Arefin
- Graduate Research Associate, Electrical & Computer Engr.
- Graduate Research Associate
- 2015 Neil Ave
Columbus, OH 43210-1210
arefin.2@osu.edu
Riazul Arefin is a graduate research associate in the Optics and Photonics research laboratory (OPREL) and pursuing his Ph.D. in Electrical and Computer Engineering department of OSU. He did his bachelor in Electrical and Electronic Engineering from Islamic University of Technology, Gazipur, Bangladesh. Then he did his masters in Molecular Nano and Bio-photonics program (MONABIPHOT) with Erasmus Mundus Scholarship. During his MS, he studied in École Normale Supérieure Paris-Saclay and the Complutense University of Madrid. He was a summer intern in International Iberian Nanotechnology Laboratory (INL), Portugal where he worked on fabrication and characterization of nano-LEDs based on perovskites and quantum dots and he did his master thesis in Centre for Nanoscience and Nanotechnology (C2N), France where he worked on tensile-strained Germanium laser. His research interest includes silicon photonics, solid-state devices, and optical communication.
Arnob Ghosh
- Graduate Research Associate, Electrical & Computer Engr.
- Graduate Research Associate
- 2015 Neil Ave
Columbus, OH 43210-1210
ghosh.230@osu.edu
Arnob received the B.Sc. degree with Honours in Electrical and Electronic Engineering (EEE) from Bangladesh University of Engineering and Technology (BUET) in October 2018. He then joined Daffodil International University, Bangladesh as a Lecturer in the department of EEE. His research interest lies in III-V materials, semiconductor diode lasers and quantum photonics. Currently, he is a member of the Optics and Photonics Research Laboratory (OPREL) at the Ohio State University and pursuing his PhD degree since summer 2021.
Fatih Uzgur
- Visiting Fellow, Electrical & Computer Engr.
- 2015 Neil Ave
#351 Caldwell lab
OH 43210
uzgur.1@osu.edu
Fatih Uzgur is currently working as a visiting scholar in the Electrical and Computer Engineering Department at The Ohio State University (OSU). He holds a double major B.Sc. degree in Physics and Mathematics from Ataturk University, Erzurum, Turkey. He received his Ph.D. degree from the Micro and Nanotechnology Department, Middle East Technical University (METU), Ankara, Turkey. His doctoral research, which was conducted in Quantum Devices and Nanophotonics Research Laboratory at METU, was about InGaAs and HgCdTe infrared detectors. He is experienced in numerical modeling on semiconductor devices, MBE growth of both III-V and II-VI materials, photolithography, RIE and metallization, and other cleanroom equipment.
Md Saiful Islam Sumon
- Graduate Fellow, Graduate School Administration
- 230 N Oval Mall
Columbus, OH 43210-1335 - 230 N Oval Mall
Columbus, OH 43210-1335 - 2015 Neil Ave.
#349 Caldwell lab
Columbus, OH 43210
Md Saiful Islam Sumon has completed his Bachelor's and Master's in Electrical and Electronic Engineering from Islamic University of Technology, Bangladesh. He is a faculty member (on leave) of the same University. In 2021, he has joined the OPREL group as a graduate fellow for his PhD in Electrical and Computer Engineering at The Ohio State University. His research interest includes quantum photonics and III-V materials.
Research
Nanoscale semiconductor materials and photonic devices are expected to play an important role in addressing ongoing and future challenges in the field of communication and sensing. Ultra high-speed, short and long-range communication links; portable and power-efficient computing devices; ultra-fast interconnects; and high-performance optical sensors in sensing applications are critically depending on the success of next-generation emerging materials and the resulting photonic devices. Therefore, we are fully committed to perform cutting-edge and collaborative experimental research on nanoscale materials and photonic devices. The areas of research focus primarily include advanced materials, novel semiconductor lasers, nanophotonic devices, integrated photonics, nanofabrication, new device concepts and electronic/photonic integration. Group IV, III-V and their alloys as semiconductor materials will mainly be used to design and fabricate these devices.
