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Students advised by Dr. Marlin Thuraton

Master's Advisees | PhD Advisees

Master's Advisees:

 

Name, Graduation Year, Thesis Title (if applicable)

  • Ronald D. Baxter, 1963,  Ion-pairing between lithium and the residual acceptors in GaSb
  • Carl Otto Bozler, 1965, Epitaxial crystal growth of α - rhombohedral boron
  • Harold Kent Brown, 1977, Propagation of electromagnetic waves through silicon with an arbitrary concentration distribution
  • Richard Mason Campbell, 1956, Pinhole camera gun tester for investigation of electron beams
  • Kio-Min Chang, 1981
  • Yaw-Hwa Chen, 1982
  • Shih-Ou Chen, 1983
  • Paul Richard Fournier, 1969,  An analysis of a complementary IGFET shift register bit
  • James Linden George, 1964, Storage time measurements of gamma-ray radiation damage and annealing in silicon diodes
  • Glen Carl Gerhard, 1958, A high sensitivity Hall coefficient measuring apparatus
  • Gianfranco Gerosa, 1980, A large area pin diode microwave modulator
  • Dexter George Girton, 1962, The generation-photoconductivity method of measuring semiconductor carrier lifetime
  • Robert Lionel Hamson, 1958, A tunable retarding-field oscillator operating in the wavelength region from twelve to twenty centimeters
  • Joseph H. Havens, 1981
  • Peter F. Hille, 1964, Measurement of the anomalous skin resistance of high purity metals at 4.3⁰K
  • George Chia-Yin Hsieh, 1983
  • William R. III Huber, 1963, An autoradiographic technique for determining impurity distribution in silicon dioxide
  • Patrick Louis Hunter, 1964, Piezoresistance properties of boron
  • Stuart Pollard Jackson, 1960, High Field Effects in Indium Antimonide
  • James Gross Josenhans, 1958, A millimicrosecond pulse generator utilizing klystron bunching techniques
  • Ki Dong Kang, 1960, Studies of the masking of boron in fabricating silicon p-n junction devices
  • Raymond F. Kennedy, 1960, A study of harmonic frequency conversion
  • Chung K Kim, 1964, Photo-triggering of P-N-P-N switching diode
  • David Andrew La Rosa, 1982
  • Yung-Huei Lee, 1982
  • Jui-Chuan Liang, 1982
  • Theodore E. Luke, 1959, Preliminary investigation of parametric frequency conversion
  • Jose Maiz-Aguinaga, 1980, Optical bistability in bismuth substituted garnets
  • James R. Mathews, 1962, A practical method of creating predictable dislocation networks in diamond-lattice semiconductors
  • Rama Chintakindi Menon, 1956, Large signal theory of the retarding field oscillator
  • Wi Sik Min, 1981, Steady state excess carrier distribution in N-type INSB under illumination by light
  • Mark Edward Mosley, 1981
  • Everette C. Olson, 1962, A magnetic bias for the four layer diode
  • Gilbert M. Rodgers, 1963, An experiment investigation of the surface and interface impurity distribution in a silicon-silicon dioxide system
  • Babak Sabi, 1981
  • James D. Sipes, 1966, An equivalent circuit analysis of an integrated avalanche pulse generator
  • Joseph P. Sitarik, 1965, The VLS growth of single crystal boron
  • John M. Swartz, 1960, Radiation damage effects in conductivity modulated silicon diodes
  • Joseph Cho Chuan Tsai, 1958, An improved presentation of the distribution of gamma radiation intensity using a scintillation counter
  • Arthur Jerome Wager, Jr., 1960, An Investigation into the fabrication techniques of an Esaki diode
  • Pai-Lu Dennis Wang, 1983
  • Sivaram Prasad Yenigalla, 1981

PhD Advisees:

Name, Graduation Year, Dissertation Title

  • Bamdad Bastani, 1980, Development and characterization of a solid state detector array for a large scale gamma-ray imaging system
  • Frank Edward Battocletti, 1962, A two-terminal silicon pulse generator utilizing a floating P-N junction
  • Carl Otto Bozler, 1969, Preparation and characteristics of InAs films grown by coplanar chemical transport
  • Harold Kent Brown, 1980, The use of microwaves to characterize optically stimulated semiconductors
  • Richard Mason Campbell, 1966, Low-noise electron gun for television pickup tubes
  • Kio-Min Chang, 1985, Two-carrier charge trapping and dielectric breakdown in thin silicon nitride films
  • Timothy Lee Deeter, 1981, Fabrication and characterization of ohmic contacts made with gold on heavily tin doped, N-type surface layers in Gallium arsenide
  • Vir A. S. Dhaka, 1962, The effect of a magnetic field on the forward characteristics of long germanium junction diodes
  • Glen Carl Gerhard, 1963, On the current-voltage characteristics of PIN and PSN diodes at high injection levels
  • Gianfranco Gerosa, 1982, A light-controlled light modulator for the 10 micron region based on P-type silicon
  • John Wesley Gray, 1966, Analysis and measurement of the small-signal gain of a GaAs brewster angle light amplifier as a function of current
  • Robert Lionel Hamson, 1963, Mechanisms and effects of microplasma conduction at breakdown in silicon P-N junctions
  • Ki Dong Kang, 1962, The mechanisms for oxidation of silicon and diffusion of donor and acceptor impurities into the oxide for a silicon-silicon dioxide system
  • Dawon Kahng, 1959, Phosphorus diffusion into silicon through an oxide layer
  • Chung K. Kim, 1967, Investigation of intervalley scattering effect in the elasto-conductance of n-type silicon and germanium
  • Theodore E. Luke, 1973, The role of crystal conductivity in modifying the properties of ferroelectric bismuth titanate
  • Jose Maiz-Aguinaga, 1983, Fabrication and characterization of crystalline silicon on insulator by the tungsten strip heater method
  • Stuart N. Mapes, Jr., 1965, Comparison of Hall mobility in cadmium sulfide with drift mobility as measured by the method of ultrasonic amplification
  • Rama Chintakindi Menon, 1962, Structure and bonding in polymorphs of crystalline boron : a self-consistent field density-matrix formulation and symmetry reduction of the secular equation in the LCAO approximation for [alpha]-rhombohedral boron
  • Wi Sik Min, 1981, Photoelectromagnetic switching effects in indium antimonide
  • Tet Chong Pang, 1963, Application of the Shockley-Read recombination statistics to the study of the P⁺NN⁺ diode
  • Babak Sabi, 1984, Characterization of tungsten-silicide for gate level interconnections of MOS VLSI circuits (Metal, Oxide, Semiconductor)
  • David Arthur Sealer, 1965, Stimulated Raman scattering and related nonlinear optical effects
  • John M. Swartz, 1965, Analysis of the effect of fast neutron bombardment on the current-voltage characteristics of a conductivity-modulated p-i-n code
  • Joseph Cho Chuan Tsai, 1962, The simultaneous diffusion of donor and acceptor impurities into silicon
  • Marvin Hart White, 1969, Characterization of microwave transistors
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