Schematic at the left illustrating our research work which are dedicated to interdisciplinary research relating to III-V compound semiconductor materials and devices that bridges engineering, optics, applied physics and nanoscience or nanotechnology.
Overview of the optical spectrum, showing the region of interest that will be addressed
by our research, marked by red rectangle.
GaSa-based High-Power Lasers
GaN
The primary research objective of our work is to advance intellectual understanding of non-classical light sources through the development of novel photonic platforms that require growth of one-dimensional III-nitride nanowire (NW) structures. We will explore a new and unique technique for the growth of nitrogen (N)-polar GaN NWs with InGaN quantum dots (QDs) deterministically placed inside using a bottom-up approach via plasma-assisted molecular beam epitaxy (PAMBE). The long-term objective of the proposed research is to achieve bright and ultra-spectrally pure single-photon sources (SPSs) that meet aggressive performance specifications, such as high count rate and near-zero auto-correlation factors for high-fidelity entanglement.
h-BN
2D semiconductors have opened up new possibilities due to their potentials as active device materials for future optoelectronics. Among several 2D materials, hexagonal boron nitride (h-BN), a 2D material, is emerging to host ultra bright room-temperature quantum emitters. Our primary research goal is to grow single-crystalline, large-area and defect-free h-BN thin films on highly oriented pyrolitic graphite (HOPG) substrates. Growing high-quality and large-area h-BN thin films through a scalable and controllable method is essential for the demonstration of single-photon emitters (SPEs).
User Facilities
The Nanotech West Lab of Ohio State is the largest nanotechnology user facility in the state of Ohio. Serving both internal (Ohio State) and external users, Nanotech West supports more than 100 research and development projects per year including use many external users, predominantly startup companies in the Ohio region. Nanotech West consists of a 6,000 square foot class 100 cleanroom facility, a 4,000 square foot Biohybrid Laboratory.
Nanotech West is staffed by 7 full-time engineers, 2 part-time support engineers, 1 full-time administrator, and additional Associate Staff and engineering and office student interns. Most of the engineering Core Staff have extensive experience in semiconductor or closely related industries.
The NanoSystems Laboratory's goal is to provide academic and industrial users with access to advanced material characterization and fabrication tools for research and development applications. NSL is located on the Columbus Campus of The Ohio State University in the Physics Research Building.
Research capabilities available at NSL include focused ion beam/scanning electron microscopy, e-beam lithography, nanomanipulation, EDS X-ray microanalysis, X-ray diffractometry, SQUID magnetometry, atomic force/magnetic force microscopy, low temperature magnetotransport measurements and Langmuir-Blodgett trough monolayer deposition.
Bruker AXS Dimension Icon Atomic/Magnetic Force Microscope with ScanAsyst
This tool of Nanosystems Laboratory (NSL) is located in PRB 1159. This system has vibration isolation with closed scanning range 90 µm × 90 µm. It is a sound proof enclosure for low noise operation with Z sensor noise level of 35 pm RMS typical in imaging bandwidth of 625 Hz. Sample positioning is easy and it is scanned with 5 megapixel digital camera with digital zoom and motorized focus. The modes of operations are enlisted below:
- Atomic Force Microscopy (AFM) mode
- Magnetic Force Microscopy (MFM) mode
- Peak Force Quantitative Nanomechanical Property Mapping (PF-QNM) mode
- Scanned Capacitance Microscopy (SCM) mode
- Spatially resolved electrical characterization mode
Focused Ion Beam/Scanning Electron Microscope (FIB/SEM)
Our SEM is a tool of NSL facilities and located in PRB 0177C. It is a sophisticated platform for sample preparation, imaging and analysis. We use Kleindeik Nanomanipulators for in situ electrical measurements and nanomanipulation. The images are analysed with innovative Elstar electron column for high-resolution as high as 0.9 nm at 15 kV at optimal working distance. The high-performance Sidewinder ion column is used for fast, precise cross sectioning of the sample. This versatile system has some additional capabilities like
- Pt deposition
- X-ray EDS microanalysis with 2D material mapping
- e-beam lithography with Nabity NPGS software
- Two Kleindiek MM3A-EM nanomanipulator for in situ nanomanipulation and two-probe electrical measurements
Bruker D8 Discover High-Resolution Triple Axis X-Ray Diffractometer (XRD)
Our XRD facility is also a NSL tool and available at PRB 0177. We have third generation Göbel mirrors providing the highest X-ray flux density which is essential for all thin film applications. This system is easy to handle and ensures failsafe operation. The presence of motorized absorber allows fully automatic operation without user intervention. Cu Kα1 is used for getting the x-ray. Leptos and Topaz softwares are used for analyzing the data. This high performance instrument can be used for the following applications:
- High resolution X-ray Diffraction
- Texture and Stress Analysis
- X-ray reflectometry
- Grazing Incidence Diffraction (GID)
- Powder Diffraction
Information and Photos from NSL
Near Ambient Pressure-X-ray Photoelectron Spectroscopy
The Surface Analysis Lab (SAL) facility within Center of Chemistry and Biochemistry (CBEC) Engineering houses a newly installed SPECS near ambient pressure (NAP) Kratos Axis Ultra XPS system utilizing an in-situ cell capable of surface characterization
in the presence of gases of interest up to 20 mbar and a temperature range of 200-800 K. The instrument is equipped with both monochromatic (Al) and dual (Mg and Al) X-ray sources in addition to a helium UV source. Ar ion gun is also available for sputtering and depth profiling purposes. The smallest spot size that the system is capable of is 50 μm × 50 μm. https://u.osu.edu/napxps/
The system features the following capabilities:
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Near ambient pressure cell capable of XPS measurements from UHV up to 20 mbar of N2
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3 Mass flow controllers and a separate leak valve (for vapors) in a premixing line prior to introduction to the cell
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Al anode X-ray source with a variable spot size between 250 µm to 1 mm
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1-D DLD SPECS PHOIBOS NAP analyzer capable of 1 meV resolution
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Sample cooling and heating covering the range of 200 K to 825 K
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IQE 12/38 Argon Sputtering source for depth profiling and sputtering
Available Gases:
O2, CO, CO2, H2, H2O, Alcohol, Ar, N2
*Other gases would be considered upon discussion with the lab manager.
Limitations:
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Sample size should not exceed 1.5 mm × 1.5 mm × 1 mm (L × W × H) in dimensions.
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There is no charge neutralizer available therefore non-conductive samples will significantly charge.
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Powder samples will only be secured via carbon tape. Samples utilizing carbon tape will be limited to room temperature measurements and non-corrosive gases.
XPS vs EDS
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Depth analysis in EDS around 1000 to 2000 nm which is 100 to 200 times deeper than XPS.
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EDS works better for heavier elements.
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XPS analysis works well on insulating materials, as well as on conducting or semiconducting materials. This avoids conductive coating interference problems that may accompany EDS analysis.
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Because of the charged excitation electron beam, rather than neutral x-rays used in XPS analysis, EDS analysis on some insulating materials is challenging and may be of much reduced usefulness.
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Lithium, beryllium, and boron may be detected and can be quantitatively analyzed with XPS. The XPS accuracy of analysis for carbon, nitrogen, and oxygen is very high, while it is abysmal for EDS.
More details can be found here: http://www.andersonmaterials.com/elemental-composition-analysis.html
Renishaw Raman IR Microprobe
This instrument is a combination of an inVia confocal Raman microscope for Raman spectroscopy and a Smiths Detection IlluminatIR II for FTIR. The for Raman spectroscopy available are 458, 514, 633 and 785 nm. With the instrument configuration, it is able to record each spectrum individually or in combination to get a Raman spectra and FTIR on the exact same spot on the sample. Samples can be film, powder, or liquid. There is also a temperature cell available to use with films or powder that has a temperature range from -173 to 600 °C.
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Laser: 514 nm/633 nm/785 nm as pump wavelengths
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Grating: 1800 l/mm
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Exposure time: 10s/20s/30s (User's choice)
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Accumulations: 5/10 (User's choice)
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Laser power: 100%
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Range 100-1600 cm-1
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Objective: 50×
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Beam spot size: 1 mm
Coming soon: Polarized Raman Spectroscopy with the ability to change the polarization of the pump and/or probe for the 514, 633 ad 785 nm Raman pump wavelengths.
Olympus FV1000- Filter and Spectral Confocal System
This tool comes under Campus Microscopy & Imaging Facility (CMIF). We have two confocal systems:
i) Olympus FV 1000 Filter confocal system is equipped with four lasers, four fluorescence detectors and several high N.A. and short working distance objectives. This system offers routine confocal microscopy of fixed tissue sections and cultured cells. The laser wavelengths of this system are
- HeNe1 (543 nm) ,
- HeNe2 (633 nm),
- Argon/2 laser (458, 477, 488, 514 nm),
- 405nm Diode laser
The images can be obtained either in OIB or OIF Olympus format. In addition, 12 bit gray scale 24 bit color JPEG/BMP/TIFF/AVI image formats are also available. Resolution formats of pixels range from 64 × 64 up to 4096 × 4096.
ii) Olympus FV 1000 Spectral confocal system is equipped with 2 Spectral and 2 Filter-based fluorescence PMT detectors and one transmitted, DIC detector. This system has also same laser wavelengths and quality of the images as mentioned above.
Information and Photo from CMIF
The Center for Electron Microscopy and Analysis (CEMAS) is a centralized, coordinated imaging facility where traditional boundaries between disciplines are eliminated.
With one of the largest concentrations of electron and ion beam analytical microscopy instruments in any North American institution, CEMAS brings together multidisciplinary expertise to drive synergy, amplify characterization capabilities, and challenge what is possible in analytical electron microscopy.
- Scanning Electron Microscopy (SEM)
- Transmission Electron Microscopy (TEM)
- Focused Ion Beam (FIB) Microscopy
- Cryo-electron Microscopy (CRYO-EM)
- X-ray Diffraction (XRD)
- Micro Computed Tomography (MICROCT)
Two-Deimensional Material MBE
Our 2D MBE is MBE5 which is a GEN930 chamber with the goal of growing high-quality 2D materials including GaSe, GaTe, VSe, MnSe and MoWSe2. This chamber includes in situ RHEED and Raman spectroscopy. The 2D materials can be grown using
Se as one of the constituents. Te could be used as well. This reactor could also be upgraded for the investigation of other exotic “topological insulator” or “quantum-compatible” materials.
Below are the effusion cells and deposition capabilities for the tool.
i) Se cracker
ii) Ge
iii) Ga
iv) Mn
v) Bi
vi) Fe
vii) Te (Untested and needs extensive calibration)
viii) Sn
In the past, we also used Mo and tried to evaporate tungsten (W). Depositing W turned out to be very challenging.
Vaccume Cluster #2
Vacuum cluster #2 contains a Veeco GEN 930 system along with a Riber M7 MBE chamber. This vacuum system uses Veeco transfer and manipulator technology for both chambers.
i) MBE3 - Plasma assisted MBE (PAMBE) for growth of III-V compounds based on AlGaInN materials.
ii) N2 plasma source: system has both a Veeco and Riber plasma source.
The Oxford Plasmalab System 100 180 ICP-RIE
The Oxford Plasmalab System 100 180 ICP is a 100 mm reactive ion etching tool designed for a variety of etches. It’s an ICP based etcher designed to etch pieces mounted to a 100 mm wafer. With a variety of gases and a cryo chuck it is currently used for etching III-V and a variety of other materials. The system used primarily for the etching of III-V with CH4/H2/Ar/N2/O2/Cl2 gases. The system is diffusion pumped with a loadlock.
Hardware Details
i) Gases: Ar/ CH4/ Cl2/ H2/ O2/ N2
ii) Pressure: 1-100 mTorr
iii) Mechanical Clamping Chuck:
100 mm Wafer
10-50 Torr Backside He Cooling
50°C Standard Temp (-150°C to 150°C Range)
iv) Chamber: 60°C Heated Aluminum Walls
v) RF: Working Frequency 50/60 Hz
vi) Substrate Requirements: 100 mm (4") wafers
Group facilities
Backend process
Indent and Cleaving Solutions
A LatticeAx 420 includes a monocular microscope with 4 µm optical resolution, color CCD camera cleaves a wide range of materials and sample sizes. It has a highest cleaving accuracy of 10 µm. The Indent position can be controlled with 5 µm step size.
Optical Spectrum Analyzer
Our Optical Spectrum Analyzer (OSA) "OSA205C" covers the wavelength range from 1 µm to 5.6 µm. The tool acquires the spectrum via Fourier transform, using a scanning Michelson interferometer in a push/pull configuration. This system has two operating modes. One is the spectrometer mode (7.5 GHz Resolution (0.25 cm-1). The other one is wavelength meter mode (0.1 ppm Resolution (Only for <10 GHz Linewidth Sources)). These compact benchtop instruments suit a wide variety of applications, such as analyzing the spectrum of a telecom signal, resolving the Fabry-Perot modes of a gain chip, and identifying gas absorption lines.
Micro-Photoluminescence Spectroscopy
The OPREL Lab’s capabilities in photoluminescence spectroscopy include multiple laser sources with varying excitation wavelengths; a detection range extending from 0.4 to 0.9 µm with a resolution of 0.25 nm and room-temperature measurement. The contactless, nondestructive PL method uses a customized HR4000 spectrometer to analyze the electronic structure of materials. The samples get excited by a collimated laser source at a wavelength above their bandgap. The excited carriers move to the material conduction bands due to the applied photons. Once the excitation ends, the carriers will recombine in the valence band and emit photon energy (Photoluminescence). The characteristic of this emitted photoluminescence is a symbol of the material characteristics and gives information regarding the composition, bandgap, impurity and defect levels, and structure of the materials.
Fourier-transform infrared spectrometer
System's PL setup details can be found here.
A Nicolet iS-50R FT_IR spectrometer with KBr beam splitter and liquid nitrogen cooled MCT detector covers the wavelength range from SWIR (1 µm) to LWIR (15 µm).
1. PL measurement
- pump laser: 980 nm (QPhotonics, model QFLD-980-150S)
:1550 nm https://www.thorlabs.com/thorproduct.cfm?partnumber=FPL1009S
- Detector: MCT detector in FTIR (1.3 - 25 µm, liquid nitrogen cooling required)
2. Microwave photoconductive decay measurement
- Pulsed laser : 1.535 µm (< 5 µJ pulse energy, < 5 ns pulse width and 2.5 kHz repetition rate)
- Microwave reflectance :
The output of the system is nominally 20 mW at 94 GHz. Microwaves emitted by the source are directed to the sample through a triple-junction circulator/horn/lens assembly. Upon reflection from the sample, microwaves are collected through the same path and routed again through the circular to a zero-bias Schottky diode. The detected signals are amplified by FEMTO amplifiers before being captured by the Picoscope digitizer.
3. Temperature dependent measurement from 12 - 300 K
4. Mapping/imaging capability of 6 inch wafers
5. There are optics and objective lens to focus laser light beam on samples.
6. The beam spot size is around 300 µm, i.e. maximum spatial resolution achievable during mapping.
8D system’s time resolution: we collect data w/ 2 ns time resolution, and this appears to be the minimum time resolution based on the manual
8D system’s spatial movement resolution: ≲ 1 µm
Lakeshore CRX-6.5k with Keysight B1500A Parameter Analyzer
Photo by NTW Lakeshore CRX Low Temperature Probe Station is connected with Keysight B1500A Parameter Analyzer (PRB07 at NTW). This Probe station enables users to conduct temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements while accommodating temperature range from 9 K to 300 K.
Optical related measurements such as I-V and C-V under laser illumination can also be undertaken. The in-housing multimode fiber is placed in the probe station, and four different lasers, 660 nm, 890 nm, 1300 nm, and 1550 nm, are available.
The Easy Expert Software is compatible with the Parameter Analyzer, which helps users customize measurement interface and environment and use it readily.
Gallery
News from the Lab
OPREL Group lunch
Posted: December 3, 2019
From the left, Shantanu, Hyemin, Riazul, Najib, Shamsul, Weicheng, and Yok Jye
OPREL group memebers enjoyed the group lunch at Amul on 2nd December.
Sujit and Jacob could not attend this event.
Prof. Chennupati Jagadish visited OPREL on 25th October.
Posted: October 26, 2019
Prof. Chennupati Jagadish from Department of Electronic Materials Engineering in The Australian National University, Canberra, Australia visited OPREL on 25th October and gave a seminar entitled “Semiconductor Nanowires for Optoelectronics Applications”.
Professor Chennupati Jagadish, AC, FAA, FTSE, FTWAS, FNAI, FNA, FNAE, FASc, FAPAS, FEurASc
Research School of Physics
The Australian National University
Canberra, ACT 2601, Australia
Email: c.jagadish@ieee.org
Professor Jagadish is a Distinguished Professor and Head of Semiconductor Optoelectronics and Nanotechnology Group in the Research School of Physics and Engineering, Australian National University. He has served as Vice-President and Secretary Physical Sciences of the Australian Academy of Science during 2012-2016. He is currently serving as President of IEEE Photonics Society, President of Australian Materials Research Society. Prof. Jagadish is an Editor/Associate editor of 5 Journals, 3 book series and serves on editorial boards of 19 other journals. He has published more than 920 research papers (640 journal papers), holds 5 US patents, co-authored a book, co-edited 13 books and edited 12 conference proceedings and 17 special issues of Journals. He won the 2000 IEEE Millennium Medal and received Distinguished Lecturer awards from IEEE NTC, IEEE LEOS and IEEE EDS. He is a Fellow of the Australian Academy of Science, Australian Academy of Technological Sciences and Engineering, The World Academy of Sciences, US National Academy of Inventors, Indian National Science Academy, Indian National Academy of Engineering, IEEE, APS, MRS, OSA, AVS, ECS, SPIE, AAAS, FEMA, APAM, IoP (UK), IET (UK), IoN (UK) and the AIP. He received many awards including IEEE Pioneer Award in Nanotechnology, 2015 IEEE Photonics Society Engineering Achievement Award, 2016 OSA Nick Holonyak Jr Award, 2017 Welker Award, 2017 IUMRS Somiya Award, 2018 UNESCO medal for his contributions to the development of nanoscience and nanotechnologies and 2019 Lyle medal from Australian Academy of Science for his contributions to Physics. He has received Australia’s highest civilian honor, AC, Companion of the Order of Australia, as part of 2016 Australia day honors from the Governor General of Australia for his contributions to physics and engineering, in particular nanotechnology.
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Prof. Arafin will be serving as a Subcommittee Chair in "Photonic Devices" in OSA’s Advanced Photonics, IPR 2020
Posted: October 21, 2019
Prof. Arafin will be serving as a Subcommittee Chair in "Photonic Devices" in OSA’s Advanced Photonics, IPR 2020, Montreal, QC, Canada
Prof. Arafin will give an invited talk at the 43rd IEEE Electron Devices Society Activities on 7th Nov.
Posted: October 11, 2019
Prof. Arafin will give an invited talk on “Compound III-V Semiconductor based Classical and Non-Classical Light Emitters at Visible through Mid-Infrared” at the 43rd IEEE Electron Devices Society Activities in Western NY Conference, which is scheduled to take place at Rochester Institute of Technology on Thursday, November 7th.
Please go website and check the details:
IEEE EDSA Website
Conference schedules
Prof. Arafin will be serving as a Local Arrangement Chair for Device Research Conference, taking place in OSU
Posted: September 26, 2019
Prof. Arafin will be serving as a Local Arrangement Chair for 78th Device Research Conference (DRC), taking place in The Ohio State University, Columbus, OH on 21st - 24th, June, 2020.
Dr. Sarvagya Dwivedi will be visiting our group on 4th October.
Posted: September 21, 2019
Please welcome our visitor Dr. Sarvagya Dwivedi.
He will be visiting our group on 4th October.
He completed his PhD from Ghent University, Ghent, Belgium in 2016 and Masters degree in Electrical Engineering from Indian institute of Technology Bombay (IITB) in 2009 with specialization in Communication and signal processing.
He worked for COMSOL Multiphysics in its Bangalore office (India) where he was involved in designing and analyzing MEMS devices and coupled field problems from 2009 - 2011.
Please see the link below if you want to know more details about him.
Prof. Arafin will be serving as a Subcommittee Chair in Photonic Integration and Packaging in IEEE Photonics Conference 2020.
Posted: September 21, 2019
Prof. Arafin will be serving as a Subcommittee Chair in Photonic Integration and Packaging (PIP) in IEEE Photonics Conference 2020 (annual meeting) in Vancouver, BC, Canada on June 2020.
Prof. Arafin is serving in Technical Program Committee in “S&I3 Semiconductor Lasers” in OSA’s CLEO 2020.
Posted: August 9, 2019
Dr. Arafin is serving in Technical Program Committee in “S&I3 Semiconductor Lasers” in OSA’s CLEO 2020, San Jose, CA, USA.
Congratulations! We got awarded a 2019 Exploratory Materials Research Grant within MRSGP.
Posted: August 7, 2019
We have been awarded a 2019 Exploratory Materials Research Grant within The Ohio State University Materials Research Seed Grant Program (MRSGP) in the proposal entitled "Room-Temperature III-Nitride Based Single-Photon Emission".
Dr. Arafin and Weicheng will present at CERF on Aug.
Posted: July 22, 2019
Dr. Arafin and Weicheng will attend at CERF on Aug.
Weicheng will give 3 minutes talk in an oral session before the poster session.
Dr. Arafin will give the poster presentation.
Dr. Arafin will attend at IPC on Sep. 2019.
Posted: July 14, 2019
Dr. Arafin will attend at IPC(IEEE Photonics Society) in San Antonio, TX on Sep. 2019.
Au electroplating system was set up
Posted: July 12, 2019
We had been working on setting up Au electroplating in order to deposit the thick gold layer (4~5 um). Finally, we finished the setup and the final test. It works well. Thank you all for your efforts and contributions.
Weicheng wins ENGIE-Axium Scholarship for summer 2019
Posted: July 9, 2019
The award recognizes his commitment to working or studying in areas of energy or sustainability. Congratulations!
New OSA at photonics lab.
Posted: June 29, 2019
A few days ago, a new OSA (Optical Spectrum Analyzer) was finally arrived at Photonics lab. Now it is ready for working! We all are so excited to use this tool for the device characterization.
Najib presents at ICNS 2019 on July 2019
Posted: June 21, 2019
Najib will give an oral presentation on "Design of tunnel-injected sub-300 nm AlGaN-based lasers" at 13th International Conference on Nitride Semiconductors 2019 in Seattle/Bellevue, WA, USA on July 2019.
Dr. Arafin will present at RAPID on Aug. 2019
Posted: June 20, 2019
Dr. Arafin will present about “Design of high-power electrically-pumped VECSELs for the 3-4 μm wavelength range” at the RAPID (Research and Applications of Photonics in Defense) in Miramar beach, FL on August 2019.
Congratulations on Dr. Arafin's Promotion to the SPIE Senior Membership
Posted: June 20, 2019
Dr. Arafin's SPIE membership has been elevated to the rank of Senior Member on June 14, 2019.
Congratulations!
2019 OSU Materials Week
Posted: June 10, 2019
Najib presented a poster about "MBE-Grown III-Nitride Based Blue Laser Diodes on c-plane n-doped GaN Substrates." in 2019 OSU Materials Week hosted by the Institute for Materials Research (IMR)
